Processing of Semiconductors Using Vaporized Solvents

Abstract

Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

1 - 11 . (canceled) 
     
     
         12 . A semiconductor workpiece processing apparatus comprising:
 a solvent storage receptacle;   a vaporizer configured to vaporize a solvent from the solvent storage receptacle to generate a vaporized solvent;   a process chamber;   a plasma chamber having an RF source operable to generate a plasma, the plasma chamber being remote from the process chamber; and   a solvent line that connects the solvent storage receptacle to the process chamber, the solvent line operable to introduce the vaporized solvent into the process chamber.   
     
     
         13 . The semiconductor workpiece processing apparatus of claim  11 , wherein the solvent comprises one or more of one or more of isopropyl alcohol (IPA), acetone, methanol, N-methyl-2-pyrrolidone (NMP), N-ethyl-2-pyrrolidone (NEP), dimethyl sulfoxide (DMSO), propylene glycol methyl ether acetate (PGMEA), methyl ethyl ketone (MEK), n-Butyl acetate (NBA), γ-butyrolactone (GBL), propylene carbonate (PC), triethylamine (TEA), and acetonitrile. 
     
     
         14 . The apparatus of  claim 12 , wherein the plasma chamber is connected between the solvent line and the process chamber. 
     
     
         15 . The apparatus of  claim 14 , further comprising a separation grid separating the plasma chamber from the process chamber. 
     
     
         16 . The apparatus of  claim 12 , further comprising a mass flow meter or a volumetric flow meter on the solvent line. 
     
     
         17 . The apparatus of  claim 12 , wherein the solvent storage receptacle is a liquid tank, a compressed gas tank, or an ampoule. 
     
     
         18 . The apparatus of  claim 12 , wherein the solvent line feeds directly into the process chamber and bypasses a plasma chamber and a separation grid separating the plasma chamber from the process chamber. 
     
     
         19 . The apparatus of  claim 12 , wherein the solvent line feeds directly into a separation grid separating the plasma chamber from the process chamber. 
     
     
         20 . The apparatus of  claim 19 , wherein the solvent line feeds directly between a plurality of grid plates in the separation grid.