US8349627B2ActiveUtilityPatentIndex 51
Method for fabricating a light emitting diode package structure
Est. expiryMar 12, 2028(~1.7 yrs left)· nominal 20-yr term from priority
H10W 90/756H10W 90/736H10W 74/00H10W 72/07554H10W 72/01515H10W 72/884H10W 72/547H10W 72/075H10H 20/8581H10H 20/857H10H 20/856H10H 20/8506
51
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24
Claims
Abstract
The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.
Claims
exact text as granted — not AI-modified1. A method for fabricating a light emitting diode (LED) package structure, comprising:
providing a carrier having a substrate and a first protrusion, wherein the first protrusion is disposed on the substrate and has a recess; and
disposing an adhesion layer and a LED chip on a bottom of the recess,
wherein the adhesion layer is bonded between the carrier and the LED chip, a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap exists between a sidewall of the LED chip and an inner sidewall of the recess, and a portion of the adhesive layer is disposed in the gap.
2. The method as claimed in claim 1 , further comprising forming an optical material layer at least partially on an inner wall of the recess before disposing the adhesion layer and the LED chip on the bottom of the recess.
3. The method as claimed in claim 2 , wherein the optical material layer is optically reflective.
4. The method as claimed in claim 2 , wherein the optical material layer is optically absorptive.
5. The method as claimed in claim 1 , further comprising forming a fluorescent material layer in the recess.
6. The method as claimed in claim 1 , further comprising forming a second protrusion on the first protrusion, wherein the second protrusion having an opening connecting the recess.
7. The method as claimed in claim 6 , further comprising forming a optical material layer at least partially on an inner wall of the recess or the opening before disposing the adhesion layer and the LED chip on the bottom of the recess.
8. The method as claimed in claim 7 , wherein the optical material layer is optically reflective.
9. The method as claimed in claim 7 , wherein the optical material layer is optically absorptive.
10. The method as claimed in claim 6 , further comprising forming a transparent material layer in the recess.
11. The method as claimed in claim 10 , further comprising forming a fluorescent material layer in the opening.
12. The method as claimed in claim 1 , further comprising forming a first conductive structure and a second conductive structure extending at least partially along the bottom of the substrate and penetrating the substrate and the first protrusion.
13. The method as claimed in claim 12 , further comprising forming a second protrusion on the first protrusion, wherein the second protrusion having an opening connecting the recess.
14. The method as claimed in claim 1 , where the substrate and the first protrusion are integrally formed.
15. A method for fabricating a light emitting diode (LED) package structure, comprising:
providing a carrier having a substrate, a first protrusion and a second protrusion,
wherein the first protrusion disposed on the substrate has a recess and the second protrusion disposed on the first protrusion has an opening connecting the recess; and
disposing an adhesion layer and a LED chip on a bottom of the recess,
wherein the adhesion layer is bonded between the carrier and the LED chip, a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap exists between a sidewall of the LED chip and an inner sidewall of the recess, and a portion of the adhesive layer is disposed in the gap.
16. The method as claimed in claim 15 , forming a transparent material layer in the recess.
17. The method as claimed in claim 16 , further comprising forming a fluorescent material layer in the opening.
18. The method as claimed in claim 15 , further comprising forming a first conductive structure and a second conductive structure extending at least partially along the bottom of the substrate and penetrating the substrate and the first protrusion.
19. The method as claimed in claim 15 , where the substrate, the first protrusion and the second protrusion are integrally formed.
20. The method as claimed in claim 15 , further comprising forming a fluorescent material layer in the recess and the opening.
21. A method for fabricating a light emitting diode (LED) package structure, comprising:
providing a carrier having a substrate and a first protrusion, wherein the first protrusion is disposed on the substrate and has a recess;
forming an optical material layer at least partially on an inner wall of the recess, wherein the optical material layer is optically absorptive; and
disposing an adhesion layer and a LED chip on a bottom of the recess,
wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.
22. A method for fabricating a light emitting diode (LED) package structure, comprising:
providing a carrier having a substrate and a first protrusion, wherein the first protrusion is disposed on the substrate and has a recess;
disposing an adhesion layer and a LED chip on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess;
forming a second protrusion on the first protrusion, wherein the second protrusion having an opening connecting the recess; and
forming an optical material layer at least partially on an inner wall of the recess or the opening before disposing the adhesion layer and the LED chip on the bottom of the recess., wherein the optical material layer is optically absorptive.
23. A method for fabricating a light emitting diode (LED) package structure, comprising:
providing a carrier having a substrate and a first protrusion, wherein the first protrusion is disposed on the substrate and has a recess;
disposing an adhesion layer and a LED chip on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess; and
forming a first conductive structure and a second conductive structure extending at least partially along the bottom of the substrate and penetrating the substrate and the first protrusion.
24. A method for fabricating a light emitting diode (LED) package structure, comprising:
providing a carrier having a substrate, a first protrusion and a second protrusion, wherein the first protrusion disposed on the substrate has a recess and the second protrusion disposed on the first protrusion has an opening connecting the recess;
disposing an adhesion layer and a LED chip on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess; and
forming a first conductive structure and a second conductive structure extending at least partially along the bottom of the substrate and penetrating the substrate and the first protrusion.Cited by (0)
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