Assignee
ZING SEMICONDUCTOR CORP
CN·40 granted patents·53 pending applications·31 citations·filing 2016–2025
Top patents by PatentIndex Score
93 records- 0192US9834861B2Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Dec 5, 2017·3 cites·10 claims
- 0291US9972637B2Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the sameZING SEMICONDUCTOR CORP·Filed 2017·Granted May 15, 2018·5 cites·5 claims
- 0390US12092588B2Method for characterizing defects in silicon crystalZING SEMICONDUCTOR CORP·Filed 2022·Granted Sep 17, 2024·1 cites·8 claims
- 0487US9647067B1FinFET and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted May 9, 2017·5 cites·16 claims
- 0585US12046520B2Method for detecting temperature of thermal chamberZING SEMICONDUCTOR CORP·Filed 2023·Granted Jul 23, 2024·1 cites·7 claims
- 0684US11923254B2Method for detecting temperature of thermal chamberZING SEMICONDUCTOR CORP·Filed 2021·Granted Mar 5, 2024·2 cites·7 claims
- 0784US10100431B2Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Oct 16, 2018·2 cites·9 claims
- 0881US9773891B1FinFET and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Sep 26, 2017·3 cites·18 claims
- 0980US9837517B2Method for making III-V nanowire quantum well transistorZING SEMICONDUCTOR CORP·Filed 2017·Granted Dec 5, 2017·2 cites·8 claims
- 1079US9779999B2Complementary nanowire semiconductor device and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Oct 3, 2017·2 cites·8 claims
- 1179US2026085450A1Crystal growing apparatus and rf-soi substrateZING SEMICONDUCTOR CORP·Filed 2025·Application pending·0 cites
- 1278US9640615B1Method for making III-V nanowire quantum well transistorZING SEMICONDUCTOR CORP·Filed 2016·Granted May 2, 2017·2 cites·11 claims
- 1373US12474277B2Method for determining types of defects in monocrystalline silicon waferZING SEMICONDUCTOR CORP·Filed 2023·Granted Nov 18, 2025·0 cites·10 claims
- 1470US9721846B1Hybrid integration fabrication of nanowire gate-all-around GE PFET and polygonal III-V PFET CMOS deviceZING SEMICONDUCTOR CORP·Filed 2016·Granted Aug 1, 2017·1 cites·5 claims
- 1567US9634133B1Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structureZING SEMICONDUCTOR CORP·Filed 2016·Granted Apr 25, 2017·1 cites·25 claims
- 1667US9634151B1High voltage junctionless field effect device and its method of fabricationZING SEMICONDUCTOR CORP·Filed 2016·Granted Apr 25, 2017·1 cites·15 claims
- 1764US12398485B2Method of detecting crystallographic defects and method of growing an ingotZING SEMICONDUCTOR CORP·Filed 2022·Granted Aug 26, 2025·0 cites·9 claims
- 1864US2024218564A1Crystal growing method, apparatus and rf-soi substrateZING SEMICONDUCTOR CORP·Filed 2023·Application pending·0 cites
- 1963US12334403B2Measuring method of resistivity of a waferZING SEMICONDUCTOR CORP·Filed 2021·Granted Jun 17, 2025·0 cites·8 claims
- 2063US2024218556A1Method, apparatus, system and computer storage medium of controlling crystal growthZING SEMICONDUCTOR CORP·Filed 2023·Application pending·0 cites
- 2163US2024096645A1Soi waferZING SEMICONDUCTOR CORP·Filed 2023·Application pending·0 cites
- 2257US10014210B2SOI substrate and manufacturing method thereofZING SEMICONDUCTOR CORP·Filed 2017·Granted Jul 3, 2018·0 cites·3 claims
- 2356US2025109521A1Method and apparatus for diameter measurement of czochralski monocrystalline silicon, and device for growing czochralski monocrystalline siliconZING SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 2455US12400917B2Method for verification of conductivity type of silicon waferZING SEMICONDUCTOR CORP·Filed 2021·Granted Aug 26, 2025·0 cites·6 claims
- 2555US2023134308A1Soi wafer and method of final processing the sameZING SEMICONDUCTOR CORP·Filed 2022·Application pending·0 cites
