P
USD770994SActiveUtilityPatentIndex 98

Power semiconductor device

Assignee: MITSUBISHI ELECTRIC CORPPriority: Apr 2, 2014Filed: Jun 20, 2016Granted: Nov 8, 2016
Est. expiryApr 2, 2034(~7.8 yrs left)· nominal 20-yr term from priority
Inventors:HASEGAWA MAKIKATO MASAHIRONAKAGAWA SHINYAKAWAFUJI HISASHIIWAGAMI TORU
98
PatentIndex Score
32
Cited by
37
References
1
Claims

Claims

exact text as granted — not AI-modified
CLAIM 
     
       The ornamental design for a power semiconductor device, as shown and described.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.