Through Package Vertical Interconnect and Method of Making Same

Abstract

In integrated circuit packages, a coaxial pair of signals are routed through a plated through hole between circuitry on one face of the core substrate material with circuitry on an opposing face of the core substrate material. Provided are methods and apparatuses where signals are routed within a concentric reference conductor within traditional package substrates. Methods for forming a hole in the core substrate material through which the coaxial pair of signals is passed on a fine pitch.

What is claimed is: 
     
         1 . A method of forming a coaxial structure, said coaxial structure comprising a concentric reference structure and a first and second through-via formed therein, in an insulative semiconductor substrate core, said method comprising the steps of:
 forming a hole in said insulative semiconductor substrate core, said hole having an inner surface from a first side of said insulative semiconductor substrate core to a second side of said insulative semiconductor substrate core;   depositing over said inner surface of said hole in said insulative semiconductor substrate a conductive material to form said concentric reference structure from said first side of said insulative semiconductor substrate core to said second side of said insulative semiconductor substrate core through said hole;   depositing a first dielectric material in said hole;   depositing a second dielectric material on said surface of said first and second sides of said insulative semiconductor substrate core;   forming said first and second through-via through said second dielectric material on said first and second sides of said insulative semiconductor substrate core and within said first dielectric material in said hole.   
     
     
         2 . The method of  claim 1  wherein said first dielectric material and said second dielectric material are the same dielectric material. 
     
     
         3 . The method of  claim 1  wherein said first dielectric material and said second dielectric material are different dielectric materials. 
     
     
         4 . The method of  claim 1  wherein said depositing over said inner surface of said hole a conductive material to form said concentric reference structure is by conductive ink-fill techniques. 
     
     
         5 . The method of  claim 1  wherein said forming of said first and second through-via is by conductive ink-fill techniques. 
     
     
         6 . A method for forming a coaxial structure, said coaxial structure comprising a concentric reference structure and a first and second through via formed therein, in a conductive semiconductor substrate core, said method comprising the steps of:
 forming a first hole in said conductive semiconductor substrate core, said first hole having an inner surface from a first side of said conductive semiconductor substrate core to a second side of said conductive semiconductor substrate core;   depositing a first dielectric material in said first hole;   forming a second hole within said dielectric material deposited in said first hole;   depositing over said inner surface of said second hole in said conductive semiconductor substrate a conductive material to form said concentric reference structure from said first side of said conductive semiconductor substrate core to said second side of said conductive semiconductor substrate core through said second hole;   depositing a second dielectric material in said second hole;   forming a first and second through vias within said second dielectric material in said second hole.   
     
     
         7 . The method of  claim 6  wherein said first dielectric material and said second dielectric material are the same dielectric material. 
     
     
         8 . The method of  claim 6  wherein said first dielectric material and said second dielectric material are different dielectric materials. 
     
     
         9 . The method of  claim 6  wherein said forming of said concentric reference structure is by conductive ink-fill techniques. 
     
     
         10 . The method of  claim 6  wherein said forming of said first and second through via is by conductive ink-fill techniques. 
     
     
         11 . A packaging substrate core comprising:
 a substrate comprising:
 a first surface; 
 a cavity formed into said first surface to a depth less than the thickness of said insulating substrate; 
 an active component disposed said cavity; and 
 a vertical interconnect module disposed within said cavity. 
   
     
     
         12 . The packaging substrate core of  claim 11  further comprising said substrate further comprising a first conductive slug module disposed within said cavity. 
     
     
         13 . The packaging substrate core of  claim 11  further comprising said substrate further comprising a vertical interconnect through a cavity fill material. 
     
     
         14 . The packaging substrate core of  claim 13  wherein said vertical interconnect through said cavity fill material is not through said substrate core.