Photoresist system and method

Abstract

A system and method for photoresists is provided. In an embodiment a cross-linking or coupling reagent is included within a photoresist composition. The cross-linking or coupling reagent will react with the polymer resin within the photoresist composition to cross-link or couple the polymers together, resulting in a polymer with a larger molecular weight. This larger molecular weight will cause the dissolution rate of the photoresist to decrease, leading to a better depth of focus for the line.

What is claimed is: 
     
       1. A method for manufacturing a semiconductor device, the method comprising:
 applying a photoresist to a substrate, the photoresist comprising a resin and a cross-linking agent, the resin comprising a plurality of polymers, each one of the plurality of polymers comprising a backbone; 
 exposing the photoresist to a patterned energy, the patterned energy inducing a reaction to form a bond between a backbone of a first one of the plurality of polymers and a backbone of a second one of the plurality of polymers; and 
 developing the photoresist after the exposing the photoresist, the developing being performed with a negative tone developer, wherein the cross-linking agent has a structure of 
 
       
         
           
           
               
               
           
         
       
       wherein n can be from between 1 to 15, A and B comprise H, OH, halide, an aromatic carbon ring, or a straight or cyclic alkyl, alkoxyl/fluoro, alkyl/fluoroalkoxyl chain having a carbon number of between 1 and 12, and X and Y comprise —NH 2 , —SH, —OH, isopropyl alcohol, isopropyl amine, or a thiol. 
     
     
       2. The method of  claim 1 , wherein the resin comprises a coupling reagent. 
     
     
       3. The method of  claim 2 , wherein the coupling reagent has a structure of 
       
         
           
           
               
               
           
         
       
       wherein R is a carbon, nitrogen, sulfur, or oxygen atom, and M comprises —Cl; —Br; —I; —NO2; —SO3-; —H—; —CN; —NCO, —OCN; —CO2-; —OH; —OR*, —OC(O)CR*; —SR, —SO2N(R*)2; —SO2R*; SOR; —OC(O)R*; —C(O)OR*; —C(O)R*; —Si(OR*)3; —Si(R*)3; or epoxyl groups. 
     
     
       4. The method of  claim 1 , wherein the resin further comprises a coupling reagent. 
     
     
       5. A method of manufacturing a semiconductor device, the method comprising:
 dispensing a photoresist onto a substrate, the photoresist comprising a resin, a coupling reagent, and a photoactive compound; 
 exposing the photoresist to an energy source, the exposing the photoresist bonding a first polymer of the resin to a second polymer of the resin; and 
 developing the photoresist with a negative tone developer after the bonding the first polymer of the resin to the second polymer of the resin, wherein the coupling reagent has a structure of 
 
       
         
           
           
               
               
           
         
       
       wherein R is a carbon, nitrogen, sulfur, or oxygen atom, and M comprises —Cl; —Br; —I; —NO2; —SO3-; —H—; —CN; —NCO, —OCN; —CO2-; —OH; —OR*, —OC(O)CR*; —SR, —SO2N(R*)2; —SO2R*; SOR; —OC(O)R*; —C(O)OR*; —C(O)R*; —Si(OR*)3; —Si(R*)3; or epoxyl groups. 
     
     
       6. The method of  claim 5 , wherein the bonding the first polymer of the resin to the second polymer of the resin comprises a reaction of a cross-linking agent. 
     
     
       7. The method of  claim 6 , wherein the cross-linking agent has a structure of 
       
         
           
           
               
               
           
         
       
       wherein n can be from between 1 to 15, A and B comprise H, OH, halide, an aromatic carbon ring, or a straight or cyclic alkyl, alkoxyl/fluoro, alkyl/fluoroalkoxyl chain having a carbon number of between 1 and 12, and X and Y comprise —NH 2 , —SH, —OH, isopropyl alcohol, isopropyl amine, or a thiol. 
     
     
       8. The method of  claim 5 , wherein the bonding the first polymer of the resin to the second polymer of the resin further comprises a reaction comprising both a cross-linking agent and the coupling reagent. 
     
     
       9. The method of  claim 5 , wherein the bonding the first polymer of the resin to the second polymer of the resin further comprises a reaction comprising the coupling reagent but not a cross-linking agent. 
     
     
       10. A negative tone photoresist comprising:
 a polymer resin within the negative tone photoresist; 
 a photoactive compound; and 
 a cross-linking agent, wherein the cross-linking agent has a structure of 
 
       
         
           
           
               
               
           
         
       
       wherein n can be from between 1 to 15, A and B comprise H, OH, halide, an aromatic carbon ring, or a straight or cyclic alkyl, alkoxyl/fluoro, alkyl/fluoroalkoxyl chain having a carbon number of between 1 and 12, and X and Y comprise —NH 2 , —SH, —OH, isopropyl alcohol, isopropyl amine, or a thiol. 
     
     
       11. The negative tone photoresist of  claim 10 , further comprising a coupling reagent. 
     
     
       12. The negative tone photoresist of  claim 11 , wherein the coupling reagent has a structure of 
       
         
           
           
               
               
           
         
       
       wherein R is a carbon, nitrogen, sulfur, or oxygen atom, and M comprises —Cl; —Br; —I; —NO2; —SO3-; —H—; —CN; —NCO, —OCN; —CO2-; —OH; —OR*, —OC(O)CR*; —SR, —SO2N(R*)2; —SO2R*; SOR; —OC(O)R*; —C(O)OR*; —C(O)R*; —Si(OR*)3; —Si(R*)3; or epoxyl groups. 
     
     
       13. The negative tone photoresist of  claim 12 , wherein the coupling reagent has a structure of 
       
         
           
           
               
               
           
         
       
     
     
       14. The negative tone photoresist of  claim 12 , wherein the coupling reagent has a structure of