Integrated power oscillator RF source of plasma immersion ion implantation system

Abstract

A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber. An oscillator is operatively coupled to an antenna for igniting a plasma within the processing chamber. The plasma and antenna form a resonant circuit with the oscillator, and the oscillator varies an output characteristic associated therewith based on a load change in the resonant circuit during plasma ignition.

What is claimed is:  
     
       1. An RF plasma generator system, comprising: 
       an oscillator resonant circuit including an antenna for igniting and maintaining a plasma,  
       wherein the plasma and antenna are part of the oscillator resonant circuit and form an oscillator resonant circuit load, and  
       wherein an oscillator operating current, voltage and frequency automatically adapt to plasma conditions.  
     
     
       2. The system of claim  1 , wherein an allowable range of oscillator operating current, voltage and frequency covers a desired range of plasma conditions. 
     
     
       3. The system of claim  1 , wherein an active device within the oscillator comprises one or more vacuum tubes. 
     
     
       4. The system of claim  1 , wherein an active device within the oscillator comprises one or more semiconductor devices. 
     
     
       5. The system of claim  1 , wherein the oscillator resonant circuit comprises a Colpitt's style oscillator. 
     
     
       6. A processing system, comprising: 
       a wafer handling system for introducing semiconductor wafers into a processing chamber; and  
       an oscillator resonant circuit including an antenna for igniting and maintaining a plasma within the processing chamber,  
       wherein the plasma and antenna are part of the oscillator resonant circuit, and wherein an oscillator operating current, voltage and frequency automatically adapt to plasma conditions.  
     
     
       7. The system of claim  6 , wherein an allowable range of oscillator operating current, voltage and frequency covers a desired range of plasma conditions. 
     
     
       8. The system of claim  6 , wherein the system comprises an ion implantation system. 
     
     
       9. The system of claim  6 , wherein the system comprises an etching system. 
     
     
       10. The system of claim  6 , wherein the system comprises an ashing system. 
     
     
       11. The system of claim  6 , wherein an active device within the oscillator comprises one or more vacuum tubes. 
     
     
       12. The system of claim  6 , wherein an active device within the oscillator comprises one or more semiconductor devices. 
     
     
       13. The system of claim  6 , wherein the oscillator resonant circuit comprises a Colpitt's style oscillator. 
     
     
       14. An RF plasma generator system, comprising: 
       a plasma chamber;  
       an oscillator having first and second terminals; and  
       an oscillator resonant circuit comprising:  
       an antenna located in the plasma chamber and serially connected with a plasma in the resonant circuit for igniting and maintaining the plasma; and  
       a capacitance connected across the plasma and the antenna;  
       wherein the first and second terminals of the oscillator are connected across the capacitance, wherein the plasma and antenna form an oscillator resonant circuit load, and wherein an operating current, voltage and frequency associated with the oscillator automatically adapt to plasma conditions.  
     
     
       15. The system of claim  14 , wherein an allowable range of oscillator operating current, voltage, and frequency covers a desired range of plasma conditions. 
     
     
       16. The system of claim  14 , wherein the capacitance comprises a plurality of capacitors connected between the first and second terminals of the oscillator. 
     
     
       17. The system of claim  14 , wherein the first and second terminals of the oscillator are AC coupled connected across the capacitance via first and second coupling capacitors. 
     
     
       18. The system of claim  14 , wherein the oscillator comprises a vacuum tube with a grid element electrically connected to the second terminal of the oscillator, and wherein the resonant circuit provides positive feedback to the second terminal of the oscillator for modulation of the oscillator operating current, voltage, and frequency according to plasma conditions. 
     
     
       19. The system of claim  18 , wherein an allowable range of oscillator operating current, voltage, and frequency covers a desired range of plasma conditions.