Suspended superconducting qubits

Abstract

A qubit system includes a substrate layer, a qubit circuit suspended above the substrate layer and fine structure disposed between the qubit circuit and the substrate layer.

What is claimed is: 
     
       1. A method of fabricating a qubit system, the method comprising:
 forming a qubit circuit on a substrate; and 
 undercutting the substrate such that fine structures remain suspending the qubit circuit above remaining substrate; 
 wherein the qubit circuit is a trilayer material stack having a suspended portion disposed between anchored larger portions at opposing ends of the suspended portion; 
 wherein the fine structures are portions of the substrate that have been undercut, and the anchored larger portions are only partially undercut from the substrate such that a mid-portion of a bottom surface of the anchored larger portions are in contact with the substrate, and outer portions of the bottom surface of the anchored larger portions are not in contact with the substrate; 
 wherein each of the fine structures separately suspends different parts of the qubit circuit on a one-to-one basis, each of the different parts being held individually by the fine structures, such that a perimeter of each of the different parts are suspended in the air above the substrate by touching the fine structures underneath each of the different parts of the qubit circuit on a one-to-one basis; 
 wherein each of the fine structures is wider at a bottom and narrows at a top, such that a width of the fine structures is larger at the bottom than the top. 
 
     
     
       2. The method as claimed in  claim 1  wherein the fine structure couples the qubit circuit to the substrate layer. 
     
     
       3. The method as claimed in  claim 1  wherein a substrate-to-air interface is removed from electric fields of the resonant modes of the quantum circuit. 
     
     
       4. The method as claimed in  claim 1 , wherein the undercut structure is formed by undercutting along the perimeter of features of the qubit circuit. 
     
     
       5. The method as claimed in  claim 1 , wherein the substrate is a on a Si-on-sapphire (SOS) substrate. 
     
     
       6. The method as claimed in  claim 5  wherein a silicon (Si) portion of the SOS substrate is removed to form the fine structure.