Erosion resistant metal oxide coatings deposited by atomic layer deposition

Abstract

Embodiments of the present disclosure relate to articles, coated articles and methods of coating such articles with a rare earth metal containing oxide coating. A method of co-depositing a rare earth metal containing oxide coating on a surface of an article is disclosed. The method includes contacting the article surface with a first or second metal containing precursor to form a partial metal adsorption layer of a first metal or a second metal. The method further includes contacting the partial metal adsorption layer with the first or second metal containing precursor to form a co-adsorption layer of the first metal and the second metal. The method further includes contacting the co-adsorption layer with a reactant to form the rare earth metal containing oxide coating.

What is claimed is: 
     
         1 . A method comprising:
 co-depositing a rare earth metal containing oxide coating on a surface of an article using atomic layer deposition, wherein co-depositing the rare earth metal containing oxide coating comprises:
 contacting the surface with a first metal containing precursor or a second metal containing precursor for a first duration to form a partial metal adsorption layer comprising a first metal (M1) or a second metal (M2), wherein the first metal containing precursor or the second metal containing precursor is selected from a group consisting of a rare earth metal containing precursor, a zirconium containing precursor, a hafnium containing precursor, an aluminum containing precursor and a tantalum containing precursor; 
 contacting the partial metal adsorption layer with the second metal containing precursor or the first metal containing precursor for a second duration to form a co-adsorption layer comprising the first metal and the second metal, wherein the first metal is different from the second metal; and 
 contacting the co-adsorption layer with a reactant to form the rare earth metal containing oxide coating, 
   wherein the rare earth metal containing oxide coating comprises about 1 mol % to about 40 mol % of the first metal and about 1 mol % to about 40 mol % of the second metal, and   wherein the rare earth metal containing oxide coating comprises a homogenous mixture of the first metal and the second metal.   
     
     
         2 . The method of  claim 1 , wherein co-depositing the rare earth metal containing oxide coating comprises:
 performing at least one M1-M2 co-deposition cycle, comprising:
 contacting the surface with the first metal containing precursor to form the partial metal adsorption layer; 
 subsequently contacting the partial metal adsorption layer with the second metal containing precursor to form a M1-M2 co-adsorption layer; and 
 contacting the M1-M2 co-adsorption layer with the reactant, 
   wherein the at least one M1-M2 co-deposition cycle results in a layer comprising a first percentage of the first metal and a second percentage of the second metal.   
     
     
         3 . The method of  claim 2 , wherein co-depositing the rare earth metal containing oxide coating further comprises:
 performing at least one M2-M1 co-deposition cycle comprising:
 contacting the surface with the second metal containing precursor to form a second partial metal adsorption layer; 
 subsequently contacting the second partial metal adsorption layer with the first metal containing precursor to form a M2-M1 co-adsorption layer; and 
 contacting the M2-M1 co-adsorption layer with the reactant, 
   wherein the at least one M2-M1 co-deposition cycle results in an additional partial metal adsorption layer comprising a third percentage of the first metal and a fourth percentage of the second metal, wherein the third percentage is lower than the first percentage and the fourth percentage is greater than the second percentage.   
     
     
         4 . The method of  claim 3 , further comprising:
 selecting a ratio of a first number of M1-M2 co-deposition cycles and a second number of M2-M1 co-deposition cycles that results in a target first mol % of the first metal and a target second mol % of the second metal; and   performing a plurality of deposition super-cycles, wherein each deposition super-cycle comprises performing the first number of M1-M2 co-deposition cycles and performing the second number of M2-M1 deposition cycles.   
     
     
         5 . The method of  claim 3 , wherein:
 performing the at least one M1-M2 co-deposition cycle, comprises:
 contacting the surface with the first metal containing precursor for about 50 milliseconds to about 60 seconds; 
 contacting the partial metal adsorption layer with the second metal containing precursor for about 50 milliseconds to about 60 seconds; and 
 contacting the M1-M2 co-adsorption layer with the reactant for about 50 milliseconds to about 60 seconds; and 
   performing the at least one M2-M1 co-deposition cycle comprises:
 contacting the surface with the second metal containing precursor for about 50 milliseconds to about 60 seconds; 
 contacting the additional partial metal adsorption layer with the first metal containing precursor for about 50 milliseconds to about 60 seconds; and 
   contacting the M2-M1 co-adsorption layer with the reactant for about 50 milliseconds to about 60 seconds.   
     
