P
US8979087B2ActiveUtilityPatentIndex 63

Substrate supporting edge ring with coating for improved soak performance

Assignee: RANISH JOSEPH MPriority: Jul 29, 2011Filed: Jun 1, 2012Granted: Mar 17, 2015
Est. expiryJul 29, 2031(~5.1 yrs left)· nominal 20-yr term from priority
Inventors:RANISH JOSEPH MHUNTER AARON MUIR
H10P 72/7611H10P 72/0436H10P 72/7616Y10S269/909H01L 21/67115H01L 21/68735H01L 21/68757H10P 72/70H10P 72/7606
63
PatentIndex Score
3
Cited by
10
References
26
Claims

Abstract

Embodiments of the present invention provide a substrate supporting edge ring for supporting a substrate. In one embodiment, a substrate support ring is provided. The substrate support ring comprises an annular body. The annular body comprises an outer band extending radially inward from an outer annular sidewall; and a substrate supporting region extending inward from an inner portion of the outer band, wherein the annular body comprises a first material that is exposed and at least a portion of the substrate supporting region is covered with a coating comprising a second material that is different than the first material.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A substrate support ring, comprising:
 an annular body, comprising:
 an outer band extending radially inward in a plane from a first annular sidewall disposed outwardly of a second annular sidewall; and 
 a substrate supporting region extending inward from the second annular sidewall and below the plane of the outer band, wherein the annular body comprises a first material that is exposed and at least a portion of the substrate supporting region is covered with a coating comprising a second material that is different than the first material, wherein a plane of the substrate supporting region and the plane of the outer band are substantially parallel. 
 
 
     
     
       2. The ring of  claim 1 , wherein the first material comprises silicon carbide. 
     
     
       3. The ring of  claim 2 , wherein the second material comprises a refractory material. 
     
     
       4. The ring of  claim 3 , wherein the refractory material is selected from the group consisting of a ceramic material, sapphire, and a carbon material. 
     
     
       5. The ring of  claim 3 , wherein the refractory material is selected from the group consisting of an oxide film, a nitride film, and combinations thereof. 
     
     
       6. The ring of  claim 5 , wherein the refractory material is selected from the group consisting of aluminum oxide (Al 2 O 3 ), beryllium oxide (BeO), zirconium dioxide (ZrO 2 ), hafnium oxide (HfO 2 ), yttrium oxide (Y 2 O 3 ), thorium oxide (ThO 2 ), scandium oxide (Sc 2 O 3 ), rare earth oxides, zirconium nitride (ZrN), hafnium nitride (HfN), and combinations thereof. 
     
     
       7. The ring of  claim 1 , wherein the outer band comprises a silicon film. 
     
     
       8. The ring of  claim 7 , wherein the silicon film comprises a film selected from the group consisting of amorphous silicon, monocrystalline silicon, and polycrystalline silicon. 
     
     
       9. The ring of  claim 7 , wherein the silicon film comprises a first silicon layer, an oxide layer, and a second silicon layer disposed on the oxide layer. 
     
     
       10. The ring of  claim 1 , wherein the annular body includes a lower surface having a film disposed thereon. 
     
     
       11. The ring of  claim 1 , wherein the annular body includes a lower surface having a film disposed thereon. 
     
     
       12. A substrate support ring, comprising:
 an annular body comprising a ceramic material, the annular body comprising:
 a first annular sidewall; 
 an outer band extending radially outward from the first annular sidewall, the outer band comprising a first silicon layer, an oxide layer, and a second silicon layer disposed on the oxide layer; 
 a second annular sidewall coupled to the outer band; and 
 an inner lip extending radially inward from the first annular sidewall, the inner lip comprising a substrate supporting region, wherein the substrate supporting region consists of a film comprising a refractory material. 
 
 
     
     
       13. The ring of  claim 12 , wherein the refractory material is selected from the group consisting of a ceramic material, sapphire, and a carbon material. 
     
     
       14. The ring of  claim 13 , wherein the refractory material is selected from the group consisting of aluminum oxide (Al 2 O 3 ), beryllium oxide (BeO), zirconium dioxide (ZrO 2 ), yttrium oxide (Y 2 O 3 ), and combinations thereof. 
     
     
       15. The ring of  claim 13 , wherein the refractory material comprises a hardness of 7 or greater on the Mohs scale. 
     
     
       16. The ring of  claim 12 , wherein the film comprises a silicon film. 
     
     
       17. The ring of  claim 16 , wherein the silicon film comprises a film selected from the group consisting of amorphous silicon, monocrystalline silicon, and polycrystalline silicon. 
     
     
       18. A substrate support ring, comprising:
 an annular body comprising a first material, the annular body comprising:
 a first annular sidewall; 
 an outer band extending radially outward from the first annular sidewall; 
 a second annular sidewall coupled to the outer band; and 
 an inner lip extending radially inward from the first annular sidewall, wherein a periphery of the annular body includes a coating comprising a second material that is different than the first material, wherein the inner lip comprises a substrate supporting region, and the substrate supporting region includes a film disposed over the coating. 
 
 
     
     
       19. The ring of  claim 18 , wherein the first material comprises silicon carbide and the second material comprises a silicon film. 
     
     
       20. The ring of  claim 19 , wherein the silicon film comprises a film selected from the group consisting of amorphous silicon, monocrystalline silicon, and polycrystalline silicon. 
     
     
       21. The ring of  claim 20 , wherein the silicon film comprises a first silicon layer, an oxide layer, and a second silicon layer disposed on the oxide layer. 
     
     
       22. The ring of  claim 18 , wherein the coating comprises a dielectric film stack comprising alternating layers of refractory material. 
     
     
       23. The ring of  claim 18 , wherein the coating is continuous across the annular body. 
     
     
       24. The ring of  claim 18 , wherein the coating is continuous across the substrate supporting region. 
     
     
       25. The ring of  claim 18 , wherein the film is selected from the group consisting of a ceramic material, sapphire, and a carbon material. 
     
     
       26. The ring of  claim 18 , wherein the film is selected from the group consisting of aluminum oxide (Al 2 O 3 ), beryllium oxide (BeO), zirconium dioxide (ZrO 2 ), yttrium oxide (Y 2 O 3 ), and combinations thereof.

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