Laminate, release agent composition, and method for manufacturing processed semiconductor substrate

Abstract

A laminate containing: a semiconductor substrate; a light-transmissive support substrate; and an adhesive layer and a release layer that are provided between the semiconductor substrate and the support substrate, wherein the release layer absorbs light emitted from a side of the support substrate and then is used for release the semiconductor substrate and the support substrate, the release layer is a layer formed of a release agent composition, and the release agent composition contains: a compound that has a structure for absorbing the light, contributes to easy release of the semiconductor substrate and the support substrate by absorbing the light, and contains at least one hydroxy group; and an organosiloxane polymer.

1 . A laminate comprising:
 a semiconductor substrate;   a light-transmissive support substrate; and   an adhesive layer and a release layer that are provided between the semiconductor substrate and the support substrate,   wherein the release layer absorbs light emitted from a side of the support substrate and then is used for release the semiconductor substrate and the support substrate,   the release layer is a layer formed of a release agent composition, and   the release agent composition contains: a compound that has a structure for absorbing the light, contributes to easy release of the semiconductor substrate and the support substrate by absorbing the light, and contains at least one hydroxy group; and an organosiloxane polymer.   
     
     
         2 . The laminate according to  claim 1 , wherein the compound has a structure having two or more aromatic rings constituting an electron conjugated system. 
     
     
         3 . The laminate according to  claim 2 , wherein the structure has a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, an anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, and a phenylbenzotriazole structure. 
     
     
         4 . The laminate according to  claim 1 , wherein the compound is a compound represented by any one of the following Formulas (1) to (7): 
       
         
           
           
               
               
           
         
         (in Formulas (1) to (7), R 1  to R 13  each independently represent a halogen atom or a monovalent group, 
         X represents a single bond, —O—, —CO—, —NR 31 — (R 31  represents a hydrogen atom, an alkyl group which may be substituted, or an aryl group which may be substituted), —SO—, —SO 2 —, or —N═N—, 
         Y 1  represents a single bond or —CO—, when Y 1  is a single bond, Y 2  represents —O—, —CO—, or —NR 32 — (R 32  represents a hydrogen atom, an alkyl group which may be substituted, or an aryl group which may be substituted), and when Y 1  is —CO—, Y 2  represents —CO—, 
         n1 is an integer of 0 to 5, 
         n2 is an integer of 0 to 5, 
         n3 is an integer of 0 to 4, 
         n4 is an integer of 0 to 4, 
         n5 is an integer of 0 to 5, 
         n6 is an integer of 0 to 5, 
         n7 is an integer of 0 to 4, 
         n8 is an integer of 0 to 4, 
         n9 is an integer of 0 to 8, 
         n10 is an integer of 0 to 10, 
         n11 is an integer of 0 to 10, 
         n12 is an integer of 0 to 4, 
         n13 is an integer of 0 to 5, 
         where each of Formulas (1) to (7) contains at least one hydroxy group, 
         * represents a bond, and 
         when there are a plurality of R 1 s to R 13 s, the plurality of R 1 s to R 13 s may be the same as or different from each other). 
       
     
     
         5 . The laminate according to  claim 1 , wherein the organosiloxane polymer contains at least one selected from the group consisting of a siloxane unit (Q unit) represented by SiO 2 , a siloxane unit (M unit) represented by R 101 R 102 R 103 SiO 1/2 , a siloxane unit (D unit) represented by R 104 R 105 SiO 2/2 , and a siloxane unit (T unit) represented by R 106 SiO 3/2 (R 101  to R 106  each independently represent a hydrogen atom or monovalent group bonded to Si). 
     
     
         6 . The laminate according to  claim 1 , wherein the adhesive layer is a layer formed of an adhesive composition containing a compound having a siloxane structure. 
     
     
         7 . The laminate according to  claim 6 , wherein the adhesive composition contains a component (A) which is cured. 
     
     
         8 . The laminate according to  claim 7 , wherein the component (A) is a component which is cured by a hydrosilylation reaction. 
     
     
         9 . The laminate according to  claim 7 , wherein the component (A) contains:
 a polyorganosiloxane (a1) containing an alkenyl group having 2 to 40 carbon atoms bonded to silicon atoms;   a polyorganosiloxane (a2) containing a Si—H group; and   a platinum group metal-based catalyst (A2).   
     
