Semiconductor device having a dual damascene interconnect spaced from a support structure

Abstract

A semiconductor device and an improved method for making it are described. The semiconductor device comprises a dual damascene interconnect that includes a conductive line. The device further includes a support structure that is spaced from the conductive line, and an insulating layer that is formed on the support structure and the conductive line. In the method for forming that device, a support structure is formed on a substrate, and an insulating layer is formed adjacent to it. Portions of the insulating layer are removed to form a via and a trench, which are filled with a conductive material to generate a dual damascene interconnect that includes a conductive line, wherein the conductive line is spaced from the support structure.

What is claimed is:  
     
       1. A semiconductor device comprising: 
       a first barrier layer that is formed on a substrate;  
       a first insulating layer that is formed on the first barrier layer;  
       a dual damascene interconnect that is formed on the first insulating layer, the dual damascene interconnect comprising a conductive line;  
       a support structure that is formed on the substrate, the support structure being spaced from the conductive line, wherein the space between the support structure and the conductive line is filled with a second insulating layer that has a dielectric constant that is lower than the dielectric constant of the support structure;  
       a hard mask that is formed on the second insulating layer; and  
       a second barrier layer that is formed on the hard mask.