Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor

Abstract

Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

1. Charged particle beam equipment comprising:
 a charged particle optical system to scan a focused charged particle beam on a sample in a predetermined loop time; 
 a control device configured to control the optical system; 
 a sample stage configured to mount the sample; 
 a spraying device configured to spray a deposition gas on the sample; 
 a display device configured to set a value of sputter depth on the sample caused by an irradiation of the charged particle beam; and 
 an estimating device configured to estimate a parameter for operating the charged particle optical system from the value of the sputter depth. 
 
   
   
     2. A charged particle beam apparatus provided with function of depositing a film on a sample by an irradiation of a charged particle beam and a supply of deposition gas, comprising:
 a charged particle beam optical system to irradiate focused charged particles; 
 a spraying device to spray the deposition gas; and 
 a control unit to calibrate a deposition rate of the film, 
 wherein said control unit controls the condition of the irradiation of the charged particle beam in accordance of a permissible value of depth of a hollow formed on a surface between the film and the sample. 
 
   
   
     3. A charged particle beam apparatus according to  claim 2 , wherein said control unit calibrates the deposition rate by adjusting a loop time of the charged particle beam. 
   
   
     4. A charged particle beam apparatus according to  claim 2 , wherein said control unit further comprises a user interface to display a condition of the irradiation of the charged particle beam. 
   
   
     5. A charged particle beam apparatus according to  claim 4 , wherein said user interface displays information for selecting a type of process, a material of the film, and a beam current. 
   
   
     6. A charged particle beam apparatus according to  claim 4 , wherein a plurality of conditions for depositing the film are stored in the control unit, and the conditions are displayed on the user interface for selecting an operator. 
   
   
     7. A charged particle beam apparatus provided with function of depositing a film on a sample by an irradiation of a charged particle beam and a supply of deposition gas, comprising:
 an optical system to irradiate focused charged particles; 
 a gas nozzle to supply the deposition gas; and 
 a control unit to control conditions of the irradiation of the charged particle beam, 
 wherein said control unit controls the condition of the irradiation of the charged particle beam in accordance of a permissible value of depth of a hollow formed on a surface between the film and the sample. 
 
   
   
     8. A charged particle beam apparatus provided with a function to prepare a specimen from a sample by utilizing a charged particle beam comprising:
 a charged particle beam optical system to irradiate a focused charged particle beam on the sample; 
 a spraying device to spray a deposition gas; 
 a mechanical probe to separate the specimen from the sample; and 
 a control unit to control conditions of the irradiation of the charged particle beam, 
 wherein said control unit estimates a deposition rate from a loop time dependence of the deposition rate of the deposition gas, and displays candidate values of the deposition rate for the selection of operator. 
 
   
   
     9. A charged particle beam apparatus according to  claim 8 , wherein said control unit controls the charged particle beam apparatus to:
 contact a tip of the mechanical probe to the specimen, 
 form a deposition film between a tip of the mechanical probe and the specimen by supplying the deposition gas to a region including the tip and irradiating the region with the charged particle beam, 
 remove the specimen from the sample by the mechanical probe, and 
 separate the mechanical probe from the specimen.