- 2655US2024387171A1Structure of high-resistivity silicon-on-insulator embedded with charge capture layer and manufacture thereofZING SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 2754US11624123B2Method and apparatus of monocrystal growthZING SEMICONDUCTOR CORP·Filed 2021·Granted Apr 11, 2023·0 cites·6 claims
- 2854US10553496B2Complementary metal-oxide-semiconductor field-effect transistor and method thereofZING SEMICONDUCTOR CORP·Filed 2017·Granted Feb 4, 2020·0 cites·8 claims
- 2954US9793285B2Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the sameZING SEMICONDUCTOR CORP·Filed 2016·Granted Oct 17, 2017·0 cites·9 claims
- 3054US2024387241A1Structure of high-resistivity silicon-on-insulator embedded with charge capture layer and manufacture thereofZING SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 3154US2023323561A1Method of growing a single-crystal siliconZING SEMICONDUCTOR CORP·Filed 2022·Application pending·0 cites
- 3252US11662326B2Method for calculating liquid-solid interface morphology during growth of ingotZING SEMICONDUCTOR CORP·Filed 2021·Granted May 30, 2023·0 cites·6 claims
- 3352US11479874B2Semiconductor crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Granted Oct 25, 2022·0 cites·8 claims
- 3452US11401626B2Seeding method for crystal growthZING SEMICONDUCTOR CORP·Filed 2021·Granted Aug 2, 2022·0 cites·7 claims
- 3552US9972543B2Complementary nanowire semiconductor device and fabrication method thereofZING SEMICONDUCTOR CORP·Filed 2017·Granted May 15, 2018·0 cites·7 claims
- 3651US2021071313A1Crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 3751US2021071314A1Semiconductor crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 3851US2017271211A1Hybrid integration fabrication of nanowire gate-all-around ge pfet and polygonal iii-v pfet cmos deviceZING SEMICONDUCTOR CORP·Filed 2017·Application pending·0 cites
- 3951US2021071316A1Crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 4050US12000060B2Semiconductor crystal growth method and deviceZING SEMICONDUCTOR CORP·Filed 2020·Granted Jun 4, 2024·0 cites·7 claims
- 4150US9875943B2Complementary metal-oxide-semiconductor field-effect transistor and method thereofZING SEMICONDUCTOR CORP·Filed 2016·Granted Jan 23, 2018·0 cites·12 claims
- 4250US9647107B1Fabrication method for forming vertical transistor on hemispherical or polygonal patterned semiconductor substrateZING SEMICONDUCTOR CORP·Filed 2016·Granted May 9, 2017·0 cites·4 claims
- 4350US2017222049A1Vertical transistor and the fabrication methodZING SEMICONDUCTOR CORP·Filed 2017·Application pending·0 cites
- 4450US2024191393A1Epitaxy susceptor, epitaxy growth apparatus and manufacturing method of semiconductor deviceZING SEMICONDUCTOR CORP·Filed 2023·Application pending·0 cites
- 4549US11393712B2Silicon on insulator structure and method of making the sameZING SEMICONDUCTOR CORP·Filed 2021·Granted Jul 19, 2022·0 cites·10 claims
- 4649US2017222034A1METHOD FOR FORMATION OF VERTICAL CYLINDRICAL GaN QUANTUM WELL TRANSISTORZING SEMICONDUCTOR CORP·Filed 2017·Application pending·0 cites
- 4749US2017256440A1Soi substrate and manufacturing method thereofZING SEMICONDUCTOR CORP·Filed 2016·Application pending·0 cites
- 4849US2021140064A1Semiconductor crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 4949US2021140065A1Semiconductor crystal growth apparatusZING SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 5049US2020149185A1Reflective screen of a monocrystal growth furnace and the monocrystal growth furnaceZING SEMICONDUCTOR CORP·Filed 2019·Application pending·0 cites
Showing the top 50 of 93 patent records by PatentIndex Score.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →