Photomask blank, photomask, and manufacturing method of semiconductor element

Abstract

A photomask blank includes a light-transmitting substrate, and a shading layer part disposed on the light-transmitting substrate, the shading layer part including a first shading layer having a first hardness and a second shading layer having a second hardness. The first shading layer is disposed closer to the light-transmitting substrate than the second shading layer, and a value of the first hardness is larger that a value of the second hardness.

What is claimed is: 
     
         1 . A photomask blank comprising:
 a light-transmitting substrate; and   a shading layer part disposed on the light-transmitting substrate, the shading layer part comprising a first shading layer having a first hardness and a second shading layer having a second hardness,   wherein the first shading layer is disposed closer to the light-transmitting substrate than the second shading layer, and   a value of the first hardness is larger that a value of the second hardness.   
     
     
         2 . The photomask blank of  claim 1 ,
 wherein the second hardness is 0.15 times to 0.55 times of the first hardness.   
     
     
         3 . The photomask blank of  claim 1 ,
 wherein the second hardness is 0.3 kPa to 0.55 kPa.   
     
     
         4 . The photomask blank of  claim 1 ,
 wherein a Young's modulus of the second shading layer is 1.0 kPa or more.   
     
     
         5 . The photomask blank of  claim 1 ,
 wherein a value of standard deviation of adhesion forces of the second shading layer is measured at sixteen positions different from one another, which is 8% or less of an average of the adhesion forces.   
     
     
         6 . The photomask blank of  claim 1 ,
 wherein a value of standard deviation of pull off forces of the second shading layer is measured at sixteen positions different from one another, which is 5% or less of an average of the pull off forces.   
     
     
         7 . The photomask blank of  claim 1 ,
 wherein a second Young's modulus of the second shading layer is 0.15 times to 0.55 times of a first Young's modulus of the first shading layer.   
     
     
         8 . The photomask blank of  claim 1 ,
 wherein a Young's modulus of the second shading layer is 1.0 kPa to 4.2 kPa.   
     
     
         9 . The photomask blank of  claim 1 ,
 wherein a thickness of the second shading layer is 30 nm or more.   
     
     
         10 . The photomask blank of  claim 1 ,
 wherein a thickness ratio of the first shading layer and a thickness ratio of the second shading layer is 1:0.02 to 0.25.   
     
     
         11 . The photomask blank of  claim 1 ,
 wherein a transmissivity of the shading layer part is 1 or more for light having a wavelength of 193 nm.   
     
     
         12 . The photomask blank of  claim 1 ,
 wherein an optical density of the shading layer part is 1.8 or more for light having a wavelength of 193 nm.   
     
     
         13 . A photomask blank comprising:
 a light-transmitting substrate; and   a patterned shading layer part disposed on the light-transmitting substrate, the patterned shading layer part comprising a patterned first shading layer having a first Young's modulus and a patterned second shading layer having a second Young's modulus smaller than the first hardness,   wherein the patterned first shading layer is disposed closer to the light-transmitting substrate than the patterned second shading layer.   
     
     
         14 . A manufacturing method of a semiconductor element comprising:
 preparing a target substrate; and   applying a photomask on one surface of the target substrate to pattern the target substrate to form a patterned target substrate into a semiconductor element,   wherein the photomask comprises a patterned shading layer part disposed on a light-transmitting substrate, the patterned shading layer part comprising a patterned first shading layer having a first Young's modulus and a patterned second shading layer having a second Young's modulus smaller than the first hardness, and   wherein the patterned first shading layer is disposed closer to the light-transmitting substrate than the patterned second shading layer.