Pattern forming method, processing method, and processing apparatus

Abstract

According to the embodiments, a distribution of a recess portion shape is calculated based on a result obtained by measuring the recess portion shape of a first projection and recess pattern formed on a surface of a template. Next, a distribution of an application amount of a curing agent to a processing target layer is calculated based on the distribution of the recess portion shape, and the curing agent is applied to the processing target layer based on this distribution of the application amount of the curing agent. Next, a second projection and recess pattern is formed by transferring the first projection and recess pattern onto the curing agent by causing the curing agent to cure in a state where the first projection and recess pattern is in contact with the curing agent.

What is claimed is: 
     
       1. A processing method comprising:
 measuring a recess portion shape of a first projection and recess pattern formed on a surface of a template; 
 calculating a distribution of the recess portion shape based on a measurement result of the recess portion shape; 
 calculating a distribution of an application amount of a curing agent to a first processing target layer based on the distribution of the recess portion shape; 
 applying the curing agent to the first processing target layer based on the distribution of the application amount of the curing agent to have a distribution of the application amount of the curing agent in a direction of the plane of the first processing target layer; 
 forming a second projection and recess pattern by transferring the first projection and recess pattern onto the curing agent by causing the curing agent to cure in a state where the first projection and recess pattern is in contact with the curing agent; 
 separating the first projection and recess pattern from the cured curing agent; 
 forming a third projection and recess pattern by processing the first processing target layer with the second projection and recess pattern as a mask; and 
 calculating a distribution of an application amount of a curing agent to a second processing target layer based on the distribution of a recess portion shape of the third projection and recess pattern. 
 
     
     
       2. The processing method according to  claim 1 , wherein the recess portion shape includes at least one of a width dimension of a recess portion of the first projection and recess pattern, a sidewall angle of a recess portion of the first projection and recess pattern, and a depth of a recess portion of the first projection and recess pattern. 
     
     
       3. The processing method according to  claim 1 , wherein the curing agent is a photo-curing agent. 
     
     
       4. A processing method used in manufacturing semiconductor devices, the method comprising:
 determining a first distribution amount of a curing agent based on a distribution of one or more first recess portion shapes that are associated with a first pattern;   applying the curing agent to a first processing target layer based on the first distribution amount of the curing agent in a direction of the plane of the first processing target layer;   obtaining a second pattern based on the first pattern;   obtaining a third pattern in the first processing target layer using the second pattern as a mask; and   determining a second distribution amount of a curing agent for a second processing target layer based on a distribution of one or more second recess portion shapes associated with the third pattern.   
     
     
       5. The method according to claim 4, further comprising, before determining the first distribution amount of the curing agent:
 obtaining the one or more first recess portion shapes that are associated with the first pattern, the first pattern being associated with a template; and   determining, based on the one or more first recess portion shapes, the distribution of the one or more first recess portion shapes that are associated with the first pattern.   
     
     
       6. The method according to claim 4, wherein the one or more recess portion shapes associated with the first pattern include at least one of a width dimension of a recess portion, a sidewall angle of the recess portion, and a depth of the recess portion. 
     
     
       7. The method according to claim 4, wherein determining the first distribution amount of a curing agent comprises:
 determining, based on the distribution of the one or more first recess portion shapes that are associated with the first pattern, a droplet amount of the curing agent for each position corresponding to the first processing target layer.   
     
     
       8. The method according to claim 4, wherein determining the first distribution amount of a curing agent is further based on at least one of the type of the curing agent, a shape of the first pattern, a material of the first processing target layer, and one or more etching conditions associated with the first processing target layer. 
     
     
       9. The method according to claim 4, wherein applying the curing agent to the first processing target layer comprises applying the curing agent in one shot based on the first distribution amount of the curing agent. 
     
     
       10. The method according to claim 4, wherein obtaining the second pattern based on the first pattern comprises:
 causing a template associated with the first pattern to contact the curing agent applied to the first processing target layer;   curing the curing agent in a state where the template remains in contact with the curing agent applied to the first processing target layer; and   separating the template from the cured curing agent to form the second pattern.   
     
     
       11. The method according to claim 10, wherein causing the template to contact the curing agent applied to the first processing target layer comprises:
 moving the template associated with the first pattern to contact the curing agent applied to the first processing target layer; and   releasing the template such that the template can continue to move to a position at which capillary action causes the curing agent to enter into the first pattern.   
     
     
       12. The method according to claim 11, wherein the template associated with the first pattern is warped based on the first distribution amount of the curing agent, the warping of the template representing an equilibrium state between the moving of the template and the capillary action. 
     
     
       13. The method according to claim 10, wherein curing the curing agent is based on ultraviolet irradiation via the template. 
     
     
       14. The method according to claim 4, wherein at least one area of the second pattern has a residual layer thickness that is different from the residual layer thickness of other areas of the second pattern. 
     
     
       15. The method according to claim 4, wherein obtaining the third pattern in the first processing target layer using the second pattern as a mask comprises performing at least one of:
 etching the second pattern to eliminate a residual layer of the second pattern in a first area and to reduce the thickness of a residual layer of the second pattern in a second area, wherein the residual layer thickness of the residual layer in the first area is less than the residual layer thickness of the residual layer in the second area;   etching, using the etched second pattern as a mask, the first process target layer to obtain a shape in the first area that and a shape in the second area, wherein the shape in the first area has a lateral dimension that is different from the lateral dimension of the shape in the second area; and   etching the shape in the first area in a lateral direction and the shape in the second area to obtain the third pattern, wherein the third pattern has substantially the same lateral dimensions in the first area and in the second area.   
     
