Process tool having third heating source and method of using the same

Abstract

A processing tool includes a chamber configured to receive a wafer, the chamber having a sidewall and a sidewall heating source configured to heat the sidewall of the chamber. The processing tool further includes a first heating source configured to provide energy to an interior of the chamber through a top surface of the chamber and a second heating source configured to provide energy to the interior of the chamber through a bottom surface of the chamber. The sidewall heating source is separate from the first heating source and the second heating source.

What is claimed is: 
     
       1. A processing tool comprising:
 a chamber configured to receive a wafer, the chamber having a sidewall; 
 a sidewall heating source configured to heat the sidewall of the chamber, wherein the sidewall heating source is configured to receive a heating fluid; 
 a first heating source configured to provide energy to an interior of the chamber through a top surface of the chamber; and 
 a second heating source configured to provide energy to the interior of the chamber through a bottom surface of the chamber, 
 wherein the sidewall heating source is separate from the first heating source and the second heating source. 
 
     
     
       2. The processing tool of  claim 1 , wherein the sidewall heating source comprises:
 an inlet port for permitting the heating fluid to pass into the interior of the chamber; and 
 an outlet port for permitting the heating fluid to exit the interior of the chamber. 
 
     
     
       3. The processing tool of  claim 1 , wherein the chamber further comprises an outer sidewall configured to surround the sidewall to form a space therebetween. 
     
     
       4. The processing tool of  claim 3 , wherein the sidewall heating source comprises a coil configured to receive the heating fluid, and the coil is disposed in the space. 
     
     
       5. The processing tool of  claim 3 , wherein the heating fluid comprises a gas. 
     
     
       6. The processing tool of  claim 3 , further comprising an insulating material disposed in the space. 
     
     
       7. The processing tool of  claim 1 , further comprising:
 a first window configured to allow energy from the first heating source to enter the interior of the chamber; and 
 a second window configured to allow energy from the second heating source to enter the interior of the chamber. 
 
     
     
       8. The processing tool of  claim 1 , further comprising at least one wafer mount disposed in the chamber, each wafer mount of the at least one wafer mount is configured to support the wafer. 
     
     
       9. The processing tool of  claim 1 , further comprising a controller configured to regulate the sidewall heating source. 
     
     
       10. The processing tool of  claim 9 , wherein the controller is configured to provide analog control of the sidewall heating source. 
     
     
       11. A processing tool comprising:
 a chamber configured to receive a wafer, the chamber comprising:
 an inner sidewall defining an interior of the chamber, 
 an outer sidewall surrounding the inner sidewall, and 
 a space between the inner sidewall and the outer sidewall; 
 
 a sidewall heating source configured to heat the inner sidewall, wherein the sidewall heating source is configured to receive a heating fluid; 
 a first heating source configured to provide energy to the interior of the chamber; and 
 a second heating source configured to provide energy to the interior of the chamber, 
 wherein the sidewall heating source is separate from the first heating source and the second heating source. 
 
     
     
       12. The processing tool of  claim 11 , further comprising a coil in the space, wherein the coil is configured to receive the heating fluid. 
     
     
       13. The processing tool of  claim 11 , wherein the heating fluid is a gas. 
     
     
       14. The processing tool of  claim 11 , further comprising an insulating material disposed in the space. 
     
     
       15. The processing tool of  claim 11 , wherein the space is configured to allow the heating fluid to flow between the inner sidewall and the outer sidewall. 
     
     
       16. The processing tool of  claim 11 , further comprising a controller configured to regulate the sidewall heating source. 
     
     
       17. A method of using a processing tool having a chamber comprising a sidewall, the method comprising:
 pre-heating the sidewall of the chamber using a sidewall heating source; 
 loading a wafer into the chamber; 
 activating at least one of a first heating source or a second heating source, the at least one first heating source or second heating source being separate from the sidewall heating source; and 
 controlling the sidewall heating source to regulate a temperature of the sidewall of the chamber. 
 
     
     
       18. The method of  claim 17 , wherein pre-heating the sidewall of the chamber comprises supplying heat to the sidewall of the chamber using an electrical resistive heater. 
     
     
       19. The method of  claim 17 , wherein pre-heating the sidewall of the chamber comprises supplying a heating fluid to a coil in thermal contact with the sidewall. 
     
     
       20. The method of  claim 17 , wherein the chamber comprises an outer sidewall surrounding the sidewall to define a space therebetween, and pre-heating the sidewall of the chamber comprises supplying a heating fluid to the space.