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Gas introduction plate for plasma etching apparatus for etching semiconductor wafer

41
Assignee: TOKYO ELECTRON LTDPriority: Jun 8, 2018Filed: Nov 29, 2018Granted: Mar 2, 2021
Est. expiryJun 8, 2038(~11.9 yrs left)· nominal 20-yr term from priority
Inventors:Takaaki NezuYoshitaka Tamura
41
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3
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CLAIM 
     
       The ornamental design for a gas introduction plate for plasma etching apparatus for etching semiconductor wafer, as shown and described.

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