Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures

Abstract

A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.

What is claimed is: 
     
         1 . A gas mixture for treating a substrate in a substrate processing system, comprising:
 hydrogen fluoride gas;   a vapor of an alcohol;   an additive consisting of a base; and   a carrier gas.   
     
     
         2 . The gas mixture of  claim 1 , wherein the base is selected from a group consisting of ammonia and an organic base. 
     
     
         3 . The gas mixture of  claim 1 , wherein the base is selected from a group consisting of amines and a heteroaromatic cyclic compound. 
     
     
         4 . The gas mixture of  claim 3 , wherein the heteroaromatic cyclic compound contains at least one nitrogen atom. 
     
     
         5 . The gas mixture of  claim 3 , wherein the heteroaromatic cyclic compound consists of pyridine. 
     
     
         6 . The gas mixture of  claim 1 , wherein the additive is in a range from 0.1 parts per million (ppm) to 2000 ppm (mass) of the gas mixture. 
     
     
         7 . The gas mixture of  claim 6 , wherein the gas mixture includes:
 the hydrogen fluoride gas in a range from 0.5% to 5% volume of the gas mixture;   the mixture of the alcohol and the additive in a range from 0.5% to 2.5% volume of the gas mixture; and   the carrier gas in a range from 92.5% to 99% volume of the gas mixture.   
     
     
         8 . The gas mixture of  claim 6 , wherein the gas mixture includes:
 the hydrogen fluoride gas in a range from 0.05% to 10% volume of the gas mixture;   the mixture of the alcohol and the additive in a range from 0.5% to 2.5% volume of the gas mixture; and   the carrier gas in a range from 87.5% to 99.45% volume of the gas mixture.   
     
     
         9 . The gas mixture of  claim 1 , wherein the alcohol is selected from a group consisting of methanol, isopropyl alcohol and an alcohol including 1 to 4 carbon atoms. 
     
     
         10 . The gas mixture of  claim 1 , wherein the carrier gas consists of molecular nitrogen. 
     
     
         11 . A method for treating high aspect ratio (HAR) structures arranged on a surface of a substrate, comprising:
 a) spin rinsing the surface of the substrate using a first rinsing liquid;   b) spinning off the first rinsing liquid from the surface of the substrate; and   c) directing the gas mixture of  claim 1  onto the surface of the substrate after the first rinsing liquid is dispensed.   
     
     
         12 . The method of  claim 11 , wherein:
 the substrate includes silicon nitride film and silicon dioxide film that are exposed to etching during c), and   the silicon dioxide film is etched relative to the silicon nitride film with a selectivity greater than or equal to four (4) during c).   
     
     
         13 . The method of  claim 11 , wherein c) is performed after b). 
     
     
         14 . The method of  claim 11 , wherein c) is performed within 60 seconds after a). 
     
     
         15 . The method of  claim 11 , wherein the gas mixture is delivered by a nozzle located in a range from 1 mm to 40 mm from the surface of the substrate. 
     
     
         16 . The method of  claim 11 , wherein the gas mixture is delivered from a nozzle at a dispense velocity in a range from 1 to 50 m/s. 
     
     
         17 . The method of  claim 11 , wherein the gas mixture is delivered from a nozzle at a flow rate of 1 to 20 slm. 
     
     
         18 . The method of  claim 11 , wherein a cross-sectional area of an orifice of a nozzle delivering the gas mixture is in a range from 3 to 30 mm 2 . 
     
     
         19 . The method of  claim 11 , wherein a), b) and c) are performed at a temperature in a range from 20° C. to 400° C. 
     
     
         20 . The method of  claim 11 , wherein a), b) and c) are performed at a temperature in a range from 50° C. to 150° C. 
     
     
         21 . The method of  claim 11 , wherein a), b) and c) are performed when the substrate is maintained at a predetermined pressure in a range from 900 hPa to 1100 hPa. 
     
     
         22 . The method of  claim 11 , wherein a), b) and c) are performed with the substrate arranged on a rotary chuck of a device. 
     
     
         23 . The method of  claim 11 , wherein the gas mixture is delivered from one or more nozzles located in a vapor containment cavity recessed in a substrate-facing surface of a vapor containment head.