US6234870B1ExpiredUtilityPatentIndex 99
Serial intelligent electro-chemical-mechanical wafer processor
Est. expiryAug 24, 2019(expired)· nominal 20-yr term from priority
B24B 37/345B23H 5/08B24B 27/0076B24B 37/046B24B 49/04
99
PatentIndex Score
192
Cited by
19
References
37
Claims
Abstract
An apparatus for removing material from a substrate including a plurality of polishing cells. A first polishing cell detects the material on the substrate and performs a first polishing operation for removing material from the substrate. The first polishing cell includes at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate. A second polishing cell includes at least one polishing tool for completing the polishing process.
Claims
exact text as granted — not AI-modifiedI claim:
1. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the first polishing cell further comprises a processor for determining composition of a first polishing slurry; and
wherein the first polishing cell comprises three polishing tools mounted on a rotating turret.
2. The apparatus according to claim 1 , wherein the polishing tools include a high speed electropolishing head, a high rate polishing head, and a variable pressure head.
3. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the material on the substrate to be removed is at least one metal or alloy and the first polishing cell polishes the at least one metal or alloy to within the vicinity of a barrier layer.
4. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the first polishing station comprises an electroetching head comprising at least one segmented cathode.
5. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the at least one polishing tool of the first polishing cell comprises a plurality of polishing heads comprising a plurality of polishing pads.
6. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the first polishing cell further comprises means for introducing at least one of at least one polishing slurry for polishing the substrate and deionized water; and
wherein the first polishing cell further comprises at least one injector for introducing at least one of oxygen, carbon dioxide, and nitrogen into the at least one polishing slurry.
7. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the second polishing cell further comprises at least one pattern comparer for comparing a pattern of the material exposed by the polishing with a known pattern.
8. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
further comprising a recovery loop for recovering material removed from the substrate.
9. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the second polishing cell further comprises a mapping inspection station including a dynamic feedback loop.
10. The apparatus according to claim 9 , wherein the inspection station comprises a diode array for scanning a surface of the substrate recording coordinates on the substrate of locations with metal residues.
11. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the second polishing cell further comprises at least one brush tool.
12. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein the second polishing cell further comprises at least one polishing head comprising at least one polishing pad for locally removing material from the substrate; and
wherein the second polishing cell comprises a turret and four polishing heads arranged on the turret, the four polishing heads including a high rate polishing head, an intermediate rate polishing head, a touch up finishing head and a polishing head sufficiently small to permit localized polishing of the substrate.
13. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
and said apparatus further comprising:
an in situ slurry formulator for formulating slurries based upon material removal rates.
14. The apparatus according to claim 13 , wherein the slurries are formulated from three master batches.
15. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
and said apparatus further comprising a slurry heater for controlling temperature of polishing slurries for optimally polishing the substrate.
16. The apparatus according to claim 15 , wherein the heater is an infrared heater.
17. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
and said apparatus further comprising a slurry chiller for controlling temperature of polishing slurries for polishing the substrate.
18. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
and said apparatus further comprising a slurry chiller for controlling temperature of polishing slurries for polishing surface cleaning and passivation of the substrate;
wherein the first polishing cell further comprises means for introducing at least one of at least one polishing slurry for polishing the substrate and deionized water; and
wherein the first polishing cell further comprises at least one injector for introducing at least one of oxygen, carbon dioxide, and nitrogen into the at least one polishing slurry.
19. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate;
a second polishing cell comprising at least one polishing tool for completing the polishing process; and
a third polishing cell comprising at least one cleaner for cleaning the substrate;
wherein the third polishing cell carries out at least one of slurry removal and metal passivation treatment.
20. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate;
a second polishing cell comprising at least one polishing tool for completing the polishing process; and
a third polishing cell comprising at least one cleaner for cleaning the substrate; and
wherein the third polishing cell further comprises a scanning laser holography tool for detecting an end point to the cleaning.
21. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate;
a second polishing cell comprising at least one polishing tool for completing the polishing process; and
a third polishing cell comprising at least one cleaner for cleaning the substrate; and
wherein the third polishing cell comprises three brush cleaners.
22. An apparatus for removing material from a substrate, comprising:
a plurality of polishing cells comprising:
a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate and at least one polishing tool for removing material from the substrate; and
a second polishing cell comprising at least one polishing tool for completing the polishing process;
wherein at least one of the polishing cells comprises a polishing head that includes at least one edge electroetching element for electroetching an edge portion of the substrate.
23. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation; and
completing the polishing operation;
wherein the first polishing cell is carried out with at least one of three polishing tools mounted on a rotating turret in the first polishing cell, the three polishing tools including a high speed electropolishing head, a high rate polishing head, and a variable pressure head.
24. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation; and
completing the polishing operation;
wherein the material on the substrate to be removed comprises at least one metal or alloy and the first polishing operation polishes the at least one metal or alloy to within the vicinity of a barrier layer.
25. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation;
determining a composition of the at least one polishing slurry for removing the material from the substrate; and
introducing at least one of oxygen, carbon dioxide, and nitrogen into the at least one polishing slurry.
26. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation; and
comparing a pattern of the material exposed by the polishing to a known pattern with at least one pattern comparer included in the second polishing.
27. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation; and
recovering material removed from the substrate with a recovery loop.
28. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation; and
inspecting the material and the substrate with a mapping inspection station including a dynamic feedback loop included in the second polishing cell.
29. The method according to claim 28 , wherein inspecting the substrate and the material includes scanning a surface of the substrate with a diode array included in the inspection station and recording coordinates on the substrate of locations with metal residues.
30. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation; and
locally removing material from the substrate with at least one polishing head comprising at least one polishing pad included in the second polishing cell;
wherein completion of the polishing operation is carried out with second polishing cell comprising a turret and four polishing heads arranged on the turret, the four polishing heads including a high rate polishing head, an intermediate rate polishing head, a touch up finishing head and a polishing head sufficiently small to permit localized polishing of the substrate.
31. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation; and
formulating slurries in situ based upon material removal rates.
32. The method according to claim 31 , wherein the slurries are formulated from three master batches.
33. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation; and
heating the at least one polishing slurry with a slurry heater for controlling temperature of the at least one polishing slurry for optimally polishing the substrate.
34. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation; and
controlling temperature of the at least one polishing slurry with a slurry chiller.
35. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation;
wherein the apparatus further comprises a third polishing cell comprising at least one cleaner for cleaning the substrate; and
carrying out at least one of slurry removal and metal passivation treatment with the third polishing cell.
36. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing operation;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation;
wherein the apparatus further comprises a third polishing cell comprising at least one cleaner for cleaning the substrate; and
detecting an end point to the cleaning with a scanning laser holography tool included in the third polishing cell.
37. A method of removing material from a substrate, comprising:
arranging the substrate on an apparatus comprising a plurality of polishing cells including a first polishing cell for detecting the material on the substrate and performing a first polishing operation for removing material from the substrate, the first polishing cell comprising at least one sensor for characterizing the material on the substrate, and at least one polishing tool and at least one polishing slurry for removing material from the substrate and a second polishing cell comprising at least one polishing tool for completing the polishing process;
detecting the material on the substrate;
performing a first polishing operation;
completing the polishing operation; and
electroetching an edge portion of the substrate with a polishing head that includes at least one edge electroetching element included in at least one of the polishing cells.Cited by (0)
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