Self-aligned contact and contact over active gate structures

Abstract

Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing the formation of self-aligned growth pillars. The pillars lead to taller gate heights and increased margins against shorting defects.

What is claimed is: 
     
         1 . An electronic device comprising:
 a substrate having an active region with at least one gate stack formed thereon, the at least one gate stack having a first side and a second side and comprising a source/drain and a gate metal;   a source/drain contact on the source/drain;   a first dielectric on the contact;   a spacer material adjacent the first side and the second side of the at least one gate stack; and   a second dielectric on the at least one gate stack, wherein the gate metal has a thickness in a range of about 0.5 nm to about 2000 nm and the second dielectric has a thickness in a range of about 0.5 nm to about 2000 nm.   
     
     
         2 . The electronic device of  claim 1 , wherein the gate metal comprises a metal selected from one or more of cobalt, tungsten, titanium, molybdenum, nickel, ruthenium, silver, iridium, or platinum, wherein the spacer material comprises one or more of aluminum oxide, silicon oxycarbide, silicon oxynitride, silicon carbonitride, or silicon oxycarbonitride, wherein the source/drain comprises one or more of copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), gold (Au), iridium (Ir), or platinum (Pt), phosphorus (P), germanium (Ge), silicon (Si), aluminum (Al), or zirconium (Zr). 
     
     
         3 . The electronic device of  claim 1 , wherein the first dielectric and the second dielectric independently comprise one or more of silicon carbide, silicon nitride, tungsten carbide, or tungsten oxide. 
     
     
         4 . The electronic device of  claim 1 , further comprising a contact on the source/drain contact and the spacer material. 
     
     
         5 . The electronic device of  claim 1 , further comprising a first liner surrounding the gate metal. 
     
     
         6 . The electronic device of any one of  claim 5 , further comprising a second liner surrounding the contact. 
     
     
         7 . The electronic device of  claim 4 , wherein the source/drain contact and the contact independently comprise one or more of nitrogen (N), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), gold (Au), iridium (Ir), tantalum (Ta), or platinum (Pt). 
     
     
         8 . An electronic device comprising:
 a substrate having an active region with at least one gate stack formed thereon, the at least one gate stack having a first side and a second side and comprising a source/drain and a gate metal;   a source/drain contact on the source/drain; and   a dielectric on the at least one gate stack, wherein the gate metal has a thickness in a range of about 0.5 nm to about 2000 nm and the dielectric has a thickness in a range of about 0.5 nm to about 2000 nm.   
     
     
         9 . The electronic device of  claim 8 , further comprising a spacer material adjacent the first side and the second side of the at least one gate stack, wherein the spacer material comprises one or more of aluminum oxide, silicon oxycarbide, silicon oxynitride, silicon carbonitride, or silicon oxycarbonitride. 
     
     
         10 . The electronic device of  claim 8 , wherein the gate metal comprises a metal selected from one or more of cobalt, tungsten, titanium, molybdenum, nickel, ruthenium, silver, iridium, or platinum, wherein the source/drain comprises one or more of copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), gold (Au), iridium (Ir), or platinum (Pt), phosphorus (P), germanium (Ge), silicon (Si), aluminum (Al), or zirconium (Zr), wherein the dielectric comprises one or more of silicon carbide, silicon nitride, tungsten carbide, or tungsten oxide. 
     
     
         11 . The electronic device of  claim 8 , further comprising a contact on the source/drain contact, wherein the source/drain contact and the contact independently comprise one or more of nitrogen (N), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), gold (Au), iridium (Ir), tantalum (Ta), or platinum (Pt). 
     
     
         12 . The electronic device of  claim 8 , further comprising a first liner surrounding the gate metal and a second liner surrounding the source/drain contact.