Method and system for forming patterns using charged particle beam lithography with variable pattern dosage

Abstract

A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

What is claimed is: 
     
       1. A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising the step of:
 determining a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the resist-coated surface, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter, and wherein the step of determining is performed using one or more computing hardware processors. 
 
     
     
       2. The method of  claim 1  wherein the dose margin is optimized. 
     
     
       3. The method of  claim 2  wherein the plurality of shaped beam shots produces a higher resist dosage peak near the pattern perimeter than in an interior area of the pattern on the surface. 
     
     
       4. The method of  claim 1  wherein the calculating comprises charged particle beam simulation. 
     
     
       5. The method of  claim 4  wherein the charged particle beam simulation includes at least one of a group consisting of forward scattering, backward scattering, resist diffusion, Coulomb effect, etching, fogging, loading and resist charging. 
     
     
       6. The method of  claim 1 , further comprising the step of revising the plurality of shaped beam shots and recalculating the dose margin if the dose margin is lower than a pre-determined target dose margin. 
     
     
       7. The method of  claim 1  wherein each shot in the plurality of shaped beam shots comprises an assigned dosage, and wherein the assigned dosages of at least two shots in the plurality of shaped beam shots differ from each other before dosage correction for long-range effects. 
     
     
       8. The method of  claim 1  wherein each shot in the plurality of shaped beam shots is a variable shaped beam (VSB) shot. 
     
     
       9. The method of  claim 1  wherein the surface comprises a reticle to be used in an optical lithographic process to manufacture a substrate. 
     
     
       10. A method for manufacturing a surface using charged particle beam lithography, the method comprising the steps of:
 determining a plurality of shaped beam shots for a plurality of exposure passes; and 
 forming a pattern on the surface, wherein the surface has been coated with a resist, wherein a charged particle beam writer produces a dosage on the resist-coated surface using the plurality of shaped beam shots, wherein the dosage on the resist-coated surface forms the pattern, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, 
 wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter. 
 
     
     
       11. The method of  claim 10  wherein the dose margin is optimized. 
     
     
       12. The method of  claim 11  wherein the plurality of shaped beam shots produces a higher resist dosage peak near the pattern perimeter on the surface than in an interior area of the pattern on the surface. 
     
     
       13. The method of  claim 10  wherein the calculating comprises charged particle beam simulation. 
     
     
       14. The method of  claim 13  wherein the charged particle beam simulation includes at least one of a group consisting of forward scattering, backward scattering, resist diffusion, Coulomb effect, etching, fogging, loading and resist charging. 
     
     
       15. The method of  claim 10 , further comprising the step of revising the plurality of shaped beam shots and recalculating the dose margin if the dose margin is lower than a pre-determined target dose margin. 
     
     
       16. The method of  claim 10  wherein each shot in the plurality of shaped beam shots comprises an assigned dosage, and wherein the assigned dosages of at least two shots in the plurality of shaped beam shots differ before dosage correction for long-range effects. 
     
     
       17. The method of  claim 16 , further comprising the step of performing dose correction for long-range effects, wherein the assigned dosages of at least two shots in the plurality of shaped beam shots differ from each other before the dose correction. 
     
     
       18. The method of  claim 10  wherein the surface comprises a reticle to be used in an optical lithographic process to manufacture a substrate. 
     
     
       19. A method for manufacturing an integrated circuit using an optical lithographic process, the optical lithographic process using a reticle manufactured with charged particle beam lithography, the method comprising the steps of:
 determining a plurality of shaped beam shots for an exposure pass; and 
 forming a pattern on the reticle, wherein the reticle has been coated with a resist, wherein a charged particle beam writer produces a dosage on the resist-coated reticle using the plurality of shaped beam shots, wherein the dosage on the resist-coated reticle forms the pattern, wherein the pattern on the reticle comprises a pattern perimeter, wherein the resist comprises a resist threshold, 
 wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter. 
 
     
     
       20. The method of  claim 19  wherein the calculating comprises charged particle beam simulation. 
     
     
       21. The method of  claim 20  wherein the charged particle beam simulation includes at least one of a group consisting of forward scattering, backward scattering, resist diffusion, Coulomb effect, etching, fogging, loading and resist charging. 
     
     
       22. A system for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising:
 a device configured to determine a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the surface, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the device configured to determine calculates a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter. 
 
     
     
       23. The system of  claim 22  wherein the dose margin is optimized. 
     
     
       24. The system of  claim 23  wherein the plurality of shaped beam shots produces a higher resist dosage peak near the pattern perimeter than in an interior area of the pattern on the surface. 
     
     
       25. The system of  claim 22  wherein each shot in the plurality of shaped beam shots is a variable shaped beam (VSB) shot.