Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus

Abstract

A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a conductive film containing molybdenum and a metal element,   the metal element having a melting point lower than a melting point of molybdenum, the metal element forming a complete solid solution with molybdenum.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the metal element is at least one selected from the group consisting of titanium, vanadium, and niobium. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the metal element is contained in an amount of 5 atomic % or less with respect to a total amount of molybdenum and the metal element. 
     
     
         4 . The semiconductor device according to  claim 3 , wherein the metal element is contained in an amount of 1 atomic % or less with respect to a total amount of molybdenum and the metal element. 
     
     
         5 . The semiconductor device according to  claim 1 , comprising:
 a stacked body having a plurality of the conductive films alternately stacked with insulating films; and   a columnar part provided in the stacked body along a stacked direction of the stacked body,   wherein the columnar part has a semiconductor film, and an electric charge storage film disposed between the semiconductor film and the plurality of the conductive films.   
     
     
         6 . The semiconductor device according to  claim 5 , wherein the conductive films are arranged as one of a control gate or a control electrode. 
     
     
         7 . A method for manufacturing a semiconductor device, comprising:
 forming a conductive film by a chemical vapor deposition (CVD) method using (i) a solid raw material containing molybdenum, or (ii) a solid raw material containing a metal element, or (iii) both, the conductive film containing molybdenum and the metal element, the metal element having a melting point lower than the melting point of molybdenum, and the metal element forming a complete solid solution with molybdenum.   
     
     
         8 . The method for manufacturing the semiconductor device according to  claim 7 , comprising:
 forming a stacked body having a plurality of the conductive films alternately stacked with insulating films; and   forming a columnar part in a hole in the stacked body along a stacked direction of the stacked body, the columnar part having a semiconductor film and an electric charge storage film disposed between the semiconductor film and the plurality of the conductive films.   
     
     
         9 . The method for manufacturing the semiconductor device according to  claim 7 , wherein the formation of the conductive film includes:
 supplying a solid raw material of molybdenum or of the metal element to a raw material container;   placing a movable lid on the solid raw material in the raw material container, and then heating the solid raw material; and   forming the conductive film by a raw material gas generated in the raw material container by the heating.   
     
     
         10 . The method for manufacturing the semiconductor device according to  claim 7 , wherein the conductive film is an alloy of molybdenum and the metal element. 
     
     
         11 . The method for manufacturing the semiconductor device according to  claim 7 , wherein the metal element is at least one selected from the group consisting of titanium, vanadium, and niobium. 
     
     
         12 . The method for manufacturing the semiconductor device according to  claim 7 , wherein the CVD method alternately forms films of molybdenum and the metal element, and further comprising annealing the films of molybdenum and the metal element to form an alloy. 
     
     
         13 . The method for manufacturing the semiconductor device according to  claim 7 , wherein the CVD method comprises at least one of a metal organic (MO) CVD method, a plasma CVD method, or an atomic layer deposition (ALD) method. 
     
     
         14 . A semiconductor device manufacturing apparatus comprising:
 a raw material supply part including a raw material container arranged to contain a solid raw material, a heater arranged relative to the raw material container so as to heat the solid raw material, a lid movable on the solid raw material, and a load applying a load to the solid raw material via the lid; and   a film deposition chamber arranged to receive a vaporized component of the solid raw material from the raw material supply part and configured to form a film by the vaporized component.   
     
     
         15 . The semiconductor device manufacturing apparatus according to  claim 14 , wherein the raw material container is configured to contain one or both of a solid raw material of molybdenum or a solid raw material of a metal element as the solid raw material, the metal element having a melting point lower than the melting point of molybdenum and forming a complete solid solution with molybdenum. 
     
     
         16 . The semiconductor device manufacturing apparatus according to  claim 14 , wherein the raw material supply part includes a guide arranged to control movement of the lid, and the lid includes a through hole through which the guide is configured to be inserted. 
     
     
         17 . The semiconductor device manufacturing apparatus according to  claim 16 , wherein the guide comprises an elongated guide bar arranged to extend through the through hole. 
     
     
         18 . The semiconductor device manufacturing apparatus according to  claim 16 , wherein the lid comprises multiple lids.