Method for etching a pattern

Abstract

A photoresist layer having a prescribed pattern is formed on a substrate to be etched. The substrate is immersed into a predetermined solution to form a layer on the substrate except on those portions where the photoresist layer is formed. The photoresist layer is removed, and the substrate is etched using the remaining layer as a mask.

What is claimed is: 
     
       1. A method for forming a prescribed pattern, comprising the steps of: preparing a substrate having a first main surface configured with a recessed portion;   forming a first layer covering the first main surface including the recessed portion;   forming a second layer on the first layer;   selectively removing the second layer to form a first patterned layer;   immersing the substrate having the first patterned layer into a predetermined solution to form a third layer selectively on the exposed portions of the first layer;   removing the first patterned layer; and   etching the first layer using the third layer as a mask.   
     
     
       2. A method for forming a prescribed pattern, comprising the steps of: preparing a substrate having a first main surface;   forming a first layer on the first main surface, said first layer being a metal layer;   forming a second layer on the first layer, said second layer being a photoresist layer;   selectively removing the second layer to form a first patterned layer;   immersing the substrate having the first patterned layer into a predetermined solution to form a third layer selectively on the exposed portions of the first layer, said third layer being a glass layer;   removing the first pattern layer; and etching the first layer using the third layer as a mask.   
     
     
       3. The method according to claim 2, wherein the third layer is formed by a Spin on Glass method. 
     
     
       4. The method according to claim 1, further comprising a step of forming a fourth layer over the layer before the formation of the second layer, and etching the fourth layer using the third layer as a mask. 
     
     
       5. The method according to claim 1, wherein the second layer is formed of hydrophilic material, and comprises a step of converting the second layer to a hydrophobic material before the immersion of the substrate. 
     
     
       6. A method for forming a prescribed pattern, comprising the steps of: preparing a semiconductor substrate having a first main surface;   forming a first layer on the first main surface said first layer being a hydrophilic material;   selectively removing the first layer to form a first patterned layer;   converting the first patterned layer into a hydrophobic material;   immersing the substrate having the first patterned layer into p predetermined solution to form a second layer selectively on those portions of the first main surface where the first layer has been removed;   removing the first patterned layer; and   etching the substrate using the second layer as a mask.   
     
     
       7. A method for forming a prescribed pattern, comprising the steps of: preparing a substrate having a first main surface;   forming a first layer on the first main surface;   forming a second layer on the first layer;   forming a third layer on the second layer;   selectively removing the third layer to form a first patterned layer;   immersing the substrate having the first patterned layer into a predetermined solution to form a fourth layer selectively on the exposed portion of the second layer;   removing the first patterned layer;   etching the second layer using the fourth layer as a mask; and   oxidizing the substrate to convert the first layer into an oxidized layer, using the fourth layer as a mask.