US2023411336A1PendingUtilityA1

Semiconductor wafer, clip and semiconductor device

Assignee: INFINEON TECHNOLOGIES AUSTRIA AGPriority: Mar 26, 2020Filed: Aug 3, 2023Published: Dec 21, 2023
Est. expiryMar 26, 2040(~13.7 yrs left)· nominal 20-yr term from priority
H10W 72/647H10W 90/766H10W 72/886H10W 72/691H10W 72/981H10W 72/987H10W 72/985H10W 72/352H10W 90/736H10W 72/652H10W 72/634H10W 72/631H10W 72/50H10W 70/692H10W 70/68H10W 72/868H10W 72/641H10W 72/342H10W 72/076H10W 72/074H10P 72/7438H10P 72/7426H10P 95/112H10W 72/071H10W 72/0198H10P 95/11H10D 62/8325H10W 72/681H10W 72/646H01L 24/37H01L 24/29H01L 24/73H01L 24/83H01L 24/84H01L 2224/84345H01L 2224/29021H01L 2224/37012H01L 2224/3702H01L 2224/73213H01L 2224/83851H01L 24/94
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Claims

Abstract

A semiconductor wafer includes: a first main surface and a second main surface opposite the first main surface; a detachment plane parallel to the first main surface inside the semiconductor wafer, the detachment plane defined by defects; electronic semiconductor components formed at the first main surface and between the first main surface and the detachment plane; and a glass structure attached to the first main surface. The glass structure includes openings, each of which leaves a respective area of the electronic semiconductor components uncovered. A method of processing the wafer, a clip, and a semiconductor device are also described.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor wafer, comprising:
 a first main surface and a second main surface opposite the first main surface;   a detachment plane parallel to the first main surface inside the semiconductor wafer, the detachment plane defined by defects;   a plurality of electronic semiconductor components formed at the first main surface and between the first main surface and the detachment plane; and   a glass structure attached to the first main surface, the glass structure comprising a plurality of openings, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered.   
     
     
         2 . The semiconductor wafer of  claim 1 , wherein the semiconductor wafer is a SiC (silicon carbide) wafer. 
     
     
         3 . The semiconductor wafer of  claim 1 , wherein the glass structure is a glass grid. 
     
     
         4 . The semiconductor wafer of  claim 1 , wherein the glass structure comprises glass bars and openings between the glass bars. 
     
     
         5 . The semiconductor wafer of  claim 4 , wherein a width of the openings is in a range of 1 mm to 1.5 mm. 
     
     
         6 . The semiconductor wafer of  claim 4 , wherein the openings are above at least parts of the electronic semiconductor components. 
     
     
         7 . The semiconductor wafer of  claim 4 , wherein the openings leave contact pads of the electronic semiconductor components uncovered by the glass structure. 
     
     
         8 . The semiconductor wafer of  claim 4 , wherein the glass bars are arranged on top of and along kerf lines that separate the electronic semiconductor components. 
     
     
         9 . The semiconductor wafer of  claim 4 , wherein the glass structure has a separate opening for each contact pad of the electronic semiconductor components. 
     
     
         10 . The semiconductor wafer of  claim 4 , wherein a whole surface of an electronic semiconductor component uncovered by an opening of the glass structure forms a contact pad. 
     
     
         11 . The semiconductor wafer of  claim 4 , wherein a whole surface of an electronic semiconductor component uncovered by an opening of the glass structure forms more than one contact pad. 
     
     
         12 . The semiconductor wafer of  claim 4 , wherein each glass bar has two concave surfaces that face the opening that adjoins the glass bar. 
     
     
         13 . The semiconductor wafer of  claim 4 , wherein the glass bars have straight vertical surfaces. 
     
     
         14 . The semiconductor wafer of  claim 1 , wherein the glass structure is irreversibly attached to the first main surface by an adhesive. 
     
     
         15 . A clip for electrically connecting a pad arranged on a bottom of an opening in a glass structure, the clip comprising at least one out of:
 a rivet forming a first portion of the clip, the rivet being riveted to a second portion of the clip;   a single piece of metal sheet bent to form both a first portion and a second portion, wherein the second portion is structured to extend to a terminal, and the first portion has a width about half of the width of the opening or greater and is structured to extend straight to the bottom of the opening.   
     
     
         16 . A semiconductor device, comprising:
 a semiconductor chip with a first main surface and a second main surface opposite the first main surface, the first main surface comprising a pad and a glass structure comprising an opening, a rim of the opening surrounding the pad, wherein an aspect ratio between a thickness of the glass structure surrounding the opening and a width of the opening is one to three or greater;   a carrier to which the semiconductor chip is mounted, with the second main surface facing the carrier;   an adhesive on a bottom of the opening; and   a clip electrically connecting the pad, the clip comprising at least one out of:
 a rivet forming a first portion of the clip, the rivet being riveted to a second portion of the clip; and 
 a single piece bent to form both a first and a second portion, 
 wherein the second portion is structured to extend to a terminal on the carrier, and the first portion is structured to extend straight to the bottom of the opening, the first portion has a width about half of the width of the opening or greater and is electrically connected to the pad by means of the adhesive. 
   
     
     
         17 . The semiconductor device of  claim 16 , wherein the semiconductor chip is a vertical power component. 
     
     
         18 . The semiconductor device of  claim 16 , wherein the first portion of the clip has a length greater than a thickness of the glass structure. 
     
     
         19 . The semiconductor device of  claim 16 , wherein a first end of the first portion of the clip is electrically connected to the pad of the semiconductor chip by an adhesive at a bottom of the opening of the glass structure. 
     
     
         20 . The semiconductor device of  claim 19 , wherein the adhesive is a solder or an electrically conductive paste.

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