Silicon compounds and methods for depositing films using same

Abstract

A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.

1 . A chemical vapor deposition method for producing a dielectric film, the method comprising:
 providing a substrate into a reaction chamber;   introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising a silicon compound having the following Formula I:   
       
         
           
           
               
               
           
         
       
       wherein X and Y are independently selected from the group consisting of OR 1 , OR 2 , and OC(O)R 3 ; R 1-3  are independently selected from the group consisting of a linear or branched C 1  to C 10  alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 3  to C 10  cyclic alkyl group, a C 3  to C 10  hetero-cyclic alkyl group, a C 5  to C 10  aryl group, and a C 3  to C 10  hetero-aryl group; and R 4  is a C 3  to C 5  alkyl di-radical which forms a four-membered, five-membered, or six-membered saturated cyclic ring with the Si atom, and optionally at least one oxygen source; and
 applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. 
 
     
     
         2 . The method of  claim 1  wherein the silicon precursor further comprises a hardening additive. 
     
     
         3 . The method of  claim 1  wherein the silicon compound comprises at least one selected from the group consisting of 1,1-dimethoxy-1-silacyclopentane, 1,1-diethoxy-1-silacyclopentane, 1,1-di-n-propyloxy-1-silacyclopentane, 1,1-di-iso-propyloxy-1-silacyclopentane, 1,1-dimethoxy-1-silacyclobutane, 1,1-diethoxy-1-silacyclobutane, 1,1-di-n-propyloxy-1-silacyclobutane, 1,1-di-iso-propyloxy-1-silacyclobutane, 1,1-dimethoxy-1-silacyclohexane, 1,1-di-iso-propyloxy-1-silacyclohexane, 1,1-di-n-propyloxy-1-silacyclohexane, 1-methoxy-1-acetoxy-1-silacyclopentane, 1,1-diacetoxy-1-silacyclopentane, 1-methoxy-1-acetoxy-1-silacyclobutane, 1,1-diacetoxy-1-silacyclobutane, 1-methoxy-1-acetoxy-1-silacyclohexane, 1,1-diacetoxy-1-silacyclohexane, 1-ethoxy-1-acetoxy-1-silacyclopentane, 1-ethoxy-1-acetoxy-1-silacyclobutane, and combinations thereof. 
     
     
         4 . The method of  claim 2  wherein the hardening additive comprises tetraethoxysilane. 
     
     
         5 . The method of  claim 2  wherein the hardening additive comprises tetramethoxysilane. 
     
     
         6 . The method of  claim 1  which is a plasma enhanced chemical vapor deposition method. 
     
     
         7 . The method of  claim 1  where the optionally at least one oxygen source is selected from the group consisting of O 2 , N 2 O, NO, NO 2 , CO 2 , water, H 2 O 2 , and ozone. 
     
     
         8 . The method of  claim 1  where the reaction chamber in the applying step comprises at least one gas selected from the group consisting of He, Ar, N 2 , Kr, Xe, NH 3 , H 2 , CO 2 , or CO. 
     
     
         9 . The method of  claim 1  further comprising a step of applying additional energy to the film. 
     
     
         10 . The method of  claim 9  wherein the additional energy is at least one selected from the group consisting of a thermal treatment, an ultraviolet (UV) treatment, an electron beam treatment, and a gamma radiation treatment. 
     
     
         11 . The method of  claim 10  wherein the UV treatment occurs during at least a portion of the thermal treatment. 
     
     
         12 . The method of  claim 1  wherein the silicon compound included in the gaseous reagents includes less than 100 ppm of any halide ion impurities. 
     
     
         13 . The method of  claim 1  wherein the silicon compound included in the gaseous reagents includes less than 5 ppm of any metal ion impurities. 
     
     
         14 . A chemical vapor deposition method for producing a porous dielectric film, comprising:
 providing a substrate into a reaction chamber;   introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising a silicon compound having the following Formula I:   
       
         
           
           
               
               
           
         
       
       wherein X and Y are independently selected from the group consisting of OR 1 , OR 2 , and OC(O)R 3 ; R 1-3  are independently selected from the group consisting of a linear or branched C 1  to C 10  alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 3  to C 10  cyclic alkyl group, a C 3  to C 10  hetero-cyclic alkyl group, a C 5  to C 10  aryl group, and a C 3  to C 10  hetero-aryl group; and R 4  is a C 3  to C 5  alkyl di-radical which forms a four-membered, five-membered, or six-membered saturated cyclic ring with the Si atom, and further optionally comprise at least one oxygen source; and
 applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. 
 
     
     
         15 . The method of  claim 14  wherein the optional oxygen source is at least one selected from the group consisting of O 2 , N 2 O, NO, NO 2 , CO 2 , water, H 2 O 2 , and ozone. 
     
     
         16 . The method of  claim 14  wherein the silicon compound comprises at least one selected from the group consisting of 1,1-dimethoxy-1-silacyclopentane, 1,1-diethoxy-1-silacyclopentane, 1,1-di-n-propyloxy-1-silacyclopentane, 1,1-di-iso-propyloxy-1-silacyclopentane, 1,1-dimethoxy-1-silacyclobutane, 1,1-diethoxy-1-silacyclobutane, 1,1-di-n-propyloxy-1-silacyclobutane, 1,1-di-iso-propyloxy-1-silacyclobutane, 1,1-dimethoxy-1-silacyclohexane, 1,1-di-iso-propyloxy-1-silacyclohexane, 1,1-di-n-propyloxy-1-silacyclohexane, 1-methoxy-1-acetoxy-1-silacyclopentane, 1,1-diacetoxy-1-silacyclopentane, 1-methoxy-1-acetoxy-1-silacyclobutane, 1,1-diacetoxy-1-silacyclobutane, 1-methoxy-1-acetoxy-1-silacyclohexane, 1,1-diacetoxy-1-silacyclohexane, 1-ethoxy-1-acetoxy-1-silacyclopentane, 1-ethoxy-1-acetoxy-1-silacyclobutane, and combinations thereof. 
     
     
         17 . The method of  claim 14  wherein the silicon precursor included in the gaseous reagents includes less than 100 ppm of any halide ion impurities. 
     
     
         18 . The method of  claim 14  wherein the silicon precursor included in the gaseous reagents includes less than 5 ppm of any metal ion impurities.