Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt comprising substrates

Abstract

A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ≥1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.

1 . A chemical mechanical polishing (CMP) composition suitable for chemical mechanical polishing of a substrate comprising (i) cobalt and (ii) TiN and/or TaN, the CMP composition comprising:
 (A) inorganic particles;   (B) an organic compound comprising an amino group and an acid group, the organic compound comprising n amino groups and at least n+1 acidic protons, n being an integer >1;   (C) an oxidizer in an amount of from 0.2 to 2.5 wt.-%, based on total CMP composition weight;   (D) an aqueous medium,   wherein the CMP composition (Q) has a pH of more than 6 and less than 9.   
     
     
         2 . The composition of  claim 1 , wherein the inorganic panicles (A) are colloidal inorganic particles. 
     
     
         3 . The composition of  claim 2 , wherein the colloidal inorganic particles are colloidal silica particles. 
     
     
         4 . The composition of  claim 1 , wherein the organic compound is a non-polymeric compound with a molecular weight below 600 g/mol. 
     
     
         5 . The composition of  claim 1 , wherein die acid group in the organic compound (B) comprises a carboxylic acid, sulfonic acid, and/or phosphonic acid. 
     
     
         6 . The composition of  claim 1 , wherein the organic compound (B) comprises an amino acid, substituted ethylenediamine, substituted diethylenetriamine, secondary amine and/or tertiary amine. 
     
     
         7 . The composition of  claim 1 , wherein a total amount of the at least one organic compound (B) is in a range of from 0.1 to 2 wt.-%, based on the total CMP composition weight. 
     
     
         8 . The composition of  claim 1 , further comprising:
 a corrosion inhibitor (E) in a total amount of from 0.001 to 0.1 wt.-%. based on the total CMP composition weight.   
     
     
         9 . The composition of  claim 1 , wherein the corrosion inhibitor (E) has a pka-value of below 8. 
     
     
         10 . The composition of  claim 1 , further comprising:
 a surfactant (F) in a total amount of from 0.001 to 0.05 wt.-%, based on the total CMP composition weight.   
     
     
         11 . The composition of  claim 1 , wherein the surfactant (F) is an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group. 
     
     
         12 . The composition of  claim 1 , wherein the oxidizer is hydrogen peroxide. 
     
     
         13 . A chemical mechanical polishing (CMP) composition, comprising, based on total CMP composition weight:
 (A) colloidal silica particles in a total amount of from 0.01 to 2 wt.-%;   (B) an organic compound (B) selected from the group consisting of glutamic acid, aspartic acid, ethylenediaminetetraacetic acid, diethylene triamine pentaacetic acid, cysteic acid, ammotris(methylenephosphonic acid), diethylenetriamine penta(methylene phosphonic acid), iminodiacetic acid, and ethylenediamine tetra(methyiene phosphonic acid) in a total amount of from 0.1 to 2 wt.-%;   (C) hydrogen peroxide in a total amount of from 0.2 to 1.8 wt.-%;   (D) an aqueous medium;   (E) a corrosion inhibitor (E) selected from the group consisting of imidazole, benzimidazole, 4-(dimethylamino) benzoic acid, terephthalic acid, isophthalic acid, 6,6′6″-(1,3,5-trizine-2,4,6-triyltriimino)trihexanoic acid, phenyltetrazole, N-lauroylsarcosine, 4-dodecylbenzene sulfonic acid, and phosphoric acid C6 -C10 alkyl ester in a total amount of from 0.002 wt.-% to 0.1 wt.-%;   (F) an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group (F) in a total amount of from 0.001 to 0.05 wt.-%;   wherein the CMP composition has a pH of more than 6 and less than 9.   
     
     
         14 . The composition of  claim 1 , configured for a process for manufacturing a semiconductor device comprising the chemical mechanical polishing of a substrate (S) used in the semiconductor industry,
 wherein the substrate (S) comprises   (i) cobalt; and   (ii) TiN and or TaN.   
     
     
         15 . The composition of  claim 1 , suitable to achieve a static etch rate (SER) of cobalt is below 70 Å/min. 
     
     
         16 . The composition of  claim 1 , suitable for a cobalt material removal rate (MRR) to be adjusted to a range of from 1000 to 4000 Å/min and the TiN material removal rate (MRR) be higher than 300 Å/min.