Compositions and processes for depositing carbon-doped silicon-containing films

Abstract

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 , wherein R 8 , R 9 , and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

1 . A method of forming a carbon-doped silicon nitride film via an atomic layer deposition process, the method comprising the steps of:
 a. providing a substrate in a reactor;   b. introducing into the reactor a precursor comprising at least one organoaminosilane having a formula of R 5 (NR 3 R 4 )H 2 , wherein   R 3  and R 4  are independently selected from the group consisting of a C 1  to C 10  linear or branched alkyl group, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group; and wherein R 3  and R 4  can also form a cyclic or alkyl substituted cyclic ring;   R 5  is selected from the group consisting of a C 1  to C 10  linear or branched alkyl group, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group;   c. purging the reactor with a purge gas;   d. introducing a nitrogen source into the reactor wherein the nitrogen source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixture thereof; and   e. purging the reactor with a purge gas,   wherein steps b through e are repeated until a desired thickness of the film is obtained.   
     
     
         2 . The method of  claim 1  wherein the at least one organoaminoalkylsilane is selected from the group consisting of di-iso-propylaminomethylsilane, di-sec-butylaminomethylsilane, and di-iso-propylaminophenylsilane. 
     
     
         3 . The method of  claim 1  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having a formula of (Me 2 N)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, and phenyl. 
     
     
         4 . The method of  claim 1  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having a formula of (Et 2 N)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, and phenyl. 
     
     
         5 . The method of  claim 1  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having a formula of ( i Pr 2 N)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, and phenyl. 
     
     
         6 . The method of  claim 1  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having a formula of ( s Bu 2 N)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, and phenyl. 
     
     
         7 . The method of  claim 1  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having the formula (2,6-dimethylpiperidino)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl. 
     
     
         8 . The method of  claim 1  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having the formula (phenylmethylamino)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl. 
     
     
         9 . A method of forming a carbon-doped silicon oxide film via an atomic layer deposition process, the method comprising the steps of:
 a. providing a substrate in a reactor;   b. introducing into the reactor at least one compound selected from the group consisting of:   an organoaminosilane having a formula of R 5 (NR 3 R 4 )H 2 , wherein   R 3  and R 4  are independently selected from the group consisting of a C 1  to C 10  linear or branched alkyl group, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group; and wherein R 3  and R 4  can also form a cyclic or alkyl substituted cyclic ring;   R 5  is selected from the group consisting of a C 1  to C 10  linear or branched alkyl group, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group;   c. purging the reactor with a purge gas;   d. introducing an oxygen source into the reactor wherein the oxygen source is selected from the group consisting of water, water plasma, oxygen, peroxide, oxygen plasma, ozone, NO, NO 2 , carbon monoxide, carbon dioxide, and combinations thereof; and   e. purging the reactor with a purge gas, wherein steps b through e are repeated until a desired thickness of the film is obtained.   
     
     
         10 . The method of  claim 9  wherein the at least one organoaminoalkylsilane is selected from the group consisting of di-iso-propylaminomethylsilane, di-sec-butylaminomethylsilane, and di-iso-propylaminophenylsilane. 
     
     
         11 . The method of  claim 9  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having a formula of (Me 2 N)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, and phenyl. 
     
     
         12 . The method of  claim 9  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having a formula of (Et 2 N)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, and phenyl. 
     
     
         13 . The method of  claim 9  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having a formula of ( i Pr 2 N)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, and phenyl. 
     
     
         14 . The method of  claim 9  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having a formula of ( s Bu 2 N)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, and phenyl. 
     
     
         15 . The method of  claim 9  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having the formula (2,6-dimethylpiperidino)R5SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl. 
     
     
         16 . The method of  claim 9  wherein the at least one organoaminoalkylsilane comprises an organoaminoalkylsilane having the formula (phenylmethylamino)R 5 SiH 2  wherein R 5  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl.