Power conversion module

Abstract

A power conversion module and method of forming the same includes a motherboard having a first surface and a second surface that opposes the first surface. The motherboard includes a first trace that electrically couples a decoupling capacitor mounted on the motherboard to a first pad on the first surface of the motherboard and an output node of a power conversion module. The motherboard includes a via extending through the motherboard that electrically couples a second pad on the first surface of the motherboard and a third pad on the second surface of the motherboard to the output node and a second trace that electrically couples a fourth pad on the second surface of the motherboard and the decoupling capacitor. The power module includes a first daughterboard mounted on the first surface of the motherboard and a second daughterboard mounted on the second surface of the motherboard.

What is claimed is: 
     
         1 - 10 . (canceled) 
     
     
         21 . A power conversion module comprising:
 a first daughterboard coupled to a first pad and a second pad on a motherboard, the first daughterboard comprising a high side transistor for the power conversion module; and   a second daughterboard coupled to a third pad and a fourth pad on the mother board, the second daughterboard comprising a low side transistor for the power conversion module.   
     
     
         22 . The power conversion module of  claim 21 , wherein the first daughterboard and the second daughter board are mounted on the mother board. 
     
     
         23 . The power conversion module of  claim 22 , where the first daughterboard is mounted on a first side of the motherboard and the second daughterboard is mounted on a second side of the mother board. 
     
     
         24 . The power conversion module of  claim 21 , wherein the first daughterboard and the second daughterboard have the same footprint. 
     
     
         25 . The power conversion module of  claim 24 , wherein a plane perpendicular to the first surface and the second surface of the motherboard intersects the high side transistor and the low side transistor. 
     
     
         26 . The power conversion module of  claim 21 , wherein the high side transistor and the low side transistor are gallium nitride (GaN) field effect transistors (FETs). 
     
     
         27 . The power conversion module of  claim 26 , wherein the high side transistor is a component of an integrated circuit (IC) chip mounted on the first daughterboard and the low side transistor is a component of an IC chip mounted on the second daughterboard. 
     
     
         28 . The power conversion module of  claim 26 , wherein the high side transistor is formed on a first die integrated with the first daughterboard and the low side transistor is formed on a second die integrated with the second daughterboard. 
     
     
         29 . The power conversion module of  claim 21 , wherein an output node on the motherboard is configured to be coupled to a load and an area circumscribed by a current loop for current flowing through a decoupling capacitor. 
     
     
         30 . The power conversion module of  claim 29 , wherein the high side transistor and the low side transistor define a loop area of the power conversion module. 
     
     
         31 . The power conversion module of  claim 29 , wherein a first leg of the current loop flows in a first direction through the first daughterboard, and a second leg of the current loop flows in a second direction through the second daughterboard, the second direction being opposite of the first direction. 
     
     
         32 . The power conversion module of  claim 21 , further comprising:
 a first thermal substrate thermally coupled to the first daughterboard; and   a second thermal substrate thermally coupled to the second daughterboard.   
     
     
         33 . The power conversion module of  claim 32 , wherein the first thermal substrate comprises:
 a direct bonded copper (DBC) patterned layer overlaying a first surface of a ceramic substrate, the DBC patterned layer being in contact with the first daughterboard; and   a DBC plate overlaying a second surface of the ceramic layer, the DBC plate being electrically isolated from the first daughterboard and in thermal communication with the first daughterboard.   
     
     
         34 . The power conversion module of  claim 33 , further comprising a housing circumscribing edges of the first thermal substrate and the second thermal substrate. 
     
     
         35 . The power conversion module of  claim 33 , wherein the power conversion module is a direct current (DC) to alternating current (AC) power conversion module or a DC-to-DC power conversion module. 
     
     
         36 . A power conversion module comprising:
 a high side transistor electrically coupled to a first pad and a second pad on a motherboard;   a low side transistor electrically coupled to a third pad and a fourth pad on the motherboard;   a first thermal substrate thermally coupled to the high side transistor; and   a second thermal substrate thermally coupled to the low side transistor.   
     
     
         37 . The power conversion module of  claim 36 , wherein a plane perpendicular to the first surface and the second surface of the motherboard intersects the high side transistor and the low side transistor. 
     
     
         38 . The power conversion module of  claim 36 , wherein the high side transistor and the low side transistor are gallium nitride (GaN) field effect transistors (FETs). 
     
     
         39 . A method for forming a power conversion module, the method comprising:
 coupling a decoupling capacitor on a motherboard to a high side transistor on a first daughterboard and coupling the high side transistor to an output node of the power conversion module, the output node being situated on the motherboard; and   coupling a low side transistor on a second daughterboard such that the output node is electrically coupled to a low side transistor of the power conversion module and the low side transistor is electrically coupled to the decoupling capacitor.   
     
     
         40 . The method of  claim 39 , further comprising:
 mounting a first thermal substrate on the power conversion module to contact the first daughterboard; and   mounting a second thermal substrate on the power conversion module to contact the second daughterboard.   
     
     
         41 . The method of  claim 40 , wherein the first daughterboard and the second daughterboard have the same footprint. 
     
     
         42 . The method of  claim 41 , wherein a plane perpendicular to the first surface and the second surface of the motherboard intersects the high side transistor and the low side transistor. 
     
     
         43 . The method of  claim 42 , wherein the high side transistor and the low side transistor are gallium nitride (GaN) field effect transistors (FETs).