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Power semiconductor device

76
Assignee: MITSUBISHI ELECTRIC CORPPriority: Apr 2, 2014Filed: Sep 29, 2014Granted: Nov 22, 2016
Est. expiryApr 2, 2034(~7.7 yrs left)· nominal 20-yr term from priority
Inventors:Maki HasegawaMasahiro KatoShinya NakagawaHisashi KawafujiToru Iwagami
76
PatentIndex Score
13
Cited by
43
References
1
Claims

Claims

exact text as granted — not AI-modified
CLAIM 
     
       The ornamental design for a power semiconductor device, as shown and described.

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