Semicondcutor light-emitting device and fabricating method thereof

Abstract

A semiconductor light-emitting device including a light-emitting diode chip and an electrode disposed thereon is provided. The electrode at least includes a plated silver alloy (Ag 1-x Y x ) layer, wherein the Y of the Ag 1-x Y x layer includes metals forming a complete solid solution with Ag at arbitrary weight percentage, and the X of the Ag 1-x Y x layer is in a range from about 0.02 to 0.15. The fabricating method thereof is also provided.

What is claimed is: 
     
       1. A semiconductor light-emitting device, comprising:
 a light-emitting diode chip; and 
 an electrode, disposed on the light-emitting diode chip, the electrode at least comprising: 
 a plated silver alloy (Ag 1-x Y x ) layer, wherein the Y of the Ag 1-x Y x  layer comprises metals forming a complete solid solution with Ag at predetermined weight percentage, and the X of the Ag 1-x Y x  layer is in a range from 0.02 to 0.15; 
 an adhesive layer, disposed between the light-emitting diode chip and the Ag1-xYx layer; and 
 a seed layer, disposed between the adhesive layer and the Ag1-xYx layer. 
 
     
     
       2. The semiconductor light-emitting device according to  claim 1 , wherein the Y of the Ag 1-x Y x  layer comprises gold, palladium, or an alloy thereof. 
     
     
       3. The semiconductor light-emitting device according to  claim 1 , wherein a thickness of the Ag 1-x Y x  layer is between 2 micrometers and 8 micrometers. 
     
     
       4. The semiconductor light-emitting device according to  claim 1 , wherein an average grain size of the Ag 1-x Y x  layer is between 0.5 micrometers and 1.5 micrometers. 
     
     
       5. The semiconductor light-emitting device according to  claim 1 , wherein a material of the adhesive layer comprises nickel, titanium, titanium tungsten, palladium, gold, silver, or an alloy thereof, and a thickness of the adhesive layer is between 1000 angstroms and 3000 angstroms; a material of the seed layer comprises platinum, silver, or an alloy thereof, and a thickness of the seed layer is between 500 angstroms and 1000 angstroms. 
     
     
       6. The semiconductor light-emitting device according to  claim 1 , further comprising:
 a solder wire or a bump, disposed on the Ag 1-x Y x  layer to be electrically connected with the light-emitting diode chip and another element. 
 
     
     
       7. A fabricating method of a semiconductor light-emitting device, comprising:
 providing a light-emitting diode chip; 
 forming a patterned photoresist layer on the light-emitting diode chip, the patterned photoresist layer having an opening, the opening exposing a surface of the light-emitting diode chip; and 
 forming a plated silver alloy (Ag 1-x Y x ) layer in the opening by an electroplating process, wherein the Y of the Ag 1-x Y x  layer comprises metals forming a complete solid solution with Ag at predetermined weight percentage and the X of the Ag1-xYx layer is in a range from 0.02 to 0.15, such that the Ag 1-x Y x  layer is located on the light-emitting diode chip and electrically connected with the light-emitting diode chip. 
 
     
     
       8. The fabricating method of the semiconductor light-emitting device according to  claim 7 , before forming the Ag 1-x Y x  layer, further comprising:
 conformally forming an adhesive material layer on the light-emitting diode chip, the adhesive material layer covering a surface of the patterned photoresist layer and a bottom of the opening; 
 conformally forming a seed material layer on the adhesive material layer; 
 forming a silver alloy material layer on the seed material layer; and 
 removing the patterned photoresist layer to pattern the adhesive material layer, the seed material layer and the silver alloy material layer together. 
 
     
     
       9. The fabricating method of the semiconductor light-emitting device according to  claim 8 , wherein a method of forming the adhesive material layer and the seed material layer comprises evaporation, sputtering, or plating. 
     
     
       10. The fabricating method of the semiconductor light-emitting device according to  claim 7 , after forming the Ag 1-x Y x  layer, further comprising forming a solder wire or a bump on the Ag 1-x Y x  layer to be electrically connected with the light-emitting diode chip and another element.