     
       16. The method according to claim 15, wherein the etching is anisotropic etching. 
     
     
       17. The method according to claim 4, wherein the first pattern is associated with a template, the template being a master template or a replica template obtained using a master template. 
     
     
       18. The method according to claim 4, wherein determining the second distribution amount of a curing agent for the second processing target layer comprises:
 obtaining the one or more second recess portion shapes that are associated with the third pattern;   determining, based on the one or more second recess portion shapes, the distribution of the one or more second recess portion shapes that are associated with the third pattern; and   determining the second distribution amount of the curing agent for the second process target layer based on the distribution of the one or more second recess portion shapes.   
     
     
       19. The method according to claim 4, wherein the curing agent is a photo-curing agent. 
     
     
       20. A processing method used in manufacturing semiconductor devices, the method comprising:
 determining a first distribution amount of a curing agent based on a distribution of one or more first recess portion shapes that are associated with a first pattern;   applying the curing agent to a first processing target layer based on the first distribution amount of the curing agent in a direction of the plane of the first processing target layer;   obtaining a second pattern based on the first pattern, wherein at least one area of the second pattern has a residual layer thickness that is different from a residual layer thickness of other areas of the second pattern; and   determining a second distribution amount of a curing agent for a second processing target layer based on one or more shapes associated with at least a part of the second pattern.   
     
     
       21. The method according to claim 20, further comprising, before determining the first distribution amount of a curing agent:
 obtaining the one or more first recess portion shapes that are associated with the first pattern, the first pattern being associated with a template; and   determining, based on the one or more first recess portion shapes, the distribution of the one or more first recess portion shapes that are associated with the first pattern.   
     
     
       22. The method according to claim 20, wherein the one or more recess portion shapes associated with the first pattern include at least one of a width dimension of a recess portion, a sidewall angle of the recess portion, and a depth of the recess portion. 
     
     
       23. The method according to claim 20, wherein obtaining the second pattern based on the first pattern comprises:
 causing a template associated with the first pattern to contact with the curing agent applied to the first processing target layer;   curing the curing agent such that the template remains in contact with the curing agent applied to the first processing target layer; and   separating the template from the cured curing agent to form the second pattern.   
     
     
       24. The method according to claim 23, wherein causing the template to contact the curing agent applied to the first processing target layer comprises:
 moving the template associated with the first pattern to contact the curing agent applied to the first processing target layer; and   releasing the template in a state that the template can continue to move to a position at which capillary action causes the curing agent to enter into the first pattern.   
     
     
       25. The method according to claim 20, further comprising:
 etching the second pattern to eliminate a residual layer of the second pattern in a first area and to reduce the thickness of a residual layer of the second pattern in a second area, wherein the residual layer thickness of the residual layer in the first area is less than the residual layer thickness of the residual layer in the second area;   etching, using the etched second pattern as a mask, the first process target layer to obtain a shape in the first area that and a shape in the second area, wherein the shape in the first area has a lateral dimension that is different from the lateral dimension of the shape in the second area; and   etching the shape in the first area in a lateral direction and the shape in the second area to obtain a third pattern, wherein the third pattern has substantially the same lateral dimensions in the first area and in the second area.   
     
     
       26. The method according to claim 20, wherein determining the first distribution amount of a curing agent comprises:
 determining, based on the distribution of the one or more first recess portion shapes that are associated with the first pattern, a droplet amount of the curing agent for each position corresponding to the first processing target layer.   
     
     
       27. The method according to claim 20, wherein determining the first distribution amount of a curing agent is further based on at least one of the type of the curing agent, a shape of the first pattern, a material of the first processing target layer, and one or more etching conditions associated with the first processing target layer. 
     
     
       28. The method according to claim 20, wherein applying the curing agent to the first processing target layer comprises applying the curing agent in one shot based on the first distribution amount of the curing agent. 
     
     
       29. The method according to claim 20, wherein obtaining the second pattern based on the first pattern comprises:
 causing a template associated with the first pattern to contact the curing agent applied to the first processing target layer;   curing the curing agent in a state where the template remains in contact with the curing agent applied to the first processing target layer; and   separating the template from the cured curing agent to form the second pattern.   
     
     
       30. The method according to claim 24, wherein the template associated with the first pattern is warped based on the first distribution amount of the curing agent, the warping of the template representing an equilibrium state between the moving of the template and the capillary action. 
     
     
       31. The method according to claim 29, wherein curing the curing agent is based on ultraviolet irradiation via the template. 
     
     
       32. The method according to claim 20, wherein at least one area of the second pattern has a residual layer thickness that is different from the residual layer thickness of other areas of the second pattern. 
     
     
       33. The method according to claim 25, wherein the etching is anisotropic etching. 
     
     
       34. The method according to claim 20, wherein the first pattern is associated with a template, the template being a master template or a replica template obtained using a master template. 
     
     
       35. The method according to claim 20, wherein determining the second distribution amount of a curing agent for the second processing target layer comprises:
 obtaining a third pattern in the first processing target layer using the second pattern as a mask;   obtaining one or more second recess portion shapes that are associated with the third pattern;   determining, based on the one or more second recess portion shapes, a distribution of the one or more second recess portion shapes that are associated with the third pattern; and   determining the second distribution amount of the curing agent for the second process target layer based on the distribution of the one or more second recess portion shapes.   
     
     
       36. The method according to claim 20, wherein the curing agent is a photo-curing agent.