Semiconductor device and method of manufacturing the same

Abstract

Provided are a semiconductor device including a through via plug and a method of manufacturing the same. In the semiconductor device, since a redistributed interconnection pattern is disposed on a protection film of a convex-concave structure having a protrusion and a recessed portion, the semiconductor device may have improved reliability while preventing a leakage current. In the method of manufacturing the semiconductor device, since an end surface of through via structure is exposed by removing a protection film and an insulating film liner using a selective etching process, damage to the through via structure is minimized, thereby preventing copper contamination in a substrate.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a substrate including a first surface and a second surface; 
 a protection film having a protrusion and a recessed portion, the protection film being disposed on the first surface; 
 a through via structure penetrating the substrate and the protection film and including an end surface coplanar with or higher than the recessed portion of the protection film; 
 a first interconnection pattern conformally covering a side surface and a lower surface of the recessed portion of the protection film, wherein a surface of the first interconnection pattern is coplanar with a surface of the protrusion; 
 a second interconnection pattern covering the first interconnection pattern and disposed in the recessed portion of the protection film, wherein a top surface of the first interconnection pattern is exposed by the second interconnection pattern; and 
 a mask pattern having an etching selectivity with respect to the protection film, the mask pattern being interposed between the protection film and the second interconnection pattern. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the protrusion of the protection film is higher than the end surface of the through via structure. 
     
     
       3. The semiconductor device of  claim 1 , wherein the through via structure comprises:
 a through via plug; 
 a through via seed film on a side surface of the through via plug; and 
 a diffusion prevention film on a side surface of the through via seed film and at the end surface of the through via structure. 
 
     
     
       4. The semiconductor device of  claim 1 , further comprising an insulating film liner between the through via structure and the substrate and between the through via structure and the protection film, wherein an angle between a top surface of the insulating film liner and a side surface of the through via structure is 90 degree or less. 
     
     
       5. The semiconductor device of  claim 1 , wherein the insulating film liner and the protection film include a same material. 
     
     
       6. The semiconductor device of  claim 1 , wherein a width of the recessed portion is greater than a width of the through via structure. 
     
     
       7. The semiconductor device of  claim 1 , further comprising interconnections and an interlayer insulating film on the second surface. 
     
     
       8. A semiconductor device comprising:
 a substrate having a first surface and a second surface; 
 a protection film on the first surface of the substrate, wherein the protection film includes at least one portion recessed toward the second surface of the substrate; 
 a through via structure formed through the substrate and the recessed portion of the protection film in a direction perpendicular to the substrate and the protection film; 
 a first interconnection pattern covering a side surface and a lower surface of the recessed portion of the protection film and an end surface of the through via structure, wherein an upper surface of the first interconnection pattern on the through via structure is disposed at a higher level than the upper surface of the first interconnection pattern on the lower surface of the recessed portion of the protection film; and 
 a second interconnection pattern formed on the first interconnection pattern. 
 
     
     
       9. The semiconductor device of  claim 8 , wherein a top surface of the through via structure is coplanar with a top surface of the recessed portion of the protection film. 
     
     
       10. The semiconductor device of  claim 8 , wherein a top surface of the through via structure is higher than a top surface of the recessed portion of the protection film. 
     
     
       11. The semiconductor device of  claim 8 , wherein the through via structure comprises:
 a through via plug; 
 a through via seed film covering the through via plug; and 
 a diffusion prevention film covering the through via seed film. 
 
     
     
       12. The semiconductor device of  claim 8 , further comprising an insulating film liner between the through via structure and the substrate and between the through via structure and the protection film, wherein a top surface of the insulating film liner is coplanar with a top surface of the recessed portion of the protection film. 
     
     
       13. The semiconductor device of  claim 8 , further comprising an insulating film liner between the through via structure and the substrate and between the through via structure and the protection film, wherein a top surface of the insulating film liner is inclined toward a side surface of the through via structure. 
     
     
       14. The semiconductor device of  claim 8 , further comprising:
 a mask pattern on a top surface of the protection film except for the recessed portion; 
 a first auxiliary interconnection pattern on the first and second interconnection patterns and part of the mask pattern; and 
 a second auxiliary interconnection pattern on the first auxiliary interconnection pattern, wherein top surfaces of the first and second interconnection patterns are coplanar with a top surface of the part of the mask pattern. 
 
     
     
       15. A semiconductor device comprising:
 a substrate having a first surface and a second surface; 
 a protection film on the first surface of the substrate, wherein the protection film includes at least one portion recessed toward the second surface of the substrate; 
 a through via structure formed through the substrate and the recessed portion of the protection film in a direction perpendicular to the substrate and the protection film; 
 a first interconnection pattern covering a side surface and a lower surface of the recessed portion of the protection film; and 
 a second interconnection pattern covering the first interconnection pattern and disposed in the recessed portion of the protection film, wherein an upper surface of the second interconnection pattern is substantially coplanar with an uppermost surface of the first interconnection pattern.