USRE50494EActiveUtility

Self-forming embedded diffusion barriers

74
Assignee: TESSERA LLCPriority: Apr 8, 2013Filed: Mar 31, 2022Granted: Jul 15, 2025
Est. expiryApr 8, 2033(~6.8 yrs left)· nominal 20-yr term from priority
Inventors:Cyril Cabral, Jr.Daniel C. EdelsteinJuntao LiTakeshi Nogami
H10W 20/0552H10W 20/4424H10W 20/425H10W 20/076H10W 20/055H10W 20/049H10W 20/047H10W 20/47H10W 20/43H10W 20/042H10W 20/033H10W 20/035H01L 2924/00H01L 2924/0002H01L 23/53295H01L 23/53266H01L 23/53238H01L 23/53233H01L 23/53223H01L 23/528H01L 21/76871H01L 21/76867H01L 21/76858H01L 21/76855H01L 21/76843H01L 21/76831H01L 21/76846
74
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Cited by
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References
56
Claims

Abstract

Interconnect structures containing metal oxide embedded diffusion barriers and methods of forming the same. Interconnect structures may include an M x level including an M x metal in an M x dielectric, an M x+1 level above the M x level including an M x+1 metal in an M x+1 dielectric, an embedded diffusion barrier adjacent to the M x+1 dielectric; and a seed alloy region adjacent to the M x+1 metal separating the M x metal from the M x+1 metal. The embedded diffusion barrier may include a barrier-forming material such as manganese, aluminum, titanium, or some combination thereof. The seed alloy region may include a seed material such as cobalt, ruthenium, or some combination thereof.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method of forming an embedded diffusion barrier, the method comprising:
 providing an interconnect structure comprising an M x  level and an M x+1  level above the M x  level, wherein the M x  level comprises an M x  metal in an M x  dielectric and the M x+1  level comprises a trench in an M x+1  dielectric, wherein the trench in the M x+1  dielectric is in direct contact with a portion of a top surface of the M x  metal;   forming a main liner in the trench directly contacting the M x+1  dielectric and directly contacting the portion of the top surface of the M x  metal in contact with the trench, wherein the main liner comprises a seed material and a barrier-forming material, wherein the seed material comprises cobalt, ruthenium or some combination thereof, and wherein the barrier-forming material comprises manganese, titanium, aluminum or some combination thereof;   substantially filling the trench with an M x+1  metal; and   annealing the M x+1  level to cause the barrier-forming material to migrate into the M x+1  dielectric to form an embedded diffusion barrier, wherein the embedded diffusion barrier is located between the M x+1  dielectric and the main liner, in a region that was previously the M x+1  dielectric.   
     
     
       2. The method of  claim 1 , wherein the main liner comprises one or more layers deposited using atomic layer deposition or chemical vapor deposition, and each of the one or more layers comprises the seed material, the barrier-forming material, or a combination of the seed material and the barrier-forming material. 
     
     
       3. The method of  claim 1 , wherein the seed material consists essentially of cobalt. 
     
     
       4. The method of  claim 1 , wherein the main liner consists of the seed material and the barrier material, wherein the seed material consists essentially of cobalt, ruthenium or some combination thereof, and wherein the barrier-forming material consists essentially of magnesium, titanium, aluminum or some combination thereof. 
     
     
       5. A method of forming an embedded diffusion barrier, the method comprising:
 providing an interconnect structure comprising an Mx level and an Mx+1 level above the Mx level, wherein the Mx level comprises an Mx metal in an Mx dielectric and the Mx+1 level comprises a trench in an Mx+1 dielectric, wherein the trench in the Mx+1 dielectric is in direct contact with a portion of a top surface of the Mx metal; 
 forming a seed material in the trench directly contacting the Mx+1 dielectric and directly contacting the portion of the top surface of the Mx metal in contact with the trench, wherein the seed material consists essentially of cobalt, ruthenium, or some combination thereof; 
 forming a metal liner in the trench above the seed material, wherein the metal liner comprises a barrier-forming material and a conductive interconnect material; 
 forming an Mx+1 metal above the metal liner; and annealing the Mx+1 level, whereby the barrier-forming material migrates from the metal liner, through the seed material, and into the Mx+1 dielectric to form an embedded diffusion barrier comprising a barrier material oxide, wherein the embedded diffusion barrier is located between the Mx+1 dielectric and the main metal liner, in a region that was previously the Mx+1 dielectric. 
 
     
     
       6. The method of  claim 5 , wherein the metal of the metal liner is the same material as the M x+1  metal, and the barrier-forming material comprises manganese, aluminum, titanium, or some combination thereof. 
     
