US2022199536A1PendingUtilityA1
Microelectronic structures including bridges
Est. expiryDec 18, 2040(~14.4 yrs left)· nominal 20-yr term from priority
H10W 74/00H10W 74/142H10W 72/0198H10W 72/877H10W 90/00H10W 99/00H10W 72/20H10W 72/072H10W 72/07207H10W 72/247H10W 72/07254H10W 72/07252H10W 90/724H10W 90/722H10W 72/227H10W 72/241H10W 90/734H10W 90/401H10W 70/685H10W 90/701H10W 20/43H10W 70/24H10W 70/611H10W 70/65H10W 70/641H10W 74/141H10W 74/15H10W 74/012H10W 70/093H10P 72/7424H10P 72/74H01L 24/16H01L 23/5381H01L 23/3185H01L 2924/18161H01L 21/563H01L 2224/16227H01L 21/4853H10W 80/721H10W 90/791
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Claims
Abstract
Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.
Claims
exact text as granted — not AI-modified1 . A microelectronic assembly, comprising:
a substrate having a first conductive contact; a bridge component having a second conductive contact on a first face of the bridge component and a third conductive contact on a second, opposing face of the bridge component, wherein the first conductive contact is coupled to the second conductive contact by first solder, and the first solder contacts side faces of the first conductive contact and the second conductive contact; and a microelectronic component having a fourth conductive contact, wherein the third conductive contact is coupled to the fourth conductive contact by second solder, and the third conductive contact contacts the fourth conductive contact.
2 . The microelectronic assembly of claim 1 , wherein the second solder does not contact solder coupling another conductive contact at the second face of the bridge component to another conductive contact of the microelectronic component.
3 . The microelectronic assembly of claim 1 , wherein a diameter of the fourth conductive contact is different than a diameter of the third conductive contact.
4 . The microelectronic assembly of claim 3 , wherein the diameter of one of the third conductive contact and the fourth conductive contact is less than 60% of the diameter of an other of the third conductive contact and the fourth conductive contact.
5 . The microelectronic assembly of claim 1 , wherein the second solder contacts side faces of the fourth conductive contact.
6 . The microelectronic assembly of claim 1 , wherein a center of the first conductive contact is not aligned with a center of the second conductive contact.
7 . The microelectronic assembly of claim 1 , wherein the substrate includes an organic dielectric material.
8 . The microelectronic assembly of claim 1 , wherein the microelectronic component is a first microelectronic component, the microelectronic assembly further includes a second microelectronic component, and the bridge component is at least partially between the second microelectronic component and the substrate.
9 . A microelectronic assembly, comprising:
a substrate having a first conductive contact; a bridge component having a second conductive contact on a first face of the bridge component and a third conductive contact on a second, opposing face of the bridge component, wherein the first conductive contact is coupled to the second conductive contact by first solder, and the first solder contacts side faces of the first conductive contact and the second conductive contact; and a microelectronic component having a fourth conductive contact, wherein the third conductive contact is coupled to the fourth conductive contact by second solder.
10 . The microelectronic assembly of claim 9 , wherein a diameter of the fourth conductive contact is less than a diameter of the third conductive contact.
11 . The microelectronic assembly of claim 9 , wherein the second solder contacts side faces of the fourth conductive contact.
12 . The microelectronic assembly of claim 9 , wherein a center of the first conductive contact is not aligned with a center of the second conductive contact.
13 . The microelectronic assembly of claim 9 , wherein the first conductive contact is one of a plurality of first conductive contacts having a pitch that is greater than 50 microns.
14 . The microelectronic assembly of claim 9 , wherein the substrate includes an organic dielectric material.
15 . A microelectronic assembly, comprising:
a substrate having a first conductive contact; a bridge component having a second conductive contact on a first face of the bridge component and a third conductive contact on a second, opposing face of the bridge component, wherein the first conductive contact is coupled to the second conductive contact by first solder; and a microelectronic component having a fourth conductive contact, wherein the third conductive contact is coupled to the fourth conductive contact by second solder, and a diameter of the fourth conductive contact is different than a diameter of the third conductive contact.
16 . The microelectronic assembly of claim 15 , wherein the diameter of one of the third conductive contact and the fourth conductive contact is less than 60% of the diameter of an other of the third conductive contact and the fourth conductive contact.
17 . The microelectronic assembly of claim 15 , wherein the diameter of one of the third conductive contact and the fourth conductive contact is less than 50% of the diameter of an other of the third conductive contact and the fourth conductive contact.
18 . The microelectronic assembly of claim 15 , wherein the second solder contacts side faces of the fourth conductive contact.
19 . The microelectronic assembly of claim 15 , wherein the first solder contacts side faces of the first conductive contact and the second conductive contact.
20 . The microelectronic assembly of claim 15 , wherein a center of the first conductive contact is not aligned with a center of the second conductive contact.Cited by (0)
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