     
         6 . The method of  claim 1 , wherein the first metal containing precursor and the second metal containing precursor are independently selected from a group consisting of a cyclopentadienyl-based precursor, tris(methylcyclopentadienyl)yttrium ((CH 3 Cp) 3 Y), tris(butylcyclopentadienyl)yttrium, tris(cyclopentadienyl)yttrium, tris(ethylcyclopentadienyl)yttrium, tris-methylcyclopentadienyl erbium(III) (Er(MeCp) 3 ), tris(butylcyclopentadienyl) erbium(III), an amidinate-based precursor, Tris(N,N′-di-i-propylformamidinato)yttrium, tris(2,2,6,6-tetramethyl-heptane-3,5-dionate)yttrium, tris(bis(trimethylsilyl)amido)lanthanum, an amide-based precursor, erbium boranamide (Er(BA) 3 ), a betadiketonate-based precursor, erbium(III), tris(2,2,6,6-tetramethyl-3,5-heptanedionate), tris(dimethylamino)(cyclopentadienyl)zirconium, tetrakis(dimethylamido)zirconium, tetrakis(diethylamido)zirconium, tetrakis(N,N′-dimethyl-formamidinate)zirconium, tetra(ethylmethylamido)hafnium, and pentakis(dimethylamido)tantalum. 
     
     
         7 . The method of  claim 1 , further comprising:
 contacting the co-adsorption layer with a third precursor to adsorb a third metal prior to contacting the co-adsorption layer with the reactant, wherein the third precursor is selected from a group consisting of a yttrium precursor, an erbium precursor, a zirconium precursor, a hafnium precursor, a silicon precursor, a tantalum precursor, a lanthanum precursor, a lutetium precursor, a scandium precursor, a gadolinium precursor, a samarium precursor and a dysprosium precursor.   
     
     
         8 . The method of  claim 1 , further comprising:
 depositing a buffer layer on the surface of the article via atomic layer deposition and co-depositing the rare earth metal containing coating on the buffer layer, wherein the buffer layer comprises at least one of an aluminum oxide, a silicon oxide or aluminum nitride.   
     
     
         9 . The method of  claim 1 , wherein the rare earth metal containing oxide coating comprises a composition selected from a group consisting of Y x Zr y O z , Y x Er y O z , Er x Zr y O z  La x Zr y O z  Lu x Zr y O z  Sc x Zr y O z  Gd x Zr y O z  Sm x Zr y O z , Dy x Zr y O z , Y x Hf y O z , Er x Hf y O z  La x Hf y O z  Lu x Hf y O z  Sc x Hf y O z  Gd x Hf y O z  Sm x Hf y O z , Dy x Hf y O z  and combinations thereof. 
     
     
         10 . A method comprising:
 co-depositing a rare earth metal containing oxide coating on a surface of an article using atomic layer deposition, wherein co-depositing the rare earth metal containing oxide coating comprises:
 performing at least one co-dosing cycle comprising:
 contacting the surface with a mixture of a first precursor and a second precursor for a first duration to form a co-adsorption layer, wherein the first precursor and the second precursor are each independently selected from a group consisting of a rare earth metal containing precursor, a zirconium containing precursor, a hafnium containing precursor, an aluminum containing precursor and a tantalum containing precursor; and 
 contacting the co-adsorption layer with an oxygen containing reactant to form the rare earth metal containing oxide coating, 
 
 wherein the rare earth metal containing oxide coating comprises about 1 mol % to about 40 mol % of a first metal (M1) and about 1 mol % to about 40 mol % of a second metal (M2), wherein the first metal and the second metal are independently selected from a group consisting of a rare earth metal, zirconium, hafnium, aluminum and tantalum, wherein the first metal is different from the second metal, and 
   wherein the rare metal containing oxide coating comprises a homogenous mixture of the first metal and the second metal.   
     
     
         11 . The method of  claim 10 , wherein the mixture further comprises a third precursor comprising a metal different from the first metal of the first precursor and the second metal of the second precursor, wherein the metal in the third precursor is selected from a group consisting of yttrium, erbium, lanthanum, lutetium, scandium, gadolinium, samarium, dysprosium, zirconium, hafnium and tantalum, and wherein the homogenous mixture further comprises the metal of the third precursor. 
     
     
         12 . The method of  claim 10 , wherein co-depositing the rare earth metal containing oxide coating comprises:
 performing at least one M1-M2 co-deposition cycle, comprising:
 contacting the surface with the first metal containing precursor to form a first layer; 
 subsequently contacting the first layer with the second metal containing precursor to form a M1-M2 co-adsorption layer; and 
 contacting the M1-M2 co-adsorption layer with the reactant, 
   wherein the at least one M1-M2 co-deposition cycle results in a layer comprising a first percentage of the first metal and a second percentage of the second metal.   
     
     
         13 . The method of  claim 10 , wherein the first metal containing precursor and the second metal containing precursor are independently selected from a group consisting of a cyclopentadienyl-based precursor, tris(methylcyclopentadienyl)yttrium ((CH 3 Cp) 3 Y), tris(butylcyclopentadienyl)yttrium, tris(cyclopentadienyl)yttrium, tris(ethylcyclopentadienyl)yttrium, tris-methylcyclopentadienyl erbium(III) (Er(MeCp) 3 ), tris(butylcyclopentadienyl) erbium(III), an amidinate-based precursor, Tris(N,N′-di-i-propylformamidinato)yttrium, tris(2,2,6,6-tetramethyl-heptane-3,5-dionate)yttrium, tris(bis(trimethylsilyl)amido)lanthanum, an amide-based precursor, erbium boranamide (Er(BA) 3 ), a betadiketonate-based precursor, erbium(III), tris(2,2,6,6-tetramethyl-3,5-heptanedionate), tris(dimethylamino)(cyclopentadienyl)zirconium, tetrakis(dimethylamido)zirconium, tetrakis(diethylamido)zirconium, tetrakis(N,N′-dimethyl-formamidinate)zirconium, tetra(ethylmethylamido)hafnium, and pentakis(dimethylamido)tantalum. 
     
