P

Inventor

LANGDO THOMAS A

US41 patents
⚠️ This page may combine multiple inventors who share the name “LANGDO THOMAS A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AMBERWAVE SYSTEMS CORP

14 patents
US7420201B2Sep 2, 2008

Strained-semiconductor-on-insulator device structures with elevated source/drain regions

AMBERWAVE SYSTEMS CORP80 citations99
US7074623B2Jul 11, 2006

Methods of forming strained-semiconductor-on-insulator finFET device structures

AMBERWAVE SYSTEMS CORP226 citations99
US6995430B2Feb 7, 2006

Strained-semiconductor-on-insulator device structures

AMBERWAVE SYSTEMS CORP485 citations99
US7638842B2Dec 29, 2009

Lattice-mismatched semiconductor structures on insulators

AMBERWAVE SYSTEMS CORP81 citations98
US7122449B2Oct 17, 2006

Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

AMBERWAVE SYSTEMS CORP66 citations98
US7109516B2Sep 19, 2006

Strained-semiconductor-on-insulator finFET device structures

AMBERWAVE SYSTEMS CORP100 citations98
US6946371B2Sep 20, 2005

Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

AMBERWAVE SYSTEMS CORP70 citations98
US7588994B2Sep 15, 2009

Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain

AMBERWAVE SYSTEMS CORP17 citations93
US7297612B2Nov 20, 2007

Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes

AMBERWAVE SYSTEMS CORP16 citations93
US7259388B2Aug 21, 2007

Strained-semiconductor-on-insulator device structures

AMBERWAVE SYSTEMS CORP18 citations93
US7041170B2May 9, 2006

Method of producing high quality relaxed silicon germanium layers

AMBERWAVE SYSTEMS CORP14 citations92
US7615829B2Nov 10, 2009

Elevated source and drain elements for strained-channel heterojuntion field-effect transistors

AMBERWAVE SYSTEMS CORP11 citations84
US7439164B2Oct 21, 2008

Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

AMBERWAVE SYSTEMS CORP7 citations74
US7414259B2Aug 19, 2008

Strained germanium-on-insulator device structures

AMBERWAVE SYSTEMS CORP4 citations74

TAIWAN SEMICONDUCTOR MFG

10 patents
US8629477B2Jan 14, 2014

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

TAIWAN SEMICONDUCTOR MFG35 citations98
US9064930B2Jun 23, 2015

Methods for forming semiconductor device structures

TAIWAN SEMICONDUCTOR MFG7 citations93
US8026534B2Sep 27, 2011

III-V semiconductor device structures

TAIWAN SEMICONDUCTOR MFG10 citations93
US7838392B2Nov 23, 2010

Methods for forming III-V semiconductor device structures

TAIWAN SEMICONDUCTOR MFG17 citations93
US8796734B2Aug 5, 2014

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

TAIWAN SEMICONDUCTOR MFG16 citations92
US8519436B2Aug 27, 2013

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

TAIWAN SEMICONDUCTOR MFG17 citations92
US9219112B2Dec 22, 2015

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

TAIWAN SEMICONDUCTOR MFG3 citations74
US8987028B2Mar 24, 2015

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

TAIWAN SEMICONDUCTOR MFG3 citations74
US7955435B2Jun 7, 2011

Method of producing high quality relaxed silicon germanium layers

TAIWAN SEMICONDUCTOR MFG2 citations62
US7674335B2Mar 9, 2010

Method of producing high quality relaxed silicon germanium layers

TAIWAN SEMICONDUCTOR MFG0 citations52

TAIWAN SEMICONDUCTOR MFG CO LTD

5 patents

LOCHTEFELD ANTHONY J

2 patents

RACZ LIVIA M

2 patents

SHANFIELD STANLEY R

2 patents

DRAPER LAB CHARLES S

1 patent

LANGDO THOMAS A

1 patent

CONTOUR SEMICONDUCTOR INC

1 patent

CHARLES STARK DRAPER LABORATORY INC

1 patent

SHEPARD DANIEL R

1 patent

FITZGERALD EUGENE

1 patent