Switch mode power supply with reduced switching losses

Abstract

The invention relates to a switching transistor presenting reduced switching losses. In the switching transistor, output capacitance is very high when drain/source voltages are low. As the drain/source voltage increases, the capacitance falls to such low values that the energy stored in the transistor becomes very low.

1. A switch mode power supply, comprising:
 a switching transistor having a load path formed by a first main connection and a second main connection, said first main connection and said second main connection for receiving a voltage applied thereto, said switching transistor including a semiconductor body with a semiconductor layer of a first conductance type forming a drift area ;  
 a load connected in series with said load path of said switching transistor;  
 a continuous drain region of a second conductance type incorporated into said drift area  semiconductor layer and connected to said first main connection;  
 a continuous source region of the second conductance type incorporated into said drift area  semiconductor layer and connected to said second main connection;  
 a reverse-biased pn-junction produced by an interaction between said semiconductor body  layer and said continuous drain region and between said semiconductor body  layer and said continuous source region;  
 said reverse-biased pn-junction having a large inner voltage-dependent surface area that is variable as a function of the voltage applied to said first main connection and said second main connection;  
 when the gate to source voltage applied is 10 V, said switching transistor is characterized by a first product of a switch-on resistance R on  and a gate charge Q gtot , the first product given by: R on *Q gtot /10 V≦2.5 ns; and  
 when the drain to source voltage applied is 400 V, said switching transistor is characterized by a second product of the switch-on resistance R on  and energy E ds  stored in a drain-source capacitance, the second product given by R on *E ds ≦1.6 V 2  μs.  
 
     
     
       2. The switch mode power supply according to  claim 1 , wherein said voltage-dependent surface area of said pn-junction is reduced as the voltage applied is increased. 
     
     
       3. The switch mode power supply according to  claim 2 , wherein an amount of charge in said switching transistor, which is calculated via a line integral along a line at right angles to said pn-junction, remains below a material-specific breakdown charge. 
     
     
       4. The switching transistor according to  claim 3 , wherein said continuous drain region of said second conductance type and said continuous source region of said second conductance type are configured in a structure selected from the group consisting of a vertical structure and a lateral structure. 
     
     
       5. The switch mode power supply according to  claim 1 , comprising a charge storage device connected in parallel with said load path of said switching transistor. 
     
     
       6. The switch mode power supply according to  claim 1 , wherein the drain region and the semiconductor layer comprise areas which are nested in each other. 
     
     
       7. The switch mode power supply according to  claim 6 , wherein the nested areas form strips of alternating conductivity type. 
     
     
       8. The switch mode power supply according to  claim 1 , wherein the drain region and/or the source region have a meandering shape. 
     
     
       9. The switch mode power supply according to  claim 1 , wherein the drain region and/or the source region each comprise a plurality of columns. 
     
     
       10. The switch mode power supply according to  claim 9 , wherein the columns have a square shape. 
     
     
       11. The switch mode power supply according to  claim 9 , wherein the columns have a hexagon shape. 
     
     
       12. The switch mode power supply according to  claim 9 , wherein the columns are leaf- shaped.