Semiconductor device and methods of making semiconductor device using graphene

Abstract

A semiconductor device and methods of making a semiconductor device using graphene are described. A monolithic three dimensional integrated circuit device includes a first layer having first active devices. The monolithic three dimensional integrated circuit device also includes a second layer having second active devices that each include a graphene portion. The second layer can be fabricated on the first layer to form a stack of active devices. A base substrate may support the stack of active devices.

What is claimed is: 
     
       1. A monolithic three dimensional integrated circuit (IC) device, comprising:
 a first layer comprising first active devices, wherein the first active devices do not include graphene; and 
 a second layer comprising second active devices, each having a graphene portion, the second layer being fabricated on the first layer to form a stack of active devices, 
 
       wherein the graphene portion is in direct contact with the first insulating layer. 
     
     
       2. The IC device of  claim 1 , further comprising a base substrate supporting the stack of active devices. 
     
     
       3. The IC device of  claim 1 , further comprising a first insulating layer surrounding on the first active devices. 
     
     
       4. The IC device of  claim 3 , further comprising interconnects extending through the first insulating layer and coupling to the first active devices. 
     
     
       5. The IC device of  claim 4 , further comprising a second insulating layer on the first insulating layer, the second insulating layer surrounding the second active devices. 
     
     
       6. The IC device of  claim 5 , further comprising graphene interconnects extending through the second insulating layer and coupling to the second active devices. 
     
     
       7. The IC device of  claim 1 , in which each of the first active devices and the second active devices is a transistor or a sensor. 
     
     
       8. The IC device of  claim 1 , further comprising an interconnect coupling the second active devices. 
     
     
       9. The IC device of  claim 1 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. 
     
     
       10. A method for manufacturing a monolithic three dimensional integrated circuit (IC) device, comprising:
 fabricating a first layer having first active devices on a base substrate; 
 growing a graphene layer on a conductive layer of a transitional substrate; 
 transferring the graphene layer onto the first layer; and 
 patterning and etching the graphene layer to form a graphene portion of a second layer having second active devices. 
 
     
     
       11. The method of  claim 10 , further comprising depositing a first insulating layer around the first active devices. 
     
     
       12. The method of  claim 11 , further comprising fabricating interconnects extending through the first insulating layer and coupling to the first active devices. 
     
     
       13. The method of  claim 11 , further comprising depositing a second insulating layer on the first insulating layer, the second insulating layer surrounding the second active devices. 
     
     
       14. The method of  claim 13 , further comprising fabricating graphene interconnects extending through the second insulating layer and coupling to the second active devices. 
     
     
       15. The method of  claim 10 , further comprising integrating the monolithic three dimensional integrated circuit (IC) device into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. 
     
     
       16. A monolithic three dimensional integrated circuit (IC) device, comprising:
 a first insulating layer comprising first active devices, wherein the first active devices do not include graphene; and 
 a second layer comprising a means for fabricating second active devices, the fabricating means having a reduced temperature for fabrication and improved electron mobility, the fabricating means provided on the first insulating layer to form a stack of active devices, wherein the fabricating means is in direct contact with the first insulating layer. 
 
     
     
       17. The monolithic three dimensional integrated circuit (IC) device of  claim 16 , further comprising: means for coupling to the second layer of second active devices. 
     
     
       18. The monolithic three dimensional integrated circuit (IC) device of  claim 16 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.