Method and apparatus for dynamic adjustment of a sampling plan based on wafer electrical test data

Abstract

The present invention provides a method and apparatus for dynamic adjustment of a sampling plan. The method includes accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool. The method also includes determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool.

1. A method, comprising:
 accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool, the wafer electrical test data having been acquired by testing said at least one workpiece using a wafer electrical test device; and 
 determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device other than the wafer electrical test device, said at least one measurement device being configured to measure at least one parameter associated with workpieces processed by the at least one processing tool. 
 
     
     
       2. The method of  claim 1 , wherein accessing the wafer electrical test data comprises accessing the wafer electrical test data from a memory. 
     
     
       3. The method of  claim 1 , wherein accessing the wafer electrical test data comprises accessing wafer electrical test data associated with at least one workpiece that has been processed by a plurality of processing tools in a process flow. 
     
     
       4. The method of  claim 1 , wherein determining the at least one sampling plan for the at least one measurement device comprises determining a parameter list indicative of the at least one parameter to be measured. 
     
     
       5. The method of  claim 4 , wherein determining the parameter list indicative of the at least one parameter to be measured comprises determining a parameter list including at least one of a layer thickness, a critical dimension, a profile, a wavelength, a defect density, an optical property, a layer resistivity, and a location on a workpiece. 
     
     
       6. The method of  claim 4 , wherein determining the parameter list indicative of the at least one parameter to be measured comprises modifying a previously determined parameter list. 
     
     
       7. The method of  claim 1 , wherein determining the at least one sampling plan for the at least one measurement device comprises determining at least one sampling plan for at least one of a sensor, an integrated metrology tool, and a stand-alone metrology tool. 
     
     
       8. The method of  claim 1 , further comprising measuring at least one parameter associated with the workpiece according to the sampling plan. 
     
     
       9. A method, comprising:
 accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool; and 
 determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool wherein determining the at least one sampling plan comprises modifying at least one previously determined sampling plan. 
 
     
     
       10. The method of  claim 9 , wherein determining the at least one sampling plan based on the wafer electrical test data comprises detecting a wafer electrical test failure. 
     
     
       11. The method of  claim 10 , wherein modifying the at least one sampling plan comprises modifying the at least one sampling plan in response to detecting the wafer electrical test failure. 
     
     
       12. The method of  claim 9 , wherein modifying the at least one sampling plan comprises at least one of adding a new measurement device to an active measurement device list and removing a measurement device from an active measurement device list. 
     
     
       13. A method, comprising:
 accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool; and 
 determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool wherein determining the at least one sampling plan comprises modifying at least one previously determined sampling plan, and wherein modifying the at least one sampling plan comprises increasing at least one of a sampling rate, a sampling percentage, a sampling resolution, a sampling area, and a sampling granularity. 
 
     
     
       14. A method, comprising:
 accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool; and 
 determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool wherein determining the at least one sampling plan comprises modifying at least one previously determined sampling plan, and wherein modifying the at least one sampling plan comprises decreasing at least one of a sampling rate, a sampling percentage, a sampling resolution, a sampling area, and a sampling granularity. 
 
     
     
       15. The method of  claim 9 , further comprising processing at least one workpiece substantially after modifying the sampling plan. 
     
     
       16. The method of  claim 15 , further comprising measuring, according to the modified sampling plan, at least one parameter associated with the at least one workpiece that was processed substantially after modifying the sampling plan.