Immersion cooling coolant

Abstract

A coolant for cooling a semiconductor element by direct immersion, cooling, which has an improved cooling capability, is disclosed. The coolant comprises a low boiling point fluorocarbon having a boiling point of 30° C. to 100° C. and a high boiling point fluorocarbon having a boiling point higher than that of the low boiling point fluorocarbon by at least 100° C.; an amount of the high boiling point fluorocarbon being less than 20% by volume, based on the volume of the low boiling point fluorocarbon.

What is claimed is:  
     
       1. A coolant for cooling a semiconductor element by direct immersion cooling, used at a temperature in a range of room temperature to 80° C., consisting of a low boiling point fluorocarbon and a high boiling point fluorocarbon, the low boiling point fluorocarbon having a boiling point of 30° C. to 100° C. and the high boiling point fluorocarbon having a boiling point higher than that of the low boiling point fluorocarbon by at least 100° C., an amount of the high boiling point fluorocarbon being from 1.5% by volume to 20% by volume based on the volume of the low boiling point fluorocarbon, wherein the high boiling point fluorocarbon is selected from the group consisting of tris (perfluorohexyl) amine, tris (perfluoropentyl) amine, and                    
     
     
       2. A coolant according to claim  1  wherein said high boiling point fluorocarbon is tris(perfluoropenthyl)amine. 
     
     
       3. A coolant according to claim  1  wherein said low boiling point fluorocarbon has a boiling point of 30 to 56° C. and said high boiling point fluorocarbon has a boiling point of 215 to 253° C. 
     
     
       4. A coolant according to claim  1  wherein said low boiling point fluorocarbon is selected from the group consisting of C 5 F 12  and C 6 F 14 . 
     
     
       5. A coolant according to claim  1  wherein said high boiling point fluorocarbon is contained in an amount of less than 9% by volume, based on the volume of the low boiling point fluorocarbon. 
     
     
       6. A coling a semiconductor element by direct immersion cooling, used at a temperature in a range of room temperature to 80° C., consisting of a low boiling point fluorocarbon and a high boiling point fluorocarbon, the low boiling point fluorocarbon having a boiling point of 30° C. to 100° C. and the high boiling point fluorocarbon having a boiling point higher than that of the low boiling point fluorocarbon by at least 100° C., and an amount of the high boiling point fluorocarbon being from 15% by volume to 20% by volume based on the volume of the low boiling point fluorocarbon.