Film forming method

Abstract

A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.

What is claimed is: 
     
       1. A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas, the method comprising:
 forming a first film including at least Si, C and N; and 
 forming a second film including at least Si, C and O, 
 wherein a cycle including the forming a first film and the forming a second film is performed two or more times. 
 
     
     
       2. The method of  claim 1 , wherein the forming a first film comprises:
 a Si supply operation for supplying the silane-based gas; 
 a C supply operation for supplying the hydrocarbon gas; and 
 an N supply operation for supplying the nitriding gas, 
 wherein a cycle including the Si supply operation, the C supply operation and the N supply operation is performed one or more times. 
 
     
     
       3. The method of  claim 2 , wherein the hydrocarbon gas is supplied during at least one of the Si supply and the N supply operation. 
     
     
       4. The method of  claim 2 , wherein the nitriding gas is supplied during the C supply operation. 
     
     
       5. The method of  claim 2 , wherein a purge operation for supplying an inert gas or a hydrogen gas as a purge gas is performed between the respective supply operations. 
     
     
       6. The method of  claim 5 , wherein the purge operation for supplying the hydrogen gas as the purge gas is performed immediately after the Si supply operation for supplying the silane-based gas. 
     
     
       7. The method of  claim 1 , wherein the forming a first film comprises:
 a Si supply operation for supplying the silane-based gas; and 
 a C/N simultaneous supply operation for simultaneously supplying the hydrocarbon gas and the nitriding gas, 
 wherein a cycle including the Si supply operation and the C/N simultaneous supply operation is performed one or more times. 
 
     
     
       8. The method of  claim 1 , wherein the forming a first film comprises:
 a Si/C continuous supply operation in which a cycle including a Si supply operation for supplying the silane-based gas and a C supply operation for supplying the hydrocarbon gas is performed a plurality of times; and 
 an N supply operation for supplying the nitriding gas, 
 wherein a cycle including the Si/C continuous supply operation and the N supply operation is performed one or more times. 
 
     
     
       9. The method of  claim 1 , wherein the forming a first film comprises:
 a Si/C simultaneous supply operation for simultaneously supplying the silane-based gas and the hydrocarbon gas; and 
 an N supply operation for supplying the nitriding gas, and 
 wherein a cycle including the Si/C simultaneous supply operation and the N supply operation is performed one or more times. 
 
     
     
       10. The method of  claim 1 , wherein the forming a first film comprises an amino-based silane supply operation for supplying a carbon-containing amino-based silane gas as the silane-based gas. 
     
     
       11. The method of  claim 1 , wherein the forming a first film comprises:
 an amino-based silane supply operation for supplying a carbon-containing amino-based silane gas as the silane-based gas; and 
 an N supply operation for supplying the nitriding gas, 
 wherein a cycle including the amino-based silane supply operation and the N supply operation is performed one or more times. 
 
     
     
       12. The method of  claim 1 , wherein the forming a second film comprises:
 a Si supply operation for supplying the silane-based gas; 
 a C supply operation for supplying the hydrocarbon gas; and 
 an O supply operation for supplying the oxidizing gas, 
 wherein a cycle including the Si supply operation, the C supply operation and the O supply operation is performed one or more times. 
 
     
     
       13. The method of  claim 12 , wherein the hydrocarbon gas is supplied during at least one of the Si supply operation and the O supply operation. 
     
     
       14. The method of  claim 12 , wherein the oxidizing gas is supplied during the C supply operation. 
     
     
       15. The method of  claim 1 , wherein the forming a second film comprises:
 a Si supply operation for supplying the silane-based gas; and 
 a C/O simultaneous supply operation for simultaneously supplying the hydrocarbon gas and the oxidizing gas, wherein a cycle including the Si supply operation and the C/O simultaneous supply operation is performed one or more times. 
 
     
     
       16. The method of  claim 1 , wherein the forming a second film comprises:
 a Si/C continuous supply operation in which a cycle including a Si supply operation for supplying the silane-based gas and a C supply operation for supplying the hydrocarbon gas is performed a plurality of times; and 
 an O supply operation for supplying the oxidizing gas, 
 wherein a cycle including the Si/C continuous supply operation and the O supply operation is performed one or more times. 
 
     
     
       17. The method of  claim 1 , wherein the forming a second film comprises:
 a Si/C simultaneous supply operation for simultaneously supplying the silane-based gas and the hydrocarbon gas; and 
 an O supply operation for supplying the oxidizing gas, 
 wherein a cycle including the Si/C simultaneous supply operation and the O supply operation is performed one or more times. 
 
     
     
       18. The method of  claim 1 , wherein the forming a second film comprises:
 an amino-based silane supply operation for supplying a carbon-containing amino-based silane gas as the silane-based gas; and 
 an O supply operation for supplying the oxidizing gas, 
 wherein a cycle including the amino-based silane supply operation and the O supply operation is performed one or more times. 
 
     
     
       19. The method of  claim 1 , wherein at least one of the nitriding gas and the oxidizing gas is activated. 
     
     
       20. The method of  claim 1 , wherein the silane-based gas is one or more gases selected from the group consisting of hexachlorodisilane (HCD), dichlorosilane (DCS), monosilane (SiH 4 ), disilane (Si 2 H 6 ), hexamethyldisilazane (HMDS), tetrachlorosilane (TCS), disilylamine (DSA), trisilylamine (TSA), bis-(tertiary butyl amino)-silane (BTBAS), diisopropylaminosilane (DIPAS) and amino-based silane gases. 
     
     
       21. The method of  claim 1 , wherein the hydrocarbon gas is one or more gases selected from the group consisting of propylene, acetylene, ethylene, methane, ethane, propane and butane. 
     
     
       22. The method of  claim 1 , wherein the nitriding gas is one or more gases selected from the group consisting of ammonia (NH 3 ), dinitrogen monoxide (N 2 O) and nitrogen monoxide (NO). 
     
     
       23. The method of  claim 1 , wherein the oxidizing gas is one or more gases selected from the group consisting of oxygen (O 2 ), ozone (O 3 ), dinitrogen monoxide (N 2 O) and nitrogen monoxide (NO).