     
       7. The method of  claim 5 , wherein the seed material consists essentially of cobalt. 
     
     
       8. The method of  claim 5 , wherein the seed material consists essentially of ruthenium.  
     
     
       9. The method of  claim 5 , wherein the barrier-forming material consists essentially of manganese.  
     
     
       10. The method of  claim 5 , wherein the embedded diffusion barrier comprises silicon, manganese, and oxygen.  
     
     
       11. The method of  claim 5 , wherein the embedded diffusion barrier comprises silicon, manganese, and oxygen.  
     
     
       12. The method of  claim 5 , wherein the seed material consists essentially of cobalt and ruthenium.  
     
     
       13. The method of  claim 5 , wherein the seed material has a thickness of approximately 2 nm.  
     
     
       14. A method of forming an embedded diffusion barrier, the method comprising:
 providing an interconnect structure comprising an Mx level and an Mx+1 level above the Mx level, wherein the Mx level comprises and Mx metal in an Mx dielectric and the Mx+1 level comprises a trench in an Mx+l dielectric, wherein the trench in the Mx+1 dielectric is in direct contact with a portion of a top surface of the Mx metal;   forming a main liner on a thin liner in the trench directly contacting the Mx+1 dielectric and directly contacting the portion of the top surface of the Mx metal in contact with the trench, wherein the thin liner has a thickness of approximately 2 nm and wherein the main liner comprises a seed material and a barrier-forming material, wherein the seed material comprises cobalt, ruthenium or some combination thereof, wherein the barrier-forming material comprises manganese, titanium, aluminum or some combination thereof, and wherein the thin liner comprises tantalum,   substantially filling the trench with an Mx+1 metal; and   annealing the Mx+1 level to cause the barrier-forming material to migrate into the Mx+1 dielectric to form an embedded diffusion barrier, wherein the embedded diffusion barrier is located between the Mx+1 dielectric and the main liner, in a region that was previously the Mx+1 dielectric.    
     
     
       15. The method of  claim 14 , wherein the main liner comprises one or more layers deposited using atomic layer deposition or chemical vapor deposition, and each of the one or more layers comprises the seed material, the barrier-forming material, or a combination of the seed material and the barrier-forming material.  
     
     
       16. The method of  claim 14 , wherein the seed material consists essentially of cobalt.  
     
     
       17. The method of  claim 14 , wherein the main liner consists of seed material and the barrier material, wherein the seed material consists essentially of cobalt, ruthenium or some combination thereof, and wherein the barrier-forming material consists essentially of manganese, titanium, aluminum or some combination thereof.  
     
     
       18. The method of  claim 14 , wherein the thin liner comprises tantalum.  
     
     
       19. The method of  claim 14 , wherein the thin liner comprises tantalum and nitrogen. 
     
     
       20. The method of  claim 14 , wherein the thin liner comprises titanium. 
     
     
       21. The method of  claim 14 , wherein the thin liner comprises titanium and nitrogen. 
     
     
       22. The method of  claim 14 , wherein the thin liner is deposited using atomic layer deposition or chemical vapor deposition. 
     
     
       23. The method of  claim 22 , wherein the thin liner comprises tantalum and nitrogen. 
     
     
       24. The method of  claim 22 , wherein the thin liner comprises tantalum. 
     
     
       25. The method of  claim 14 , wherein the thin liner comprises tantalum and nitrogen. 
     
     
       26. The method of  claim 14 , wherein the thin liner is deposited using atomic layer deposition or chemical vapor deposition. 
     
