Ruthenium film formation method and storage medium

Abstract

A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent.

What is claimed is: 
     
       1. A ruthenium film formation method, comprising:
 forming a ruthenium oxide film on a substrate; and 
 reducing the ruthenium oxide film into a ruthenium film, 
 wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent and then supplying a reaction gas for decomposing the ruthenium compound gas containing hydrogen. 
 
     
     
       2. The method of  claim 1 , wherein the forming the ruthenium oxide film comprises forming the ruthenium oxide film by a CVD method using a ruthenium compound. 
     
     
       3. The method of  claim 2 , wherein the forming the ruthenium oxide film comprises forming the ruthenium oxide film on the substrate by supplying the ruthenium compound having a structure of the following chemical formula (1) in which two β-diketones and two groups selected from olefin, amine, nitrile and carbonyl are coordinated in Ru, to the substrate in a vapor phase state, supplying an oxygen gas to the substrate and allowing the ruthenium compound and the oxygen gas to react with each other: 
       
         
           
           
               
               
           
         
         where R 1  and R 2  are alkyl groups whose total carbon number is 2 to 5 and R 3  is a group selected from an olefin group, an amine group, a nitrile group and a carbonyl group. 
       
     
     
       4. The method of  claim 3 , wherein the forming the ruthenium oxide film is performed by simultaneously supplying the ruthenium compound of the vapor phase state and the oxygen gas. 
     
     
       5. The method of  claim 3 , wherein the forming the ruthenium oxide film is performed by alternately supplying the ruthenium compound of the vapor phase state and the oxygen gas with purge performed therebetween. 
     
     
       6. The method of  claim 2 , wherein the ruthenium compound gas containing hydrogen contains a ruthenium compound which is the same as the ruthenium compound used in forming the ruthenium oxide film. 
     
     
       7. The method of  claim 1 , wherein a ruthenium compound contained in the ruthenium compound gas containing hydrogen has a structure of the following chemical formula (1) in which two β-diketones and two groups selected from olefin, amine, nitrile and carbonyl are coordinated in Ru: 
       
         
           
           
               
               
           
         
         where R 1  and R 2  are alkyl groups whose total carbon number is 2 to 5 and R 3  is a group selected from an olefin group, an amine group, a nitrile group and a carbonyl group. 
       
     
     
       8. The method of  claim 1 , wherein the reducing the ruthenium oxide film is performed by alternately supplying, a plurality of times, the ruthenium compound gas containing hydrogen as the reducing agent and the reaction gas for decomposing the ruthenium compound gas containing hydrogen with purge performed therebetween. 
     
     
       9. A non-transitory storage medium operated on a computer and configured to store a program for controlling a processing apparatus, wherein the program, when executed, causes the computer to control the processing apparatus so as to perform the ruthenium film formation method of  claim 1 . 
     
     
       10. A ruthenium film formation method, comprising:
 forming a ruthenium oxide film on a substrate 
 by supplying a ruthenium compound having a structure of the following chemical formula (1) in which two β-diketones and two groups selected from olefin, amine, nitrile and carbonyl are coordinated in Ru, to the substrate in a vapor phase state, supplying an oxygen gas to the substrate and allowing the ruthenium compound and the oxygen gas to react with each other: 
 
       
         
           
           
               
               
           
         
         where R 1  and R 2  are alkyl groups whose total carbon number is 2 to 5 and R 3  is a group selected from an olefin group, an amine group, a nitrile group and a carbonyl group; and 
         reducing the ruthenium oxide film into a ruthenium film by supplying a ruthenium compound gas containing a ruthenium compound having the structure of the foregoing chemical formula (1) as a reducing agent and then supplying an oxygen gas. 
       
     
     
       11. The method of  claim 10 , wherein the reducing the ruthenium oxide film is performed by alternately supplying, a plurality of times, the ruthenium compound gas and the oxygen gas with purge performed therebetween. 
     
     
       12. The method of  claim 11 , wherein the number of repeated supply cycles of the ruthenium compound gas and the oxygen gas in the reducing the ruthenium oxide film is 2 to 500.