Light emitting diode package and process of making the same

Abstract

A light emitting diode (LED) package and process of making the same includes a silicon-on-insulator (SOI) substrate that is composed of two silicon based materials and an insulation layer interposed therebetween. The two silicon based materials of silicon-on-insulator substrate are etched to form a reflective cavity and an insulation trench, respectively, for dividing the silicon-on-insulator substrate into contact surfaces of positive and negative electrodes. A plurality of metal lines are then formed to electrically connect the two silicon based materials such that the LED chip can be mounted on the reflective cavity and electrically connected to the corresponding electrodes of the silicon-on-insulator substrate by the metal lines. Thus the properties of heat resistance and heat dispersal can be improved and the process can be simplified.

1. A light emitting diode (LED) package, comprising:
 a silicon-on-insulator substrate including a first silicon based material, a second silicon based material, and an insulation layer interposed therebetween, a cavity recessing from the first silicon based material, and at least one insulation trench dividing the silicon-on-insulator substrate into electrically-isolated segments of positive and negative-electrodes, 
 a plurality of metal lines formed on the silicon-on-insulator substrate; and 
 at least one LED chip, disposed in the cavity, wherein positive and negative electrodes of the LED chip are electrically connected to the metal lines. 
 
   
   
     2. The package of  claim 1  wherein the metal lines comprise a material which is selected from one group consisted of Ag, Au, Cu, Al, Pt, Pd, Cr, Ni and an alloy consisted of above elements. 
   
   
     3. The package of  claim 1  wherein the cavity is formed with an inclined plane. 
   
   
     4. The package of  claim 1  wherein the cavity is formed with a vertical plane. 
   
   
     5. The package of  claim 1  further comprising an encapsulating filling which covers and fills the cavity. 
   
   
     6. The package of  claim 5  wherein the encapsulating filling comprises an encapsulation epoxy. 
   
   
     7. The package of  claim 6  wherein the encapsulation epoxy forms at least one lens. 
   
   
     8. The package of  claim 1  further comprising a dielectric layer filled in the insulation trench. 
   
   
     9. The package of  claim 1  further comprises at least one electrically-conductive plug in the insulation trench. 
   
   
     10. The package of  claim 9 , wherein the LED chips connect to each other in serial, parallel, or parallel-serial connection through the electrically-conductive plug. 
   
   
     11. The package of  claim 1 , wherein the cavity comprising a first depth and a second depth. 
   
   
     12. The package of  claim 1  wherein the LED chip is a flip-chip type LED. 
   
   
     13. The package of  claim 1  wherein the first silicon based material has <100> crystalline direction. 
   
   
     14. The package of  claim 1  wherein the cavity is capable of reflecting the light generated from the LED chip. 
   
   
     15. A light emitting diode (LED) package, comprising:
 a silicon-on-insulator substrate including a first silicon based material, a second silicon based material, and an insulation layer interposed therebetween, a cavity recessing from the first silicon based material, at least one insulation trench dividing the silicon-on-insulator substrate into electrically-isolated segments of positive and negative electrodes, and a plurality of metal lines formed on the silicon-on-insulator substrate; 
 at least one LED chip, disposed in the cavity, wherein positive and negative electrodes of the LED chip are electrically connected to the metal lines, respectively; and 
 an encapsulating filling which covers and fills the cavity. 
 
   
   
     16. The package of  claim 15  wherein the encapsulating filling comprises an encapsulation epoxy. 
   
   
     17. The package of  claim 16  wherein the encapsulation epoxy forms at least one lens. 
   
   
     18. The package of  claim 15  wherein the cavity is formed with an inclined plane. 
   
   
     19. The package of  claim 15  wherein the cavity is formed with a vertical plane. 
   
   
     20. The package of  claim 15  further comprises at least one electrically-conductive plug in the insulation trench. 
   
   
     21. The package of  claim 20  wherein the LED chips connect to each other in serial, parallel, or parallel-serial connection via the electrically-conductive plug. 
   
   
     22. The package of  claim 15  wherein the cavity comprises a first depth and a second depth. 
   
   
     23. The package of  claim 15  wherein the LED chip is a flip-chip type LED. 
   
   
     24. The package of  claim 15  wherein the first silicon based material has <100> crystalline direction. 
   
   
     25. The package of  claim 15  wherein the cavity is capable of reflecting the light generated from the LED chip. 
   
   
     26. A light emitting diode (LED) package, comprising:
 a silicon-on-insulator substrate, comprising a first silicon based material, a second silicon based material, an insulation layer interposed therebetween, a cavity recessing from the first silicon based material, a plurality of insulation trenches dividing the silicon-on-insulator substrate into electrically-isolated segments of positive and negative electrodes, the insulation trenches being disposed with a dielectric layer, a plurality of metal lines formed on the silicon-on-insulator substrate; and 
 at least one LED chip, disposed in the cavity, wherein positive and negative electrodes of the LED chip electrically connect to the metal lines respectively. 
 
   
   
     27. The package of  claim 26  wherein the cavity is formed with an inclined plane. 
   
   
     28. The package of  claim 26  wherein the cavity is formed with a vertical plane. 
   
   
     29. The package of  claim 26  further comprising an encapsulating filling which covers and fills the cavity. 
   
   
     30. The package of  claim 29  wherein the encapsulating filling comprises an encapsulation epoxy. 
   
   
     31. The package of  claim 30  wherein the encapsulation epoxy forms at least one lens. 
   
   
     32. The package of  claim 26  further comprises at least one electrically-conductive plug in the insulation trenches. 
   
   
     33. The package of  claim 32  wherein the LED chips connect to each other in serial, parallel, or parallel-serial connection via the electrically-conductive plug. 
   
   
     34. The package of  claim 26  wherein the cavity comprising a first depth and a second depth. 
   
   
     35. The package of  claim 26  wherein the LED chip is a flip-chip type LED. 
   
   
     36. The package of  claim 26  wherein the first silicon based material has <100> crystalline direction. 
   
   
     37. The package of  claim 26  wherein the cavity is capable of reflecting the light. generated from the LED chip.