     
       27. The method of  claim 26 , wherein the thin liner comprises tantalum and nitrogen. 
     
     
       28. The method of  claim 26 , wherein the thin liner comprises tantalum. 
     
     
       29. The method of  claim 14 , wherein the barrier-forming material consists essentially of manganese. 
     
     
       30. The method of  claim 14 , wherein the embedded diffusion barrier comprises silicon, manganese, and oxygen. 
     
     
       31. The method of  claim 14 , wherein the seed material consists essentially of cobalt and ruthenium. 
     
     
       32. The method of  claim 14 , wherein the seed material has a thickness of approximately 2 nm. 
     
     
       33. A method of forming an embedded diffusion barrier, the method comprising:
 providing an interconnect structure comprising an Mx level and an Mx+1 level above the Mx level, wherein the Mx level comprises an Mx metal in an Mx dielectric and the Mx+1 level comprises a trench in an Mx+1 dielectric, wherein the trench in the Mx+1 dielectric is in direct contact with a portion of a top surface of the Mx metal;   forming a main liner on a thin liner in the trench directly contacting the Mx+1 dielectric and directly contacting the portion of the top surface of the Mx metal in contact with the trench, wherein the thin liner has a thickness less than 10 nm, and wherein the main liner comprises a seed material and a barrier-forming material, wherein the seed material comprises cobalt, ruthenium or some combination thereof, wherein the barrier-forming material comprises manganese, titanium, aluminum or some combination thereof, and wherein the thin liner comprises tantalum,   substantially filling the trench with an Mx+1 metal; and   annealing the Mx+1 level to cause the barrier-forming material to migrate into the Mx+1 dielectric to form an embedded diffusion barrier, wherein the embedded diffusion barrier is located between the Mx+1 dielectric and the main liner, in a region that was previously the Mx+1 dielectric.   
     
     
       34. A method of forming an embedded diffusion barrier, the method comprising:
 providing an interconnect structure comprising an Mx level and an Mx+1 level above the Mx level, wherein the Mx level comprises an Mx metal in an Mx dielectric and the Mx+1 level comprises a trench in an Mx+1 dielectric, wherein the trench in the Mx+1 dielectric is in direct contact with a portion of a top surface of the Mx metal;   forming a seed material on a thin liner in the trench directly contacting the Mx+1 dielectric and directly contacting the portion of the top surface of the Mx metal in contact with the trench, wherein the seed material consists essentially of cobalt, ruthenium, or some combination thereof;   forming a metal liner in the trench above the seed material, wherein the metal liner comprises a barrier-forming material and a conductive interconnect material;   forming an Mx+1 metal above the metal liner; and   annealing the Mx+1 level, whereby the barrier-forming material migrates from the metal liner, through the seed material and the thin liner, and into the Mx+1 dielectric to form an embedded diffusion barrier comprising a barrier material oxide, wherein the embedded diffusion barrier is located between the Mx+1 dielectric and the thin liner, in a region that was previously the Mx+1 dielectric.   
     
     
       35. The method of  claim 34 , wherein the metal of the metal liner is the same material as the Mx+1 metal, and the barrier-forming material comprises manganese, aluminum, titanium, or some combination thereof. 
     
     
       36. The method of  claim 34 , wherein the seed material consists essentially of cobalt. 
     
     
       37. The method of  claim 34 , wherein the seed material consists essentially of ruthenium. 
     
     
       38. The method of  claim 34 , wherein the seed material consists essentially of cobalt, ruthenium or some combination thereof, and wherein the barrier-forming material consists essentially of magnesium, titanium, aluminum or some combination thereof. 
     
     
       39. The method of  claim 34 , wherein the thin liner comprises tantalum. 
     
     
       40. The method of  claim 34 , wherein the thin liner comprises tantalum and nitrogen. 
     
     
       41. The method of  claim 34 , wherein the thin liner comprises titanium. 
     
     
       42. The method of  claim 34 , wherein the thin liner comprises titanium and nitrogen. 
     
     
       43. The method of  claim 34 , wherein the thin liner is deposited using atomic layer deposition or chemical vapor deposition. 
     
     
       44. The method of  claim 43 , wherein the thin liner comprises tantalum and nitrogen. 
     
     
       45. The method of  claim 43 , wherein the thin liner comprises tantalum. 
     
     
       46. The method of  claim 34 , wherein the thin liner has a thickness less than 10 nm. 
     
     
       47. The method of  claim 34 , wherein the thin liner has a thickness of approximately 2 nm. 
     
     
       48. The method of  claim 47 , wherein the thin liner comprises tantalum and nitrogen. 
     
     
       49. The method of  claim 47 , wherein the thin liner comprises tantalum. 
     
     
       50. The method of  claim 47 , wherein the thin liner is deposited using atomic layer deposition or chemical vapor deposition. 
     
     
       51. The method of  claim 50 , wherein the thin liner comprises tantalum and nitrogen. 
     
     
       52. The method of  claim 50 , wherein the thin liner comprises tantalum. 
     
     
       53. The method of  claim 34 , wherein the barrier-forming material consists essentially of manganese. 
     
     
       54. The method of  claim 34 , wherein the embedded diffusion barrier comprises silicon, manganese, and oxygen. 
     
     
       55. The method of  claim 34 , wherein the seed material consists essentially of cobalt and ruthenium. 
     
     
       56. The method of  claim 34 , wherein the seed material has a thickness of approximately 2 nm.

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