Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme

Abstract

The opening is initially fabricated in an upper surface of a wafer substrate, which allows for the use of alignment features on the upper surface of the wafer substrate. The openings are then filled with plugs. An integrated circuit is then manufactured over the upper surface of the substrate and the plugs. The plugs are located below the integrated circuit and do not take up “real estate” reserved for metal layers of the integrated circuit. A carrier is then bonded to an upper surface of the integrated circuit, whereafter a lower portion of the wafer substrate is removed in a grinding and etching operation. The plugs are then removed through a lower surface of the wafer substrate, whereafter the openings are filled with conductive members in a plating operation. A metal redistribution layer can be formed on a lower surface of the wafer substrate, because the carrier provides sufficient rigidity.

1. A method of constructing art electronic assembly, comprising:
 forming a plurality of plugs in a first substrate;  
 manufacturing a first integrated circuit on a first side of the first substrate, the first substrate and the first integrated circuit jointly forming a first die;  
 removing the plugs to leave a plurality of openings in the first substrate;  
 forming a seed layer in each opening and as a contact on a second side of the first substrate opposing the first side;  
 plating a plurality of conductive members, each conductive member having a respective portion being plated on a portion of the seed layer in the respective opening to form a via in each respective opening and being plated on a contact of the respective seed layer on the second side of the first substrate to form a bump on each respective contact and standing proud of the substrate; and  
 locating the first die on a second component having a circuit, the first integrated circuit being connected through the material of the bump and the via of each conductive members to the circuit of the second component.  
 
     
     
       2. The method of  claim 1 , wherein the plugs are formed in a first surface of the first substrate and the first integrated circuit is manufactured on the first surface. 
     
     
       3. The method of  claim 2 , further comprising:
 removing a sacrificial portion of the first substrate opposing the first surface to leave the first substrate with a second surface opposing the first surface, the plugs being exposed by said removal and being removed through the second surface.  
 
     
     
       4. The method of  claim 3 , further comprising:
 bonding a side of the first die opposing the sacrificial portion that is removed to a carrier, the sacrificial portion being removed while the first die is bonded to the carrier.  
 
     
     
       5. The method of  claim 4 , wherein at least some of the sacrificial portion is removed in a grinding operation. 
     
     
       6. The method of  claim 5 , wherein some of the sacrificial portion is etched away. 
     
     
       7. The method of  claim 3 , further comprising:
 mounting the first die to a mount structure with the first die between the mount structure and the carrier; and  
 removing the carrier from the die after the die is mounted to the mount structure.  
 
     
     
       8. The method of  claim 7 , wherein the first die is part of a processed wafer, further comprising:
 singulating the first die from the wafer substrate after the carrier is removed.  
 
     
     
       9. The method of  claim 8 , further comprising:
 removing the die from the mount structure after the first die is singulated from the wafer.  
 
     
     
       10. The method of  claim 1 , wherein the conductive members are plated in the openings. 
     
     
       11. The method of  claim 10 , further comprising:
 depositing an oxide layer in each opening, the conductive members being formed over the oxide layers.  
 
     
     
       12. The method of  claim 11 ,
 wherein the seed layer is deposited on each oxide layer.  
 
     
     
       13. The method of  claim 1 , wherein the second component has a second substrate and the circuit of the second component is a second integrated circuit formed on the second substrate. 
     
     
       14. The method of  claim 13 , further comprising:
 forming a plurality of plugs in the second substrate;  
 removing the plugs from the second substrate; and  
 forming a conductive member in each opening in the second substrate.  
 
     
     
       15. The method of  claim 1 , wherein the conductive members are in at least a 3×3 array. 
     
     
       16. The method of  claim 1 , wherein each conductive member is located on a respective terminal of the second die. 
     
     
       17. The method of  claim 1 , wherein at least metallization layers of the first integrated circuit are manufactured after the plugs are formed. 
     
     
       18. The method of  claim 17 , wherein the plugs are removed after at least transistors of the first integrated circuit are manufactured. 
     
     
       19. A method of constructing an electronic assembly, comprising:
 forming a plurality of plugs in a first surface of a first substrate;  
 manufacturing a first integrated circuit on the first surface of the first substrate, the first substrate and the first integrated circuit jointly forming a first die;  
 removing a sacrificial portion of the first substrate opposing the first surface to leave the first substrate with a second surface opposing the first surface exposed by said removal;  
 removing the plugs through the second surface to leave a plurality of openings in the first substrate;  
 forming a conductive member in each opening; and  
 locating the first die on a second component having a circuit, the first integrated circuit being connected through the conductive members to the circuit of the second component.  
 
     
     
       20. The method of  claim 19 , further comprising:
 bonding a side of the first die opposing the sacrificial portion that is removed to a carrier, the sacrificial portion being removed while the first die is bonded to the carrier.  
 
     
     
       21. The method of  claim 20 , wherein at least some of the sacrificial portion is removed in a grinding operation. 
     
     
       22. The method of  claim 21 , wherein some of the sacrificial portion is etched away. 
     
     
       23. The method of  claim 19 , further comprising:
 mounting the first die to a mount structure with the first die between the mount structure and the carrier; and  
 removing the carrier from the die after the die is mounted to the mount structure.  
 
     
     
       24. The method of  claim 23 , wherein the first die is part of a processed wafer, further comprising:
 singulating the first die from the wafer substrate after the carrier is removed.  
 
     
     
       25. The method of  claim 24 , further comprising:
 removing the die from the mount structure after the first die is singulated from the wafer.  
 
     
     
       26. The method of  claim 19 , wherein the conductive members are plated in the openings. 
     
     
       27. The method of  claim 26 , further comprising:
 depositing an oxide layer in each opening, the conductive members being formed over the oxide layers.  
 
     
     
       28. The method of  claim 27 , further comprising:
 depositing a metal layer on each oxide layer, the conductive members being plated on the metal layer.  
 
     
     
       29. The method of  claim 19 , wherein the second component has a second substrate and the circuit of the second component is a second integrated circuit formed on the second substrate. 
     
     
       30. The method of  claim 29 , further comprising:
 forming a plurality of plugs in the second substrate;  
 removing the plugs from the second substrate; and  
 forming a conductive member in each opening in the second substrate.  
 
     
     
       31. The method of  claim 19 , wherein the conductive members are in at least a 3×3 array. 
     
     
       32. The method of  claim 19 , wherein each conductive member is located on a respective terminal of the second die. 
     
     
       33. The method of  claim 32 , wherein at least metallization layers of the first integrated circuit are manufactured after the plugs are formed. 
     
     
       34. The method of  claim 32 , wherein the plugs are removed after at least transistors of the first integrated circuit are manufactured.