Mask structure

Abstract

A mask structure, including a substrate; an absorber layer formed on the substrate; and a patterned reflection layer formed on the absorber layer. Optionally, the mask structure may further include a buffer layer, a conductive coating, or combinations thereof. The buffer layer may be formed between the absorber layer and the reflection layer, and the conductive coating may be formed at a back side of the substrate.

What is claimed is: 
     
       1. A mask structure, comprising:
 a substrate; 
 an absorber layer formed on the substrate; and 
 a patterned reflection layer formed on the absorber layer and located at a top of the mask structure, wherein the patterned reflection layer is a multilayer stack having alternative layers of a relatively high refractive index material and a relatively low refractive index material, and is configured to reflect an EUV light. 
 
     
     
       2. The mask structure as claimed in  claim 1 , wherein the substrate comprises quartz or silicon. 
     
     
       3. The mask structure as claimed in  claim 1 , wherein the multilayer stack comprises a Ru/Si multilayer stack, a Mo/Be multilayer stack, a Mo compound/Si compound multilayer stack, a Si/Mo/Ru multilayer stack, a Si/Mo/Ru/Mo multilayer stack, or a Si/Ru/Mo/Ru multilayer stack. 
     
     
       4. The mask structure as claimed in  claim 1 , further comprising a buffer layer between the absorber layer and the reflection layer. 
     
     
       5. The mask structure as claimed in  claim 4 , wherein the buffer layer comprises SiO 2 , Cr, or CrN. 
     
     
       6. The mask structure as claimed in  claim 1 , further comprising a conductive coating formed at a back side of the substrate. 
     
     
       7. The mask structure as claimed in  claim 6 , wherein the conductive coating comprises Cr or CrN. 
     
     
       8. The mask structure as claimed in  claim 1 , wherein the absorber layer comprises TaN, TaBN, TaGeN, or TaBON.