Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor

Abstract

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

1 - 18 . (canceled) 
     
     
         19 . A substrate comprising:
 a molybdenum carbide seed layer deposited onto titanium nitride by chemical vapor deposition, the molybdenum carbide seed layer derived from bis(alkyl-arene) molybdenum precursor and the molybdenum carbide seed layer comprising Mo 2 C or MoC and the molybdenum carbide seed layer consists essentially of molybdenum carbide, and   metallic molybdenum deposited on the seed layer by chemical vapor deposition, the metallic molybdenum derived from molybdenum halide precursor or molybdenum oxyhalide precursor.   
     
     
         20 . The substrate of  claim 19 , wherein the bis(alkyl-arene) molybdenum is bis(ethyl-benzene) molybdenum. 
     
     
         21 . The substrate of  claim 19 , wherein the molybdenum halide precusor or molybdenum oxyhalide precursor is selected from the group consisting of MoOCl 4 , MoCl 5 , and MoF 6 . 
     
     
         22 . The substrate of  claim 19 , wherein the seed layer has a thickness of from 5 angstroms to 100 angstroms. 
     
     
         23 . The substrate of  claim 19 , wherein the seed layer has a thickness of from 5 angstroms to 50 angstroms. 
     
     
         24 . The substrate of  claim 19 , wherein the seed layer contains not more than 1 percent (atomic) of any material other than carbon and molybdenum. 
     
     
         25 . The substrate of  claim 19 , wherein the seed layer contains not more than 0.1 percent (atomic) of any material other than carbon and molybdenum. 
     
     
         26 . The substrate of  claim 19 , wherein the seed layer contains not more than 0.01 percent (atomic) of any material other than carbon and molybdenum. 
     
     
         27 . A substrate comprising:
 A molybdenum carbide seed layer deposited onto titanium nitride by chemical vapor deposition, the molybdenum carbide seed layer derived from bis(alkyl-arene) molybdenum precursor and the molybdenum carbide seed layer comprising Mo 2 C or MoC and the molybdenum carbide seed layer consists of molybdenum carbide and molybdenum metal, and   metallic molybdenum deposited on the seed layer by chemical vapor deposition, the metallic molybdenum derived from molybdenum halide precursor or molybdenum oxyhalide precursor.   
     
     
         28 . The substrate of  claim 30 , wherein the bis(alkyl-arene) molybdenum is bis(ethyl-benzene) molybdenum. 
     
     
         29 . The substrate of  claim 30 , wherein the molybdenum halide precusor or molybdenum oxyhalide precursor is selected from the group consisting of MoOCl 4 , MoCl 5 , and MoF 6 . 
     
     
         30 . The substrate of  claim 30 , wherein the seed layer has a thickness of from 5 angstroms to 100 angstroms. 
     
     
         31 . The substrate of  claim 30 , wherein the seed layer has a thickness of from 5 angstroms to 50 angstroms. 
     
     
         32 . A substrate comprising:
 A molybdenum carbide seed layer deposited onto titanium nitride by chemical vapor deposition, the molybdenum carbide seed layer derived from bis(alkyl-arene) molybdenum precursor and the molybdenum carbide seed layer consists essentially of molybdenum carbide, and   metallic molybdenum deposited on the seed layer by chemical vapor deposition, the metallic molybdenum derived from molybdenum halide precursor or molybdenum oxyhalide precursor.   
     
     
         33 . The substrate of claim  35 , wherein the seed layer contains not more than 1 percent (atomic) of any material other than carbon and molybdenum.