Methods for marking a bare semiconductor die including applying a tape having energy-markable properties

Abstract

A method used for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multilevel laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electromagnetic radiation.

What is claimed is: 
     
       1. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
 providing the semiconductor die in wafer form; 
 applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die; 
 subsequently exposing at least a portion of the tape to optical energy; and 
 forming a mark on a portion of the semiconductor die. 
 
     
     
       2. The method of  claim 1 , wherein the semiconductor die comprises at least one integrated circuit semiconductor die. 
     
     
       3. The method of  claim 1 , wherein applying the tape to the at least a portion of the thinned surface of the semiconductor die includes applying the tape to an edge portion of the semiconductor die. 
     
     
       4. The method of  claim 3 , wherein exposing the at least a portion of the tape to optical energy includes exposing the tape on the edge portion of the semiconductor die. 
     
     
       5. The method of  claim 1 , wherein the optical energy-markable properties of the tape are embedded within the tape. 
     
     
       6. The method of  claim 1 , wherein the optical energy-markable properties of the tape comprise properties of at least one adhesive layer affixed to the tape. 
     
     
       7. The method of  claim 6 , wherein the at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof. 
     
     
       8. The method of  claim 6 , wherein the at least one adhesive layer is UV-sensitive. 
     
     
       9. The method of  claim 6 , wherein the at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between the tape and the first outermost layer. 
     
     
       10. The method of  claim 1 , further comprising:
 applying a second tape over at least a portion of a surface of the tape; and 
 exposing at least a portion of the second tape. 
 
     
     
       11. The method of  claim 10 , wherein the second tape is a carrier tape. 
     
     
       12. The method of  claim 11 , wherein the carrier tape includes a carrier tape having translucent properties. 
     
     
       13. The method of  claim 11 , wherein the second tape includes a tape having optical energy-markable properties. 
     
     
       14. The method of  claim 1 , wherein the tape comprises polytetrafluoroethylene tape. 
     
     
       15. The method of  claim 1 , wherein exposing the at least a portion of the tape to optical energy comprises exposing the at least a portion of the tape to one of an Nd:YAG laser (yttrium aluminum garnet), an Nd:YLP laser (pulsed ytterbium fiber), or a carbon dioxide laser. 
     
     
       16. The method of  claim 1 , wherein exposing the at least a portion of the tape to optical energy includes exposing the at least a portion of the tape to an ultraviolet light source. 
     
     
       17. The method of  claim 16 , wherein the tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon. 
     
     
       18. The method of  claim 1 , wherein the tape includes a tape having antistatic capacities. 
     
     
       19. The method of  claim 1 , wherein the tape includes a tape of a thermally dissipating material. 
     
     
       20. The method of  claim 1 , wherein the tape includes a tape having a coefficient of thermal expansion substantially similar to that of the semiconductor die. 
     
     
       21. The method of  claim 1 , wherein forming the mark includes one of heating, chemically reacting, or transferring materials comprising the tape. 
     
     
       22. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
 providing the semiconductor die in sliced wafer form; 
 applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die; 
 subsequently exposing at least a portion of the tape to optical energy; and 
 forming a mark on a portion of the semiconductor die. 
 
     
     
       23. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
 providing the semiconductor die as a portion of a wafer; 
 applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die; 
 subsequently exposing at least a portion of the tape to optical energy; and 
 forming a mark on a portion of the semiconductor die. 
 
     
     
       24. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
 providing the semiconductor die as a portion of a sliced wafer; 
 applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die; 
 subsequently exposing at least a portion of the tape to optical energy; and 
 forming a mark on a portion of the semiconductor die.