Metal selective polymer removal

Abstract

A metal selective polymer removal process is disclosed which prevents metal lift-off for use especially suited for ULSI fabrication.

We claim: 
     
       1. A process for removal of . .metal etch.!. byproducts .Iadd.from a metal etch .Iaddend.from a semiconductor wafer comprising the following steps: introducing HF into a chamber containing said wafer which includes non-water soluble byproducts thereon;   introducing N 2  +xH 2  O, where x is a real number, into said chamber; and   removing soluble byproducts from said wafer after performing the above steps.   
     
     
       2. A process as recited in claim 1 where HF is anhydrous. 
     
     
       3. A process for removing post etch metal silicate-containing residue from a metal structure comprising the following steps: introducing vapor HF into a chamber containing said metal structure which includes non water soluble residue thereon;   passing a gas over water and introducing the result into said chamber; and   removing said post etch metal silicate-containing residue from said structure after performing the above steps.   
     
     
       4. A process as recited in claim 1 wherein said HF is vapor HF made . .form.!. .Iadd.from .Iaddend.aqueous HF. 
     
     
       5. A process as recited in claim 1 which is performed within a wafer . .vapos.!. .Iadd.vapor .Iaddend.phase cleaner. 
     
     
       6. A process for removing sidewall polymer from the posts of a deformable mirror device comprising the following steps: introducing HF into a chamber containing said device which includes non-water soluble byproducts thereon,   introducing N 2  +xH 2  O, where x is a real number, into said chamber; and   removing soluble byproduct from said device after performing the above steps.   
     
     
       7. A process as recited in claim 6 which is performed within a vapor phase cleaner. 
     
     
       8. A process for removing post etch residue from a metal structure comprising the following steps: introducing anhydrous HF into a chamber containing said metal structure which includes non water soluble residue thereon;   introducing water vapor into said chamber; and   removing said post .Iadd.etch .Iaddend.residue from said structure after performing the above steps.   
     
     
       9. A process as recited in claim 8 wherein the removal of said post etch residue includes rinsing said structure with water. 
     
     
       10. A process for removing post etch residue from a metal structure comprising the following steps: introducing anhydrous HF into a chamber containing said metal structure which includes non water soluble residue thereon;   passing a gas over water and introducing the result into said chamber; and   removing said post etch residue from said structure after performing the above steps.   
     
     
       11. A process as recited in claim 10 wherein the removal of said post etch residue includes rinsing said structure with water. 
     
     
       12. A process as recited in claim 10 wherein said gas is nitrogen. 
     
     
       13. A process as recited in claim 3 wherein said gas is nitrogen. 
     
     
       14. A process as recited in claim 3 wherein the removal of said post etch residue includes rinsing said structure with water. .Iadd. 
     
     
       15.  The process of claim 1 wherein the removing of the soluble byproducts includes rinsing the wafer with water..Iaddend..Iadd.16. The process of claim 1 whereby the introducing HF and N 2  +xH 2  O further comprises chemically reacting the non-soluble byproducts so as to form water soluble byproducts..Iaddend..Iadd.17. The process of claim 1 wherein the byproducts comprise carbon and metal..Iaddend..Iadd.18. The process of claim 8 whereby the introducing the anhydrous HF step and the introducing water vapor step further comprises chemically reacting the non-soluble residue so as to form water soluble residue prior to removing the residue..Iaddend..Iadd.19. The process of claim 10 whereby the introducing the anhydrous HF step and the introducing water vapor step further further comprises chemically reacting the non-soluble residue so as to form water soluble residue prior to removing the residue..Iaddend.