Mitigation of saddle deformation of substrates using film deposition and edge ion implantation

Abstract

Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate. The techniques include obtaining, using optical inspection data, a profile of the out-of-plane deformation of the substrate and identifying, using the obtained profile, one or more parameters characterizing a saddle-shaped stress of the substrate. The techniques further include computing, using the one or more identified parameters, one or more characteristics of a stress-compensation layer (SCL) for the substrate and causing the SCL to be deposited on the substrate. The techniques further include causing a stress-mitigation beam to be applied to a plurality of edge regions of the SCL, wherein settings of the stress-mitigation beam are determined using the one or more identified parameters.

What is claimed is: 
     
         1 . A method to correct an out-of-plane deformation of a substrate, the method comprising:
 obtaining, using optical inspection data, a profile of the out-of-plane deformation of the substrate;   identifying, using the obtained profile, one or more parameters characterizing a saddle-shaped stress of the substrate;   computing, using the one or more identified parameters, one or more characteristics of a stress-compensation layer (SCL) for the substrate;   causing the SCL to be deposited on the substrate; and   causing a stress-mitigation beam to be applied to a plurality of edge regions of the SCL, wherein settings of the stress-mitigation beam are determined using the one or more identified parameters.   
     
     
         2 . The method of  claim 1 , wherein the one or more characteristics of the SCL are computed to cause a stress in the substrate to have a same sign throughout an area of the substrate. 
     
     
         3 . The method of  claim 1 , wherein each of the plurality of edge regions of the SCL has a width that is at or below 30% of a diameter of the substrate. 
     
     
         4 . The method of  claim 1 , wherein the stress-mitigation beam applies a spatially uniform dose of ions to the plurality of edge regions of the SCL. 
     
     
         5 . The method of  claim 1 , wherein the stress-mitigation beam applies a radially-varying dose of ions to the plurality of edge regions of the substrate. 
     
     
         6 . The method of  claim 1 , wherein the stress-mitigation beam applies an azimuthally-varying dose of ions to the plurality of edge regions of the SCL to. 
     
     
         7 . The method of  claim 1 , wherein the one or more characteristics of the SCL comprise one or more of:
 a material of the SCL, or   a thickness of the SCL.   
     
     
         8 . The method of  claim 1 , wherein settings of the stress-mitigation beam comprise one or more of:
 a type of particles of the stress-mitigation beam,   an energy of the particles of the stress-mitigation beam, or   an angle of incidence of the particles of the stress-mitigation beam on the SCL.   
     
     
         9 . The method of  claim 1 , further comprising:
 responsive to the stress-mitigation beam being applied to the plurality of edge regions of the SCL, obtaining an updated profile of the out-of-plane deformation of the substrate;   identifying, based on the updated profile, a residual stress in the substrate;   selecting, based on the residual stress, a target stress-mitigation beam pattern from a plurality of stored stress-mitigation beam patterns; and   causing an additional stress-mitigation beam to be applied to a plurality of regions of the SCL identified by the target stress-mitigation beam pattern.   
     
     
         10 . The method of  claim 9 , wherein selecting the stress-mitigation beam pattern comprises computing a similarity of the residual stress in the substrate to each of at least a subset of the plurality of stored stress-mitigation beam patterns. 
     
     
         11 . The method of  claim 1 , wherein the substrate comprises a front side and a back side, wherein the front side comprises one or more manufactured features, and wherein the SCL is deposited on the back side of the substrate. 
     
     
         12 . A system comprising:
 a memory; and   a processing device communicatively coupled to the memory, the processing device to:
 obtain, using optical inspection data, a profile of an out-of-plane deformation of a substrate; 
 identify, using the obtained profile, one or more parameters characterizing a saddle-shaped stress of the substrate; 
 compute, using the one or more identified parameters, one or more characteristics of a stress-compensation layer (SCL) for the substrate; 
 cause the SCL to be deposited on the substrate; and 
 cause a stress-mitigation beam to be applied to a plurality of edge regions of the SCL, wherein settings of the stress-mitigation beam are determined using the one or more identified parameters. 
   
     
     
         13 . The system of  claim 12 , wherein the one or more characteristics of the SCL are computed to cause a stress in the substrate to have a same sign throughout an area of the substrate. 
     
     
         14 . The system of  claim 12 , wherein each of the plurality of edge regions of the SCL has a width that is at or below 30% of a diameter of the substrate. 
     
     
         15 . The system of  claim 12 , wherein the stress-mitigation beam applies at least one of:
 a spatially uniform dose of ions to the plurality of edge regions of the SCL,   a radially-varying dose of ions to the plurality of edge regions of the substrate, or   an azimuthally-varying dose of ions to the plurality of edge regions of the SCL to.   
     
     
         16 . The system of  claim 12 , wherein the one or more characteristics of the SCL comprise one or more of:
 a material of the SCL, or   a thickness of the SCL.   
     
     
         17 . The system of  claim 12 , wherein settings of the stress-mitigation beam comprise one or more of:
 a type of particles of the stress-mitigation beam,   an energy of the particles of the stress-mitigation beam, or   an angle of incidence of the particles of the stress-mitigation beam on the SCL.   
     
     
         18 . The system of  claim 12 , wherein the processing device is further to:
 responsive to the stress-mitigation beam being applied to the plurality of edge regions of the SCL, obtain an updated profile of the out-of-plane deformation of the substrate;   identify, based on the updated profile, a residual stress in the substrate;   select, based on the residual stress, a target stress-mitigation beam pattern from a plurality of stored stress-mitigation beam patterns; and   cause an additional stress-mitigation beam to be applied to a plurality of regions of the SCL identified by the target stress-mitigation beam pattern.   
     
     
         19 . The system of  claim 18 , wherein to select the stress-mitigation beam pattern, the processing device is to compute a similarity of the residual stress in the substrate to each of at least a subset of the plurality of stored stress-mitigation beam patterns. 
     
     
         20 . A semiconductor manufacturing system comprising:
 one or more processing chambers to process a substrate; and   a computing device to:
 obtain, using optical inspection data, a profile of an out-of-plane deformation of the substrate; 
 identify, using the obtained profile, one or more parameters characterizing a saddle-shaped stress of the substrate; 
 compute, using the one or more identified parameters, one or more characteristics of a stress-compensation layer (SCL) for the substrate; 
 cause the SCL to be deposited on the substrate; and 
 cause a stress-mitigation beam to be applied to a plurality of edge regions of the SCL, wherein settings of the stress-mitigation beam are determined using the one or more identified parameters.