Additive-containing silicon-containing resist underlayer film forming composition

Abstract

A silicon-containing resist underlayer film forming composition that includes a hydrolysis condensate of a hydrolyzable silane represented by Formula (1) or a hydrolyzable silane mixture containing a hydrolyzable silane represented by Formula (2) is the silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution.

1 . A silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution, the composition comprising: a hydrolysis condensate of a hydrolyzable silane mixture containing at least one of a hydrolyzable silane represented by Formula (1) below and a hydrolyzable silane represented by Formula (2) below:
   R 1   a R 2   b Si(R 3 ) 4 —( a+b )  (1)
   (In Formula (1),   R 1  is a group bonded to a silicon atom, and represents an organic group containing a succinic anhydride skeleton,   R 2  is a group bonded to a silicon atom, and independently of one another represents an optionally substituted alkyl group, an optionally substituted halogenated alkyl group, an optionally substituted alkoxyalkyl group, or an organic group containing an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, an alkoxy group, a sulfonyl group, or a cyano group, or a combination of these,   R 3  is a group or atom bonded to the silicon atom, and independently of one another represents an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom, and   a represents 1, b represents an integer of 0 to 2, and 4-(a+b) represents an integer of 1 to 3)
   R 4   a R 5   b Si(R 6 ) 4 —( a+b )  (2)
 
   (In Formula (2),   R 4  is a group which is bonded to a silicon atom and represents a monovalent group represented by Formula (2-1) below, and   
       
         
           
           
               
               
           
         
         (In Formula (2-1), 
         R 201  to R 202  each independently represent a hydrogen atom or an organic group containing an optionally substituted alkyl group, R 203  represents an optionally substituted alkylene group, and * represents a bond bonded to a silicon atom) 
         R 5  is a group bonded to a silicon atom, and independently of one another represents an optionally substituted alkyl group, an optionally substituted halogenated alkyl group, an optionally substituted alkoxyalkyl group, or an organic group containing an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, an alkoxy group, a sulfonyl group, or a cyano group, or any combination of these, 
         R 6  is a group or atom bonded to the silicon atom, and each independently represents an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom, and 
         a represents 1, b represents an integer of 0 to 2, and 4-(a+b) represents an integer of 1 to 3.) 
       
     
     
         2 . The silicon-containing resist underlayer film forming composition according to  claim 1 , further comprising: a compound A having a chemical structure containing a cation AX +  and an anion AZ − , the anion having a molecular weight of 65 or more. 
     
     
         3 . The silicon-containing resist underlayer film forming composition according to  claim 2 , wherein the anion AZ −  is at least one anion selected from the group consisting of anions represented by the following (A) to (E): 
       
         
           
           
               
               
           
         
         (In Formulae (A) to (E), 
         R 301  represents an optionally substituted alkyl group, an optionally substituted aryl group, an optionally substituted halogenated alkyl group, an optionally substituted aralkyl group, or an organic group containing an ester bond (—C(═O)—O— or —O—C(═O)—), or a combination of these, 
         Z represents an aromatic ring, a cyclic alkane, or a cyclic alkene with a non-aromatic ring, 
         R 501  represents an alkyl group in which some or all of the alkyl group may be substituted with a fluorine atom, 
         R 302  and R 303  each independently represent an alkyl group, and 
         R 304  and R 305  each independently represent an alkyl group.) 
       
     
     
         4 . The silicon-containing resist underlayer film forming composition according to  claim 1 , wherein the hydrolyzable silane mixture further contains a hydrolyzable silane represented by Formula (3) below:
   R 7   a R 8   b Si(R 9 ) 4 —( a+b )  (3)
   (In Formula (3),   R 7  is a group bonded to a silicon atom, and represents an organic group containing an alkenyl group,   R 8  is a group bonded to a silicon atom, and independently of one another represents an optionally substituted alkyl group, an optionally substituted halogenated alkyl group or an optionally substituted alkoxyalkyl group, or represents an organic group containing an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, an alkoxy group, a sulfonyl group, or a cyano group, or a combination of these,   R 9  is a group or atom bonded to a silicon atom, and independently of one another represents an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom, and   a represents 1, b represents an integer of 0 to 2, and 4-(a+b) represents an integer of 1 to 3.)   
     
     
         5 . The silicon-containing resist underlayer film forming composition according to  claim 4 , wherein the hydrolyzable silane mixture further contains a hydrolyzable silane represented by Formula (4) below:
   Si(R 10 ) 4   (4)
   (In Formula (4),   R 10  is a group or atom bonded to a silicon atom, and independently of one another represents an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom.)   
     
     
         6 . A silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution, the composition comprising:
 a compound A having a chemical structure containing a cation AX +  and an anion AZ − , the anion having a molecular weight of 65 or more.   
     
     
         7 . The silicon-containing resist underlayer film forming composition according to  claim 6 , wherein the anion AZ −  is at least one anion selected from the group consisting of anions represented by the following (A) to (E): 
       
         
           
           
               
               
           
         
         (In Formulae (A) to (E), 
         R 301  represents an optionally substituted alkyl group, an optionally substituted aryl group, an optionally substituted halogenated alkyl group, an optionally substituted aralkyl group, or an organic group containing an ester bond (—C(═O)—O— or —O—C(═O)—), or a combination of these, 
         Z represents an aromatic ring, a cyclic alkane, or a cyclic alkene with a non-aromatic ring, 
         R 501  represents an alkyl group in which some or all of the alkyl group may be substituted with a fluorine atom, 
         R 302  and R 303  each independently represent an alkyl group, and 
         R 304  and R 305  each independently represent an alkyl group.) 
       
     
     
         8 . A silicon-containing resist underlayer film formed using the resist underlayer film forming composition according to  claim 1 . 
     
     
         9 . A pattern forming method comprising:
 a process of forming an organic underlayer film on a semiconductor substrate;   a process of forming a silicon-containing resist underlayer film by applying the resist underlayer film forming composition according to  claim 1  on the organic underlayer film and firing the composition;   a process of forming a resist film by applying a resist film forming composition on the silicon-containing resist underlayer film;   a process of obtaining a resist pattern by exposing and developing the resist film;   a process of etching the silicon-containing resist underlayer film using a resist pattern as a mask; and   a process of etching the organic underlayer film using the patterned silicon-containing resist underlayer film as a mask.   
     
     
         10 . The pattern forming method according to  claim 9 , further comprising: a process of removing a silicon-containing resist underlayer film by a wet method using a chemical solution after the process of etching the organic underlayer film. 
     
     
         11 . The pattern forming method according to  claim 10 , wherein the chemical solution is a basic chemical solution. 
     
     
         12 . A silicon-containing resist underlayer film formed using the resist underlayer film forming composition according to  claim 6 . 
     
     
         13 . A pattern forming method comprising:
 a process of forming an organic underlayer film on a semiconductor substrate;   a process of forming a silicon-containing resist underlayer film by applying the resist underlayer film forming composition according to  claim 6  on the organic underlayer film and firing the composition;   a process of forming a resist film by applying a resist film forming composition on the silicon-containing resist underlayer film;   a process of obtaining a resist pattern by exposing and developing the resist film;   a process of etching the silicon-containing resist underlayer film using a resist pattern as a mask; and   a process of etching the organic underlayer film using the patterned silicon-containing resist underlayer film as a mask.   
     
     
         14 . The pattern forming method according to  claim 13 , further comprising: a process of removing a silicon-containing resist underlayer film by a wet method using a chemical solution after the process of etching the organic underlayer film. 
     
     
         15 . The pattern forming method according to  claim 14 , wherein the chemical solution is a basic chemical solution.