Negative type resist composition

Abstract

A negative type resist composition is provided, which provides excellent resolution, satisfactory profile and outstanding process stability; is suitable for exposure using deep ultra violet ray; and comprises alkali soluble resin, acid generator, crosslinking agent, and a basic compound represented by the following formula (I) wherein, A represents sulfide group, disulfide group or bivalent aliphatic hydrocarbon residue which may be optionally interrupted by imino group, sulfide group, or disulfide group, X represents nitrogen atom or C(NH 2 ), and R 1 and R 2 independently represent hydrogen or alkyl.

1. A negative type resist composition comprising alkali soluble resin,  polyvinyl phenol- based resin in which the phenolic hydroxyl group is partially alkyl - etherified,  acid generator, crosslinking agent, and a basic compound represented by the following formula (I) 
                 
 
       wherein, A represents bivalent aliphatic hydrocarbon residue which may be optionally interrupted by imino group, sulfide group, or disulfide group  a sulfide group or disulfide group, X represents a nitrogen atom or C(NH 2 ) , and R 1  and R 2  independently represent hydrogen or alkyl provided that, when X represents C(NH 2 ), A represents sulfide group or disulfide group . 
     
     
       2. The negative type resist composition according to  claim 1 , wherein the basic compound of the formula (I) is represented by the following formula (Ia): 
                 
 
       wherein, A, X, R 1  and R 2  are the same as defined in  claim 1 , and the marks, “}” and “{”, indicate that A is positioned on 3-position, or 4-position on the six-membered rings with respect to X. 
     
     
       3. The negative type resist composition according to  claim 1 , wherein the basic compound of the formula (I) is represented by the following formula (Ib): 
                   
       wherein, A, R 1  and R 2  are the same as defined in  claim 1 . 
     
     
       4. The negative type resist composition according to  claim 3 , wherein A is a linear alkylene having 2 to 4 carbon atoms, linear alkylene having 2 to 4 carbon atoms or iminobisalkylene having 2 to 6 carbon atoms. 
     
     
       5. The negative type resist composition according to  claim 4 , wherein the basic compound of formula (Ib) is selected from 1,2-di(4-pyridyl)ethane, 1,3-di(4-pyridyl)propane, 1,2-di(4-pyridyl)ethylene and bis(3-pyridylmethyl)amine. 
     
     
       6. The negative type resist composition according to  claim 3 , wherein A is a sulfide group or a dilsufide group. 
     
     
       7. The negative type resist composition according to claim  6    1 , wherein the basic compound of formula (Ib)  (I) is selected from 4,4′-dipyridylsulfide and 4,4′-dipyridyldisulfide. 
     
     
       8. The negative type resist composition according to  claim 1 , wherein the alkali soluble resin is a polyvinyl phenol-based resin. 
     
     
       9. The negative type resist composition according to  claim 1 , wherein the acid generator Is  is a sulfonic ester of N-hydroxyimide compound. 
     
     
       10. The negative type resist composition according to  claim 1 ,  2 ,  7 , or  9 , wherein composition ratio of the basic compound of formula (I) is between 0.02 and 1 wt %, based on the total solid content in the composition. 
     
     
       11. The negative type resist composition according to  claim 1 , wherein A is a linear alkylene having 2 to 4 carbon atoms, linear alkylene having 2 to 4 carbon atoms or iminobisalkylene having 2 to 6 carbon atoms. 
     
     
       12. The negative type resist composition according to  claim 1 , wherein A is a sulfide group or a disulfide group. 
     
     
       13. The negative type resist composition according to  claim 1 , wherein A is selected from the group consisting of methylene, ethylene, vinylene, trimethylene, tetramethylene, iminobismethylene, sulfide and disulfide.