System and Method of Chemical Mechanical Polishing

Abstract

A system controls a flow of a chemical mechanical polish (CMP) slurry into a chamber to form a slurry reservoir within the chamber. Once the slurry reservoir has been formed within the chamber, the system moves a polishing head to position and force a surface of a wafer that is attached to the polishing head into contact with a polishing pad attached to a platen within the chamber. A wafer/pad interface is formed at the surface of the wafer forced into contact with the polishing pad and the wafer/pad interface is disposed below an upper surface of the slurry reservoir. During CMP processing, the system controls one or more of a level, a force, and a rotation of the platen, a position, a force and a rotation of the polishing head to conduct the CMP processing of the surface of the wafer at the wafer/pad interface.

What is claimed is: 
     
         1 . A system comprising:
 a platen within a chamber;   a polishing head;   a first slurry input/output; and   a second slurry input/output, wherein both the first slurry input/output and the second slurry input/output are located on an opposite side of the platen than the polishing head.   
     
     
         2 . The system of  claim 1 , further comprising a level sensor located within the chamber. 
     
     
         3 . The system of  claim 2 , wherein the level sensor is located at least partially above a polishing pad located adjacent to the platen. 
     
     
         4 . The system of  claim 1 , further comprising a motor to physically move the platen from a first distance away from a bottom of the chamber to a second distance away from the bottom of the chamber. 
     
     
         5 . The system of  claim 1 , further comprising a slurry reservoir within the chamber, wherein the platen is immersed within the slurry reservoir. 
     
     
         6 . The system of  claim 1 , further comprising a restoration system connected to both the first slurry input/output and the second slurry input/output. 
     
     
         7 . A system, comprising:
 a chemical mechanical polishing chamber;   a first port and a second port both located at a first level within the chemical mechanical polishing chamber;   a platen located at a second level within the chemical mechanical polishing chamber; and   a polishing head located at a third level within the chemical mechanical polishing chamber, the second level being located between the first level and the third level.   
     
     
         8 . The system of  claim 7 , further comprising a polishing pad attached to the platen. 
     
     
         9 . The system of  claim 8 , further comprising a slurry reservoir located within the chemical mechanical polishing chamber, wherein each of the first port, the second port, and the polishing pad are immersed within the slurry reservoir. 
     
     
         10 . The system of  claim 9 , wherein the polishing pad is immersed to a distance of at least 3 mm and about 7 mm. 
     
     
         11 . The system of  claim 7 , further comprising a motor connected to the platen to move the platen relative to a bottom surface of the chemical mechanical polishing chamber. 
     
     
         12 . The system of  claim 7 , further comprising:
 a filter connected to the second port; and   a restoration system.   
     
     
         13 . The system of  claim 7 , further comprising a level sensor located within the chemical mechanical polishing chamber. 
     
     
         14 . The system of  claim 13 , wherein the level sensor is located at least partially above a polishing pad over the platen. 
     
     
         15 . A system, comprising:
 a chamber comprising a slurry intake;   a platen housed within the chamber; and   a polishing pad housed within the chamber, wherein an upper surface of the polishing pad is located above a bottom surface of the chamber and wherein a delivery orifice of the slurry intake is located below the upper surface of the polishing pad.   
     
     
         16 . The system of  claim 15 , further comprising a level sensor located within the chamber. 
     
     
         17 . The system of  claim 16 , wherein the level sensor is located at least partially above the polishing pad. 
     
     
         18 . The system of  claim 15 , further comprising a slurry reservoir located within the chamber, the slurry reservoir covering the polishing pad. 
     
     
         19 . The system of  claim 15 , further comprising a motor located to move the polishing pad in a first direction, the first direction being perpendicular to a rotational motion of the polishing pad. 
     
     
         20 . The system of  claim 15 , further comprising:
 a filter connected to an output of the chamber; and   a restoration system.