     
         14 . The method of  claim 10 , further comprising:
 depositing a buffer layer on the surface of the article via atomic layer deposition and co-depositing the rare earth metal containing coating on the buffer layer, wherein the buffer layer comprises at least one of an aluminum oxide, a silicon oxide or aluminum nitride.   
     
     
         15 . The method of  claim 10 , wherein the rare earth metal containing oxide coating comprises a composition selected from a group consisting of Y x Zr y O z , Y x Er y O z , Er x Zr y O z  La x Zr y O z  Lu x Zr y O z  Sc x Zr y O z  Gd x Zr y O z  Sm x Zr y O z , Dy x Zr y O z , Y x Hf y O z , Er x Hf y O z  La x Hf y O z  Lu x Hf y O z  Sc x Hf y O z  Gd x Hf y O z  Sm x Hf y O z , Dy x Hf y O z  and combinations thereof. 
     
     
         16 . A method comprising:
 depositing a rare earth metal containing oxide coating on a surface of an article using atomic layer deposition, wherein depositing the rare earth metal containing oxide coating comprises:
 contacting the surface with a first precursor for a first duration to form a first metal adsorption layer; 
 contacting the first metal adsorption layer with a reactant to form a first metal layer; 
 contacting the first metal layer with a second precursor for a second duration to form a second metal adsorption layer; 
 contacting the second metal adsorption layer with the reactant to form a second metal layer; and 
 forming the rare earth metal containing oxide coating from the first metal layer and the second metal layer, 
   wherein the rare earth metal containing oxide coating comprises about 1 mol % to about 40 mol % of a first metal and about 1 mol % to about 40 mol % of a second metal, wherein the first metal and the second metal are independently selected from a group consisting of a rare earth metal, hafnium and tantalum, wherein the first metal is different from the second metal.   
     
     
         17 . The method of  claim 16 , wherein the first metal containing precursor and the second metal containing precursor are independently selected from a group consisting of a cyclopentadienyl-based precursor, tris(methylcyclopentadienyl)yttrium ((CH 3 Cp) 3 Y), tris(butylcyclopentadienyl)yttrium, tris(cyclopentadienyl)yttrium, tris(ethylcyclopentadienyl)yttrium, tris-methylcyclopentadienyl erbium(III) (Er(MeCp) 3 ), tris(butylcyclopentadienyl) erbium(III), an amidinate-based precursor, Tris(N,N′-di-i-propylformamidinato)yttrium, tris(2,2,6,6-tetramethyl-heptane-3,5-dionate)yttrium, tris(bis(trimethylsilyl)amido)lanthanum, an amide-based precursor, erbium boranamide (Er(BA) 3 ), a betadiketonate-based precursor, erbium(III), tris(2,2,6,6-tetramethyl-3,5-heptanedionate), tris(dimethylamino)(cyclopentadienyl)zirconium, tetrakis(dimethylamido)zirconium, tetrakis(diethylamido)zirconium, tetrakis(N,N′-dimethyl-formamidinate)zirconium, tetra(ethylmethylamido)hafnium, and pentakis(dimethylamido)tantalum. 
     
     
         18 . The method of  claim 16 , further comprising:
 contacting the first metal adsorption layer with a third precursor to adsorb a third metal prior to contacting the first metal adsorption layer with the reactant, wherein the third precursor is selected from a group consisting of a yttrium precursor, an erbium precursor, a zirconium precursor, a hafnium precursor, a silicon precursor, a tantalum precursor, a lanthanum precursor, a lutetium precursor, a scandium precursor, a gadolinium precursor, a samarium precursor and a dysprosium precursor.   
     
     
         19 . The method of  claim 16 , further comprising:
 depositing a buffer layer on the surface of the article via atomic layer deposition and co-depositing the rare earth metal containing coating on the buffer layer, wherein the buffer layer comprises at least one of an aluminum oxide, a silicon oxide or aluminum nitride.   
     
     
         20 . The method of  claim 16 , wherein the rare earth metal containing oxide coating comprises a composition selected from a group consisting of Y x Zr y O z , Y x Er y O z , Er x Zr y O z  La x Zr y O z  Lu x Zr y O z  Sc x Zr y O z  Gd x Zr y O z  Sm x Zr y O z , Dy x Zr y O z , Y x Hf y O z , Er x Hf y O z  La x Hf y O z  Lu x Hf y O z  Sc x Hf y O z  Gd x Hf y O z  Sm x Hf y O z , Dy x Hf y O z  and combinations thereof.