     
         10 . A release agent composition for forming a release layer of a laminate including a semiconductor substrate, a support substrate, and an adhesive layer and a release layer that are provided between the semiconductor substrate and the support substrate, the release agent composition being used for release the semiconductor substrate and the support substrate after the release layer absorbs light emitted from a side of the support substrate,
 the release agent composition comprising: a compound that has a structure for absorbing the light, contributes to easy release of the semiconductor substrate and the support substrate by absorbing the light, and contains at least one hydroxy group; and an organosiloxane polymer.   
     
     
         11 . The release agent composition according to  claim 10 , wherein the compound has a structure having two or more aromatic rings constituting an electron conjugated system. 
     
     
         12 . The release agent composition according to  claim 11 , wherein the structure has a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, an anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, and a phenylbenzotriazole structure. 
     
     
         13 . A release agent composition comprising: a compound that has a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, an anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, and a phenylbenzotriazole structure and contains at least one hydroxy group; and an organosiloxane polymer. 
     
     
         14 . The release agent composition according to  claim 10 , wherein the compound is a compound represented by any one of the following Formulas (1) to (7): 
       
         
           
           
               
               
           
         
         (in Formulas (1) to (7), R 1  to R 13  each independently represent a halogen atom or a monovalent group, 
         X represents a single bond, —O—, —CO—, —NR 31 — (R 31  represents a hydrogen atom, an alkyl group which may be substituted, or an aryl group which may be substituted), —SO—, —SO 2 —, or —N═N—, 
         Y 1  represents a single bond or —CO—, when Y 1  is a single bond, Y 2  represents —O—, —CO—, or —NR 32 — (R 32  represents a hydrogen atom, an alkyl group which may be substituted, or an aryl group which may be substituted), and when Y 1  is —CO—, Y 2  represents —CO—, 
         n1 is an integer of 0 to 5, 
         n2 is an integer of 0 to 5, 
         n3 is an integer of 0 to 4, 
         n4 is an integer of 0 to 4, 
         n5 is an integer of 0 to 5, 
         n6 is an integer of 0 to 5, 
         n7 is an integer of 0 to 4, 
         n8 is an integer of 0 to 4, 
         n9 is an integer of 0 to 8, 
         n10 is an integer of 0 to 10, 
         n11 is an integer of 0 to 10, 
         n12 is an integer of 0 to 4, 
         n13 is an integer of 0 to 5, 
         where each of Formulas (1) to (7) contains at least one hydroxy group, 
         * represents a bond, and 
         when there are a plurality of R 1 s to R 13 s, the plurality of R 1 s to R 13 s may be the same as or different from each other). 
       
     
     
         15 . The release agent composition according to  claim 10 , wherein the organosiloxane polymer contains at least one selected from the group consisting of a siloxane unit (Q unit) represented by SiO 2 , a siloxane unit (M unit) represented by R 101 R 102 R 103 SiO 1/2 , a siloxane unit (D unit) represented by R 104 R 105 SiO 2/2 , and a siloxane unit (T unit) represented by R 106 SiO 3/2 (R 101  to R 106  each independently represent a hydrogen atom or monovalent group bonded to Si). 
     
     
         16 . A method for manufacturing a processed semiconductor substrate, the method comprising:
 processing the semiconductor substrate of the laminate according to  claim 1 ;   separating the processed semiconductor substrate and the support substrate; and   cleaning the separated semiconductor substrate with a cleaning agent composition.   
     
     
         17 . The method for manufacturing a processed semiconductor substrate according to  claim 16 , wherein the separating the processed semiconductor substrate and the support substrate includes irradiating the release layer with light. 
     
     
         18 . The method for manufacturing a processed semiconductor substrate according to  claim 16 , wherein the cleaning agent composition is a cleaning agent composition containing a quaternary ammonium salt and a solvent. 
     
     
         19 . The method for manufacturing a processed semiconductor substrate according to  claim 18 , wherein the quaternary ammonium salt is a halogen-containing quaternary ammonium salt. 
     
     
         20 . The method for manufacturing a processed semiconductor substrate according to  claim 19 , wherein the halogen-containing quaternary ammonium salt is a fluorine-containing quaternary ammonium salt.